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P3HT:PC61BM
ACTA PHYSICO-CHIMICA SINICA · 2015 ·Vol. 31 ·期 7 ·1413-1420 · IF 0.852

Influence of Electrode Interfacial Buffer Layers on Thermal Stability of P3HT:PC61BM Solar Cells

WU Na,LUO Qun,WU Zhen-Wu,MA Chang-Qi

The high-temperature thermal stability of solution-processed polymer solar cells is a key issue that determines the feasibility of further thermal encapsulation processes, such as thermal lamination or hightemperature atomic layer deposition. In this article, polymer solar cells with poly(3, 4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) or MoO3 as the anode buffer layer (ABL) and ZnO or LiF as the cathode buffer layer (CBL) were fabricated with a device structure of indium tin oxide (ITO)/ABL/poly(3-hexylthiophene): phenyl- C61- butyric acid methyl ester (P3HT:PC61BM)/CBL/Al. Device performances, especially the hightemperature thermal stability of the devices, were studied in detail. The results indicated that the thermal stability of the organic solar cells was highly dependent on the buffer layer material. Devices with MoO3 as ABL and ZnO as CBL showed high thermal stability at a temperature of 120-150 , which ensures the possibility of subsequent thermal processing. In addition, the use of ZnO as the cathode buffer layer could also improve longterm device stability.

研究领域: 材料科学 · 能源科学
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Journal of Physical Chemistry C · 2021 · IF 4.126

Use of Organic Polymer P3HT:PC61BM as the Active Layer to Improve the Performance of ZnO Ultraviolet Photodetector

Siyuan Weng,Man Zhao,Dayong Jiang

One of the most interesting structures of organic photodetectors (OPDs) is the bulk heterojunction (BHJ), which can be achieved by mixing electron donors and electron acceptors in a suitable solvent and then spin-coating. BHJs have proven to be a very useful method to overcome the short diffusion length of organic semiconductor excitons. However, this structure enhances disorder and hinders the collection of photogenerated carriers. Therefore, it is very important to prepare OPDs with this structure. In this paper, we show how to use conjugate polymer donor poly(3-hexylthiophene) (P3HT) and fullerene derivative acceptor 6,6-phenyl C61-butyric acid methyl ester (PC61BM) to form a binary BHJ active layer by spin-coating to improve the performance and detector wavelength of a ZnO ultraviolet (UV) photodetector (PD). Compared with the ZnO UV PD, the responsivity of the OPD can reach 0.58 A W–1, which is increased by about 7.14 times. Furthermore, the OPD shows improved absorption, high photocurrent to dark current ratio (1.63 × 104), and excellent detection capability (3.67 × 1012 Jones). The preparation of a new OPD by this work shows strong performance and provides a new idea for the research of OPD. Therefore, it is very important to design and manufacture ZnO UV PD to form a BHJ OPD with organic polymers P3HT:PC61BM.

研究领域: 材料科学 · 光电探测器研究
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