In the present work, a novel self-powered hybrid ultraviolet (UV) photodetector (PD) based on ZnO @ZnSe nanoarrays/poly(3,4-ethylenedioxyselenophene) (PEDOS) was fabricated and systematically investigated. The designed PD is based on a sandwich configuration and with p-n junction, which is consisting of ZnO as the bottom n- layer, PEDOS as the top of p-layer, and ZnSe as the insertion layer. The results of the study on the performances of UV PD under different conditions optical power density shows that the ZnO@ZnSe/PEDOS exhibits excellent detection of UV light, the device achieves the excellent responsivity (R) 5.44 mA/W and high detectivity (D*) 1.42 × 10 11 Jones under the weaker optical power density (0.32 mW/cm 2 ). The study concludes with a suggestion that the ZnSe layer acts a key role in the superior property of the obtained device, which is introduction of ZnSe layer between the p-PEDOS and n-ZnO layers reduces band migration and thus effectively enhances carrier transport within them, and demonstrating that the responsivity (R) of ZnO@ZnSe/PEDOS is almost 18 times that of the device without the ZnSe layer (0.3 mA/W). On the other hand, as the p- types PEDOS, which enhances the junction quality by reducing the composite center of the carrier, expanding the depletion region and providing a step energy level between the band edges of ZnO and ZnSe, improving the overall collection of photogenerated carriers.
In this study, a high-performance self-powered ultraviolet photodetector (UV PD) is demonstrated, which is fabricated through straightforward hydrothermal and electrochemical deposition techniques. The device features a p–n heterojunction structure composed of ZnO nanorods (NRs) as the n -type bottom layer, poly(3,4-ethylenedioxyselenophene) (PEDOS) as the p -type top layer, and copper oxide (CuO) nanoparticles (NPs) incorporated as a key intermediate layer. Under weak UV irradiation (365 nm, 0.32 mW/cm 2 ), the fabricated UV PD delivers outstanding self-powered performance, attaining a responsivity of 0.185 μA/W and a detectivity of 3.58 × 10⁹ Jones. The CuO NPs insertion layer is verified as the key contributor to device performance enhancement: the UV PD with the CuO NPs interlayer exhibits a responsivity higher than that of the device without the interlayer. This performance boost is attributed to the CuO NPs’ ability to optimize heterojunction quality-specifically; it facilitates carrier generation, transport, and separation while extending carrier lifetime, thus substantially enhancing the responsivity of the CuO NPs/ZnO/PEDOS self-powered UV PD. Additionally, the fabricated self-powered UV PD exhibits excellent multi-cycle stability and robust detection performance under different light intensities. With its high efficiency and low-cost fabrication process, this self-powered UV PD exhibits great potential for practical applications in UV sensing systems.
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