ACS Nano
·
2021
·
IF 15.881
Sisi Liu,Kao Xiong,Kang Wang,Guijie Liang,Ming-Yu Li,Haodong Tang,Xiaokun Yang,Zhen Huang,Linyuan Lian,Manlin Tan,Kai Wang,Liang Gao,Haisheng Song,Daoli Zhang,Jianbo Gao,Xinzheng Lan,Jiang Tang,Jianbing Zhang
Infrared (IR) solar cells are promising devices for significantly improving the power conversion efficiency of common solar cells by harvesting the low-energy IR photons. PbSe quantum dots (QDs) are superior IR photon absorbing materials due to their strong quantum confinement and thus strong interdot electronic coupling. However, the high chemical activity of PbSe QDs leads to etching and poor passivation in ligand exchange, resulting in a high trap-state density and a high open circuit voltage (VOC) deficit. Here we develop a hybrid ligand co-passivation strategy to simultaneously passivate the Pb and Se sites; that is, halide anions passivate the Pb sites and Cd cations passivate the Se sites. The cation and anion hybrid passivation substantially improves the quality of PbSe QD solids, giving rise to an excellent trap-state control and prolonged carrier lifetime. A high VOC and a high short circuit current density (JSC) are achieved simultaneously in the IR QD solar cells based on this hybrid ligand treatment. Finally, a IR-PCE of 1.31% under the 1100-nm-filtered solar illumination is achieved in the PbSe QD solar cells, which is the highest IR-PCE for PbSe QD IR solar cells at present. Additionally, the PbSe QD devices show a high external quantum efficiency of 80% at ∼1295 nm.
研究领域:
材料科学
·
太阳能技术
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Nano Materials
·
2025
·
IF 5.5
Zheng Wen,Fangzhou Yi,Guanlin Ke,Zhenhua Sun
This study investigates near-infrared (IR) phototransistors utilizing hybrid systems of indium gallium zinc oxide (IGZO) and PbSe colloidal quantum dots with distinct surface ligands and diameters. Tetrabutylammonium iodine (TBAI)-modified quantum dot film exhibits an insulative property and abundant traps. Under 1064 nm light illumination, the devices with TBAI-modified quantum dots achieve a high photoresponsivity of 2.63 × 104 A/W, a high detectivity of 1.15 × 1014 Jones, and an exceptional photosensitivity exceeding 107 in transient response. In contrast, the mercaptopropionic acid (MPA)-modified quantum dot film shows higher conductivity and fewer traps, resulting in faster relaxation of photon-induced carriers and a rapid response speed of the devices with MPA-modified quantum dots. Additionally, the device with MPA-modified quantum dots exhibits better air stability compared to the TBAI-modified device. The impact of quantum dot size on device performance was explored, revealing that the device based on larger PbSe quantum dots exhibits superior performance under 1550 nm illumination, with the photoresponsivity and detectivity reaching 4.96 × 105 A/W and 2.88 × 1015 Jones, respectively. This research provides valuable insights and suggests promising applications for IGZO-PbSe quantum dot hybrid systems in the development of high-performance near-IR photodetectors with customizable properties.
研究领域:
材料科学
·
光电探测器
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2021
·
IF 6.024
Ning-Ning Zhou,Ze-Qing Hu,Ramzi Nasser,Ji-Ming Song
High thermoelectric performance and low material cost are essential to the commercialization of thermoelectric modules. Microstructural design, size effects, and rational band engineering are among the keys to high thermoelectric performance, especially for nanocomposites. Here, we demonstrate a facile and versatile bottom-up approach to produce nanocomposites by heat consolidating solution-processed PbSe nanoparticles with a proper amount of Ag. In this PbSe-Ag system, a certain amount of Ag diffuses into the PbSe matrix and partially substituted Pb while other forms Ag2Se at the interphases. This increased the electrical conductivity and inversed the n-type behavior of PbSe to p-type, which is observed from the positive Seebeck coefficient for PbSe-Ag nanocomposites over the temperature range. Nonetheless, the decrease of total lattice thermal conductivity at high temperature is ascribed to the effective phonon at grain boundaries, Ag2Se nanodomain, and point defect. Overall, we obtained an optimized figure of merit, ZT = 0.97 at 723 K for 5 wt % Ag, a significant improvement of 8.8 times than the pure PbSe. Thus, this partially substituting host atom and the presence of a secondary phase provide another potential strategy to enhance the thermoelectric performance of PbSe, promoting its commercialization.
研究领域:
材料科学
·
能源工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Silu Peng,Chaoyi Zhang,Xianchao Liu,Jiayue Han,Chunyu Li,Hongxi Zhou,He Yu,Chao Chen,Jun Gou,Jun Wang
PbSe is one of the most representative materials in lead chalcogenide semiconductors, possessing a narrow bandgap and demonstrating excellent absorption and photoresponse. However, undoped PbSe typically exhibits low carrier concentrations, along with large dielectric constants and thermal expansion coefficients, imposing limitations on its application in a high-performance photodetector. Doping is an effective strategy to overcome the inherent defects and enhance the optical and electrical properties. In this study, different compositions of Pb1−xLaxSe samples were obtained through solid-phase method doping with the rare earth element La. The doped Pb0.7La0.3Se showed superior optical and electrical properties and photoresponse. Additionally, based on the approach of constructing heterojunctions with thin films and two-dimensional (2D) materials, a self-powered p−n heterojunction photodetector, Pb0.7La0.3Se/WSe2, has been successfully fabricated. The device exhibited a continuous and stable light response from 405 to 1550 nm. Moreover, under 0 V bias and 650 nm laser irradiation, the device achieved the responsivity and specific detectivity of 22.85 A/W and 1.81 × 1012 Jones, along with a rapid response/recovery time (162/135 μs), demonstrating excellent photovoltaic effects and outstanding photodetection performance. The construction of heterojunctions with film and 2D materials provides a novel approach to achieving high-performance photodetectors. Simultaneously, the Pb0.7La0.3Se/WSe2 detector shows enormous potential in the field of superior photodetectors with a high on/off ratio, low noise, broadband, rapid response, and miniaturization.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale Advances
·
2025
·
IF 4.6
Yuquan Chen,Perumal Veeramalai Chandrasekar,Chuanbo Li,Sree Pammi,Jagadeesh Babu Bellam,Xiaoming Zhang,Peipei Ma
Broad band photodetectors are found to be the inevitable component both in scientific and industrial field. Here, PbSe colloidal QDs prepared by a simple, inexpensive hot injection method were used to fabricate ultra broadband photodetectors with visible to near-infrared sensing capabilities. The as-fabricated photodetector has a wide spectral response and a stable photoelectric response to lasers with wavelengths ranging from 405 nm to 1550 nm. The photovoltaic detector responsivity is 1.43 mA/W at 405 nm, 4.67 mA/W at 980 nm and 0.2 mA/W at1550 nm. The device with optimized structure provides the maximum Voc of 250 mV under 780 nm light illumination and 100 mV even under 1550 nm illumination. Specifically, the detectivity value reaches up to 4.54×109 Jones at 1550 nm laser illumination with intensity of 0.41 mW/cm2. As a result, the current study's findings serve as the foundation for the creation of a broad band photodetector that can detect light from visible to near infrared spectrum.
研究领域:
材料科学
·
光电工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2022
·Vol. 33
·期 30
·23515-23523
·
IF 2.779
Yao Zhongxiang,Bi Gang,Yin Juxin,Chen Zeyu,Cai Chunfeng
Due to the narrow band gap and high quantum confinement effects, Group IV–VI PbSe semiconductor materials have wide applications in infrared detectors. The morphology and size of nanomaterials affect the physical and chemical properties of PbSe semiconductor materials. Here, we developed a synthesized and grew PbSe-branched, I-shaped, and L-shaped nanorods method with uniform distribution by modulating the reaction environment. The results suggested that the arm length of the nanorods increased along the < 100 > axes with reaction time. The directional attachment of nanoparticles along the {100} plane was enhanced by appropriately increasing the reaction temperature. NH 4 Cl could promote the orientational attachment of PbSe nanocrystals along the {100} planes to form I-shaped and L-shaped nanorods. The PbSe-branched nanorod arms were uniformly distributed between 4.2 and 21 nm corresponding to an absorption spectrum between 1086 and 1574 nm and photoluminescence between 1301 and 1621 nm. This indicates that the optical properties are tunable in the near-infrared. Therefore, this research expands the potential applications of PbSe nanostructures in tunable infrared lasers, bioimaging, and solar cells, among others.
研究领域:
材料科学
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纳米技术
·
光学
✓ 已验证
DOI
高影响因子
CRYSTENGCOMM
·
2012
·Vol. 14
·期 21
·7408-7414
·
IF 3.842
Hao Wei,Shangzhi Chen,Xinglong Ren,Bingjian Qian,Yanjie Su,Zhi Yang,Yafei Zhang
We have reported that the Sn-doped PbSe nanocrystals could be synthesized via a facile solution-based method. Structural and optical characterizations were employed to investigate the properties of the nanocrystals. The x value could be altered across the entire range from 0.58 to 1 by modulating the ratio of cation precursor contents. The band gap energy of the Sn-doped PbSe nanocrystals could be tuned and changed in a nearly linearly way with respect to the x value. Furthermore, using oleylamine as the solvent promoted the nanocrystals to self-assemble as nano-flowers. The theoretical analysis based on first-principles calculations and density of states (DOS) in the VASP code demonstrates the validity of the experimentally obtained band gap variation and values. The band gap energy values at the edge of the solar spectrum render them as competitive candidates for solar applications.
研究领域:
材料科学
·
物理化学
✓ 已验证
产品关联
DOI
高影响因子
Energy & Environmental Science
·
2018
·Vol. 11
·期 7
·1848-1858
·
IF 30.067
Li You,Yefeng Liu,Xin Li,Pengfei Nan,Binghui Ge,Ying Jiang,Pengfei Luo,Shanshan Pan,Yanzhong Pei,Wenqing Zhang,G. Jeffrey Snyder,Jiong Yang,Jiye Zhang,Jun Luo
Here we find the peculiar behavior of Cu ions in the PbSe–Cu system increases its thermoelectric performance. For the electrical transport, a dynamic doping effect is achieved because more Cu ions enter into the PbSe lattice and provide extra charge carriers as the temperature increases, which guarantees an optimized carrier concentration over a wide temperature range. For the thermal transport, the presence of Cu2Se nanoprecipitates and dislocations at a low temperature range as well as the vibration of Cu atoms around the interstitial sites of PbSe at high temperatures result in hierarchical phonon scattering and a significantly reduced lattice thermal conductivity over the whole temperature range. As a result, a peak thermoelectric material figure of merit zT of up to 1.45 and a thermoelectric device figure of merit ZT close to unity are obtained for the sample with 0.375 at% Cu. Furthermore, enhanced thermoelectric properties are also realized for the Cu-intercalated PbS, implying that the temperature-driven dynamic behavior of Cu ions in a rigid lattice can serve as a general strategy to optimize the thermoelectric performance of IV–VI compounds.
研究领域:
材料科学
·
能源科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Optical Materials
·
2023
·
IF 9
Sisi Liu,Meng Wang,Xiong Yu,Hao Li,Haifei Lu,Xiaoyan Wen,Ming-Yu Li,Jianbing Zhang
Infrared (IR) solar cells are potential optoelectronic devices for boosting the power conversion efficiency (PCE) of conventional photovoltaics (such as pervoskite and silicon solar cells) by broadening the utilization range of the sunlight spectrum to short-wavelength infrared region. PbSe colloidal quantum dots (QDs) are one of the optimal candidates for IR solar cells because of their tunable bandgap in the IR region and flexible solution processibility. At present, the best PbSe QD IR photovoltaics generally adopt ZnO as an electron transport layer (ETL). However, the intrinsic drawbacks and surface defects of ZnO can potentially deteriorate the PCE of devices. Herein, Ti 3 C 2 T x , a representative 2D transition carbide, is combined with sol-gel ZnO to develop a new hybrid ETL for fabricating high-performance IR solar cells. This combination effectively suppresses the defects within ZnO by forming new bondings and simultaneously enhances the crystalline of ZnO film. Meanwhile, the introduction of Ti 3 C 2 T x into ZnO film accelerates the transport and collection of photo-generated carriers by constructing a new electron transport pathway. Consequently, compared to the bare devices, the infrared PCE of PbSe QD solar cells increases by 19.5% to 1.04%. These results demonstrate that this hybrid ETL can offer a bright approach for developing high-performance optoelectronic devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Research
·
2020
·
IF 0
Li You,Zhili Li,Quanying Ma,Shiyang He,Qidong Zhang,Feng Wang,Guoqiang Wu,Qingyi Li,Pengfei Luo,Jiye Zhang,Jun Luo
Recent advances in high-throughput (HTP) computational power and machine learning have led to great achievements in exploration of new thermoelectric materials. However, experimental discovery and optimization of thermoelectric materials have long relied on the traditional Edisonian trial and error approach. Herein, we demonstrate that ultrahigh thermoelectric performance in a Cu-doped PbSe-PbS system can be realized by HTP experimental screening and precise property modulation. Combining the HTP experimental technique with transport model analysis, an optimal Se/S ratio showing high thermoelectric performance has been efficiently screened out. Subsequently, based on the screened Se/S ratio, the doping content of Cu has been subtly adjusted to reach the optimum carrier concentration. As a result, an outstanding peak zT~1.6 is achieved at 873 K for a 1.8 at% Cu-doped PbSe0.6S0.4 sample, which is the superior value among the n-type Te-free lead chalcogenides. We anticipate that current work will stimulate large-scale unitization of the HTP experimental technique in the thermoelectric field, which can greatly accelerate the research and development of new high-performance thermoelectric materials.
研究领域:
材料科学
·
热电学
✓ 已验证
DOI
MOLECULES
·
2023
·Vol. 28
·期 6
·2629
·
IF 4.6
Xinru Ma,Xuxia Shai,Yu Ding,Jie Zheng,Jinsong Wang,Jiale Sun,Xiaorui Li,Weitao Chen,Tingting Wei,Weina Ren,Lei Gao,Shukang Deng,Chunhua Zeng
Thermoelectric (TE) technology, which can convert scrap heat into electricity, has attracted considerable attention. However, broader applications of TE are hindered by lacking high-performance thermoelectric materials, which can be effectively progressed by regulating the carrier concentration. In this work, a series of PbSe(NaCl)x(x = 3, 3.5, 4, 4.5) samples were synthesized through the NaCl salt-assisted approach with Na+and Cl−doped into their lattice. Both theoretical and experimental results demonstrate that manipulating the carrier concentration by adjusting the content of NaCl is conducive to upgrading the electrical transport properties of the materials. The carrier concentration elevated from 2.71 × 1019cm−3to 4.16 × 1019cm−3, and the materials demonstrated a maximum power factor of 2.9 × 10−3W m−1K−2. Combined with an ultralow lattice thermal conductivity of 0.7 W m−1K−1, a high thermoelectric figure of merit (ZT) with 1.26 at 690 K was attained in PbSe(NaCl)4.5. This study provides a guideline for chemical doping to improve the thermoelectric properties of PbSe further and promote its applications.Keywords:chemical doping;salt-assisted;NaCl doping;PbSe;thermoelectric material;thermoelectric performance
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry A
·
2020
·Vol. 8
·期 9
·4931-4937
·
IF 11.301
Zhiwei Huang,Dongyang Wang,Caiyun Li,Jinfeng Wang,Guangtao Wang,Li-Dong Zhao
In this work, the thermoelectric performance of p-type PbSe was improved dramatically by enhancing the Seebeck coefficient and reducing electronic thermal conductivity through CdTe alloying. CdTe alloying effectively increased the effective mass of p-type Pb0.98Na0.02Se due to band flattening and promoting the valence band convergence, which contributed to a high Seebeck coefficient of ∼238 μV K−1 at 860 K and large power factor of ∼18.2 μW cm−1 K−2 at 860 K for Pb0.98Na0.02Se + 4% CdTe. Furthermore, CdTe alloying reduced the carrier mobility of Pb0.98Na0.02Se due to the enhanced scattering of impurity atoms, which results in a remarkable reduction of electronic thermal conductivity. As a result, due to its higher power factor and lower thermal conductivity, a high thermoelectric figure of merit ZT ∼1.5 at 860 K was achieved for Pb0.98Na0.02Se + 4% CdTe. This paper provides one novel approach to enhance the thermoelectric performance of p-type PbSe through synergistically manipulating electrical and thermal transport properties.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）