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PbZrO3薄膜
MATERIALS & DESIGN · 2015 · IF 3.501

Optical and dielectric properties of PbZrO3 thin films prepared by a sol–gel process for energy-storage application

T.F. Zhang,X.G. Tang,Q.X. Liu,Y.P. Jiang,L.L. Jiang,L. Luo

PbZrO 3 thin films with (100) and (111) orientation were prepared by a simple sol–gel method. X-ray diffraction results revealed that post-annealing temperatures played an important role on the orientation of PbZrO 3 films. The frequency dependence of dielectric properties and the ferroelectric characteristics were measured. Giant energy-storage density and energy-storage efficiency calculated from hysteresis loops achieved about 25.25   J/cm 3 and 62% for PbZrO 3 film with thickness of 292   nm, respectively, results indicated that PbZrO 3 thin films had a potential application in energy-storage device. Optical properties of PbZrO 3 thin films were analyzed by a spectroscopic ellipsometer, results revealed that (111)-orientated PbZrO 3 thin films exhibited higher refractive index than that of the (100)-orientated PbZrO 3 thin films.

研究领域: 材料科学 · 物理学
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