Light-Science & Applications
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2025
·Vol. 14
·期 1
·1-9
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IF 23.4
Chen Zhong,Man Zhongwei,Rao Shichao,Zhao Jinxing,Wang Shuaibing,Zhang Runtong,Teng Feng,Tang Aiwei
Recently, colloidal quantum dots (QDs) with high luminescent efficiency and tunable colors have become ideal materials for next-generation display devices. Direct photolithography is a powerful tool for patterning QD devices, but it faces the serious issue of degradation in the photophysical properties of the patterned QDs. Here, we use relatively rigid cyclopentane as a bridging group to design the crosslinker CPTA, achieving high-resolution direct photolithography of QDs with nearly nondestructive under ambient conditions. The key to the crosslinker design is the introduction of a rigid bridging group that elevates the LUMO level, providing a stronger energy barrier to prevent QD electrons from being trapped or undergoing non-radiative recombination, thus preserving their PL and EL properties. The efficient and high-resolution RGB line and dot arrays were fabricated with pixel sizes down to 1 μm and a resolution of up to 6350 PPI. The patterned RGB QD films, especially red QDs, maintained their optical and optoelectronic properties, with patterned red QLEDs achieving peak external quantum efficiency (EQE) of 21% and a maximum luminance ( L max ) of ~180,000 cd m⁻², matching pristine devices. These results highlight the importance of photo-crosslinker design for nondestructive QDs patterning, paving the way for advanced display applications in patterned QLED technology.
研究领域:
材料科学
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纳米技术
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光电子学
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光刻技术
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高影响因子
ACS Applied Optical Materials
·
2025
·
IF 3.8
Lei Chen,Hui Jiang,Fanghai Liu,Syed Aamir Hussain,Hossein Chamkouri,Yang Song,Ping Chen,Asad Ali,Xianghua Wang
As an alternative to toxic Cd-based blue light-emitting quantum dots (QDs) and chemically unstable perovskite ones, heavy-metal-free and stable ZnSe QDs have great potential for quantum dot light-emitting diode (QLED) displays. Through overcoming the challenge of controllable synthesis of ZnSe QDs with desirable properties, this work reported the synthesis of super-narrow-band blue-emitting ZnSe/ZnS core/shell QDs with full width at half-maximum (FWHM) of photoluminescence/electroluminescence as narrow as 19/20 nm, peaked at 446/449 nm, respectively. The crystallization of the core/shell QDs was well controlled by systematic optimization on the molar ratios of cations to anions and the amount of precursor addition. The coating shell of ZnS, which has a wider band gap than ZnSe, could effectively suppresses the fluorescence tail in the emission spectrum that is caused by defects on the ZnSe core surface, narrowing the FWHM of the emission spectrum and increasing the fluorescence quantum yield of ZnSe/ZnS core/shell QDs. The prepared QLED using ZnSe/ZnS core/shell QDs exhibits superior color purity, particularly suitable for display applications. This work opens up a new route to synthesizing heavy-metal-free ultra-narrow-band blue-emitting QDs.
研究领域:
纳米技术
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材料科学
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光电子学
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显示技术
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量子点
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高影响因子
Science Bulletin
·
2025
·
IF 21.1
Tianjun Hu,Xiuting Wu,Qingsong Shan,Xingxing Duan,Xiaoyue Cai,Mengjin Huang,Junhui Dai,Hong Zhong,Beichen Yuan,Hengyang Xiang,Linxiang Yang,Qiangyu Dai,Yuhao Zhang,Jiangshan Chen,Haibo Zeng
Developing single-pixel color-tunable electroluminescence technology represents a practical approach to circumvent current limitations in pixel processing and longevity. However, existing single-pixel color-tunable quantum dot light-emitting diodes (QLEDs) devices predominantly employ complex tandem structures. Herein, we demonstrate single-layer color-tunable QLEDs by the real-time interface exciplex modulation with AgInZnS (AIZS) quantum dots (QDs). The dynamically color-tunable QLEDs based on green- and red-emitting AIZS QDs exhibit broad spectral coverage, spanning from green to blue, red to yellow, with standard white emission, respectively. The fabricated devices achieve a leading maximum external quantum efficiency of 5% for quaternary alloy AIZS-based QLEDs. Furthermore, we successfully demonstrate patterned and large-area QLEDs, systematically confirming their significant potential for application in full-color display and lighting technologies.
研究领域:
光电子学
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量子点技术
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显示技术
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发光二极管
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材料科学
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PubMed
高影响因子
Advanced Optical Materials
·
2024
·
IF 8
Mengyuan Chen,Qian Li,Yangyang Bian,Shuaibing Wang,Binbin Hu,Aiwei Tang,Fei Chen,Yanbing Lv,Huaibin Shen
The external quantum efficiencies (EQE) and luminances of red InP-based and blue ZnTeSe-based quantum dot light-emitting diodes (QLEDs) have exceeded 20% and 80 000 cd m −2 , respectively, and the T 50 @100 cd m −2 (time for the luminance decreasing by 50%) operational lifetime of red InP-based QLEDs also have exceeded 1 000 000 h, nearing industrial application standards. However, the low EQE, luminance, and inferior lifetime of green InP-based QLEDs restrict the application for their full-color Cd-free display and lighting applications. The large electron injection barrier and severe exciton quenching caused by defect states of ZnMgO (ZMO) nanoparticles (NPs) lead to lower electron concentration in the emitting layer, which results in reduced radiative recombination. Here, with the surface passivation of MgCl 2 , the exciton quenching sites are significantly suppressed, and the electron injection barrier is reduced owing to the conduction band minimum (CBM) levels upshift of ZMO. As a result, a high EQE of 21.43%, maximum luminance of 25 5985 cd m −2 , along with a long T 50 @1000 cd m −2 (over 4 600 h) and T 50 @100 cd m −2 (over 290 000 h) operational lifetime is achieved for green InP-based QLEDs. These values have all exceeded the previous best values of green InP-based QLEDs.
研究领域:
材料科学
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光电技术
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DOI
高影响因子
Small
·
2025
·
IF 12.1
Yuqin Su,Qunqing Lin,Xinyi Lv,Yan Li,Kun Zhang,Xiuting Wu,Ying Zhou,Yashuang Guo,Maria A. Sandzhieva,Sergey V. Makarov,Hengyang Xiang,Haibo Zeng
Mixed-halide perovskite plays important role in wide-color gamut displays as a vital material for three primary colors. However, halide segregation and caused unstable spectra are the intrinsic problem in mixed-halide perovskite light-emitting diodes (PeLEDs) originating from the lattice strain and the resulting defects in perovskite quantum dots (PQDs). Here, smaller transition metal cations are applied to replace Pb 2+ and release lattice strain, which avoids halogen escaping/halide vacancies forming to ensure high photoluminescence quantum yield (PLQY) and stable spectra. However, the actual doping amount is limited by ionic size and chemical environment, which will affect the improvement of optoelectronic performance. Thus, this study proposes a strategy by introducing tri-n-octylphosphine to coordinate strongly with metal cations and catch them to participate the nucleation-growth process. Through doping transition metal cations effectively, the CsPb(BrI) 3 PQDs show high PLQY (92%) and long lifetime (107.83 ns). Further, highly efficient pure-red PeLEDs with highest external quantum efficiency of 16.86% is fabricated and the spectrum can be stabilized at 630 nm with only 1 nm red-shift under bias, showing the promising potential of PQDs for next-generation display.
研究领域:
材料科学
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光电技术
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高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2021
·
IF 4.094
Ziqi Nie,Lu Huang,Cewei Ren,Xinlin Xiong,Wenqing Zhu,Weiguang Yang,Linjun Wang
The facile approach combined the halide mixture of chloride and bromide anions with the exchange of short-chain ligand Phenethylamine (PEA) was used to prepare hybrid perovskite PEA-MAPbBr 3-x Cl x quantum dots (PEA-QDs-Cl), which realized blue emissive quantum dots light-emitting diode (QLED) with wider gamut of Commission Internationale de l’Eclairage (CIE) coordinates (Δx = −0.04, Δy = 0.03) than National Television Systems Committee (NTSC) TV color standard. Compared to pristine MAPbBr 3 quantum dots (pristine-QDs) prepared by conventional long-chain ligands, the size of PEA-QDs-Cl was manipulated from 9 nm to 3 nm characterized by HRTEM, emissive spectra were blue shifted from 528 nm to 469 nm measured by photoluminescence (PL). Meanwhile, time-resolved PL (TRPL) decay lifetimes of perovskite quantum dots doped with chloride anions (QDs-Cl) were improved from 10.3 ns to 13.9 ns, because short-chain ligands were introduced to passivate defects on the surface of QDs-Cl. Furthermore, XPS results showed that the chloride content was decreased from 34.7% to 33.7% through chloride vacancies on the surface of QDs-Cl were passivated by PEA.
研究领域:
材料科学
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光学工程
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纳米技术
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DOI
高影响因子
Small
·
2023
·Vol. 19
·期 45
·2303247
·
IF 13.3
Yuhe Bi,Sheng Cao,Peng Yu,Zhentao Du,Yunjun Wang,Jinju Zheng,Bingsuo Zou,Jialong Zhao
High color purity blue quantum dot light-emitting diodes (QLEDs) have great potential applications in the field of ultra-high-definition display. However, the realization of eco-friendly pure-blue QLEDs with a narrow emission linewidth for high color purity remains a significant challenge. Herein, a strategy for fabricating high color purity and efficient pure-blue QLEDs based on ZnSeTe/ZnSe/ZnS quantum dots (QDs) is presented. It is found that by finely controlling the internal ZnSe shell thickness of the QDs, the emission linewidth can be narrowed by reducing the exciton-longitudinal optical phonon coupling and trap states in the QDs. Additionally, the regulation of the QD shell thickness can suppress the Förster energy transfer between QDs in the QLED emission layer, which will help to reduce the emission linewidth of the device. As a result, the fabricated pure-blue (452 nm) ZnSeTe QLED with ultra-narrow electroluminescence linewidth (22 nm) exhibit high color purity with the Commission Internationale de l'Eclairage chromatic coordinates of (0.148, 0.042) and considerable external quantum efficiency (18%). This work provides a demonstration of the preparation of pure-blue eco-friendly QLEDs with both high color purity and efficiency, and it is believed that it will accelerate the application process of eco-friendly QLEDs in ultra-high-definition displays.
研究领域:
材料科学
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光电技术
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纳米科技
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PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2026
·
IF 16.8
Junpeng Fan,Zhijun Wu,Quan Nie,Lintao Nie,Fangchang Tan,Chunyan Wu,Ming Deng,Hailing Sun,Guofu Zhou,Lei Qian,Ting Zhang,Chaoyu Xiang
In-situ photo-patterning of ZnO was successfully achieved at room temperature. • QLEDs utilizing photolithographic ZnO as the ETL demonstrated superior performance. • The positive-aging effect was significantly alleviated by using photolithographic ZnO. • ZnO patterns were utilized to construct carrier transport channels in pixelated QLEDs. Benefiting from the adjustable emission spectrum, high color purity, wide gamut, and solution-processability, quantum dot light-emitting diode (QLED) is considered one of the most promising next-generation display technologies. As a prevalent electron transport material, ZnO plays a crucial role in enhancing the efficiency and long-term stability of QLED devices. To promote the development of high-resolution QLED displays, this study proposes a dual-functional surface engineering strategy for achieving in-situ photo-patternable ZnO with enhanced electrical properties. Physicochemical characterization revealed that surface defects of ZnO were significantly reduced via direct photolithography, thereby decreasing non-radiative exciton recombination at the QD/ZnO interface. Particularly, the red QLED devices based on photolithographic ZnO exhibited remarkable performance, achieving a peak external quantum efficiency (EQE) of 23.5%, a brightness of over 140,000 cd m −2 at 5 V, and an alleviated positive-aging effect (i.e., anomalous brightness increase). Concurrently, the operational lifetime T 95 (the time for the device luminance to drop to 95%) was also improved from 1,036 h to 2,084 h. Furthermore, by modulating the morphology of ZnO films, we successfully fabricated pixelated QLED devices, laying the technical foundation for commercializing high-resolution QLED displays. Download: Download high-res image (394KB) Download: Download full-size image
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高影响因子
MATERIALS TECHNOLOGY
·
2020
·
IF 1.738
Ying Li,Fuhuan Ma,Di Zhao,Fei Lu,Jiawei Wang,Sheng Cao,Jun Qian,Yihua Zhou
In recent years, perovskite quantum dots (QDs) have become a new class of semiconductor materials due to their high monodispersity and adjustable emission spectra. However, there are few studies on perovskite QDs ligands, and there are some problems such as poor stability and low photoluminescence quantum yield (PLQY). Here, we prepared CsPbBr3 QDs with excellent optical properties and crystallinity by using caesium stearate as the precursor. Besides, we systematically studied the effects of different chain length organic amines on the yield, optical properties and stability of CsPbBr3 QDs. The experimental results show that the long-chain organic amin oleylamine and dodecylamine (DOAm) have better encapsulation properties, and the synthesised QDs have better crystallinity and stability. CsPbBr3 QDs with PLQY of 90%were obtained by using oleic acid (OA)/DOAm as a ligand at 140°C. Moreover, a high purity monochrome quantum dot light-emitting diode was prepared.
研究领域:
材料科学
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纳米技术
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光电子学
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半导体材料
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量子点
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DOI
高影响因子
Advanced Optical Materials
·
2018
·Vol. 6
·期 14
·1800007
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IF 7.43
Weiwei Chen,Xiaosheng Tang,Peihua Wangyang,Zhiqiang Yao,Dan Zhou,Fenggui Chen,Shiqi Li,Hao Lin,Fanju Zeng,Daofu Wu,Kuan Sun,Meng Li,Yi Huang,Wei Hu,Zhigang Zang,Juan Du
In recent years, metal-halide perovskite quantum dots (QDs) have been broadly applied in optoelectronic fields due to their fascinating characteristics, such as high photoluminescence quantum yields, tunable bandgaps, and low-cost solution processing. Here, a facile ligand-exchange strategy is employed for the fabrication of CsPbBr 3 QDs capped with di-dodecyl dimethyl ammonium bromide. It is demonstrated that the treated QDs' film becomes more compact with higher electron mobility and shorter lifetime. Besides, a reduced conduction band minimum value (0.28 eV) of perovskite QDs' film provides an efficient electron injection to them from ZnO nanoparticles. Through using the well-passivated QDs' film, electroluminescence QD light-emitting diode (QLED) devices with an indium tin oxide/ZnO/CsPbBr 3 QDs/MoO 3 /4, 4′-bis(carbazole-9-yl)biphenyl/Al inverted sandwich structure are achieved. The as-prepared QLED device exhibits a maximum current efficiency of 0.62 cd A −1 and an external quantum efficiency of 0.58%, which is nearly nine times higher than that of the device based on unmodified QDs. More importantly, the stability testing results demonstrate that the QLED can be operated for more than 20 min under ambient conditions without any encapsulation. This provides an alternative route for highly efficient perovskite-based LED with inverted sandwich structures.
研究领域:
材料科学
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光电子学
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高影响因子
Journal of Materials Chemistry C
·
2022
·Vol. 10
·期 15
·5849-5855
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IF 8.067
Qiang Zhang,Minghui Jiang,Guijun Yan,Yaqing Feng,Bao Zhang
All-inorganic CsPbBr3 perovskite quantum dots (CsPbBr3 QDs) have become one of the most promising materials in the field of optoelectronics. However, the poor stability and low photoluminescence quantum yield (PLQY) of CsPbBr3 QDs hinder their further applications. Herein, fluorinated aromatic ammonium bromide (fluorophenethyl ammonium bromide, FPEABr) is introduced in the synthesis of CsPbBr3 QDs. The influence of the fluorination position (ortho, meta, and para) at the benzene ring on the optical properties and stability of CsPbBr3 is systematically evaluated. The results indicate that the short fluorinated aromatic alkyl ammonium chain has been successfully adsorbed onto the surface of CsPbBr3 QDs, and the bromine vacancy defects have been significantly reduced. Eventually, stable CsPbBr3 QDs with a high PLQY (>90%) are achieved with the use of pFPEABr. Furthermore, the short chains of the ligand improved the carrier transport in the CsPbBr3 QD film, and thus the surface treatment increases the maximum luminance of the corresponding perovskite quantum dot light-emitting diodes (QLEDs) from 531 to 1278 cd m−2. The surface ligand engineering strategy involving the FPEABr ligand, in particular pFPEABr, actually provides a new direction for the future development of high-performance QLEDs.
研究领域:
材料科学
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光学
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电子工程
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高影响因子
Advanced Science
·
2022
·Vol. 9
·期 23
·2200450
·
IF 17.521
Xinyu Zhang,Dewang Li,Zhenhu Zhang,Hongli Liu,Shirong Wang
The inadequate hole injection limits the efficiency and lifetime of the blue quantum dot light-emitting diodes (QLEDs), which severely hampers their commercial applications. Here a new discotic molecule of 3,6,10,11-tetrakis(pentyloxy)triphenylene-2,7-diyl bis(2,2-dimethylpropanoate) (T5DP-2,7) is introduced, in which the hole transport channels with superior hole mobility (2.6 × 10 –2 cm 2 V –1 s –1 ) is formed by stacking. The composite hole transport material (HTM) is prepared by blending T5DP-2,7 with the cross-linked 4,4′- bis(3-vinyl-9H-carbazol-9-yl)-1,1′biphenyl (CBP-V) which shows the deep highest occupied molecular orbital energy level. The increased hole mobility of the target composite HTM from 10 –4 to 10 –3 cm 2 V –1 s –1 as well as the stepwise energy levels facilitates the hole transport, which would be beneficial for more balanced carrier injection. This composite hole transport layer (HTL) has improved the deep-blue-emission performances of Commission International de I'Eclairage of (0.14, 0.04), luminance of 44080 cd m −2 , and external quantum efficiency of 18.59%. Furthermore, when L 0 is 100 cd m −2 , the device lifetime T 50 is extended from 139 to 502 h. The state-of-the-art performance shows the successful promotion of the high-efficiency for deep blue QLEDs, and indicates that the optimizing HTL by discotic molecule stacking can serve as an excellent alternative for the development of HTL in the future.
研究领域:
材料科学
·
光电技术
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PubMed
高影响因子
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