Applied Physics Reviews
·
2024
·Vol. 11
·期 3
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IF 11.9
Wang Jindi,Li Mingyang,Fan Wenxuan,Xu Leimeng,Yao Jisong,Wang Shalong,Song Jizhong
Perovskite quantum dot-based light-emitting diodes (QLEDs) have been considered as a promising luminescent technology due to high color purity and wide color gamut. However, the realization of high-performance QLED is still hindered by near-perfect quantum dots (QDs) with efficient and stable exciton recombination behavior. Here, we proposed a ligand compensation (LC) strategy to optimize the QDs by introducing a ligand pair of tri-n-octylphosphine (TOP) and CsBr. The ligand pair could enhance the clarity and colloidal stability of the QD ink, facilitating the fabrication of highly smooth films. On one hand, TOP engages in interactions with Pb and effectively passivates the surface uncoordinated Pb 2+ . On the other hand, the supplement of CsBr provides a Br-rich environment to reduce Br vacancies (V Br ). Through LC, QD films possess a high photoluminescence quantum efficiency of 82% and a shallow hole level, which enables efficient exciton recombination. In addition, the LC makes QD films exhibit stable exciton combination behavior and electrical transport characteristics. Resultantly, the LC-optimized QLEDs show a maximum external quantum efficiency (EQE) of 24.7% and an operational lifetime T 50 of 182 h at an initial luminance of 100 cd m −2 , which is obviously higher than that of the control device (EQE of 15.8%, T 50 of 11 h). The proposed LC strategy for optimizing perovskite QDs presents a novel concept for achieving high-performance QLEDs and holds great potential for widespread application in various optoelectronics.
研究领域:
材料科学
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光电技术
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纳米技术
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2021
·Vol. 32
·期 17
·22024-22034
·
IF 2.478
Li Hong,Jiao Jinxu,Ye Qi,Wu Zhixin,Luo Donglian,Xiong Dehua
Quantum dots (QDs) attract extensive attention because of their excellent optoelectronic performance. However, few research has been done on the synthesis of core–shell QDs by one-step thermal injection. Here the CdSe/ZnS core–shell QDs were successfully synthesized by a one-step thermal injection method. The synthesis process of CdSe/ZnS core–shell QDs was investigated from two aspects of reaction time and oleic acid dosage. The results suggest that the reaction time and the dosage of oleic acid have important effects on the optical properties of CdSe/ZnS core–shell QDs. The action mechanism of oleic acid was also explained in this paper. Moreover, highly efficient green quantum dot light-emitting diodes (QLEDs) were fabricated with CdSe/ZnS core–shell QDs on ITO glass substrate by rotary coating method. The minimum starting voltage of 1.91 V and the maximum brightness of 12,057 cd m −2 were achieved in the QLEDs. This study is of great significance for the development of the synthesis of core–shell QDs by one-step thermal injection and QLEDs.
研究领域:
材料科学
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纳米技术
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光电技术
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半导体物理
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2022
·Vol. 33
·期 35
·26313-26321
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IF 2.779
Wei Song,Luo Xiang,Miao Juhong,Zhang Lei
Cd-based quantum dot light-emitting diodes (QLEDs) have outstanding optical properties, which are promising for a wide range of applications in the fields of lighting and display. However, it is still a research hotspot to prepare high-quality quantum dots (QDs) which can satisfy the requirements of preparing high-performance devices. Here, we develop a facile method to prepare high-quality alloyed CdSeS/CdS/ZnS QDs with a single precursor material, and the as-prepared alloyed QDs have high luminous intensity and narrow size distribution. The alloyed QDs have a uniform and gradient internal structure, there is no abrupt boundary in the final alloyed QDs. This is beneficial to reducing the carrier injection barrier and improving the carrier injection efficiency of electroluminescent devices. The alloyed gradient core/shell QDs-based green QLEDs were fabricated successfully and maximum current efficiency of 33.7 cd/A was obtained. This paper will provide a new strategy to prepare high-performance QLED devices.
研究领域:
材料科学
·
光学工程
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高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Yifei Wang,Yan Li,Yuqin Su,Xinrui Chen,Run Wang,Jiyuan Xu,Gangqiang Zhou,Zhesheng Chen,Hengyang Xiang,Ivan S. Zhidkov,Ernst Kurmaev,Haibo Zeng
Perovskite quantum dots (PeQDs) have great application prospects in fields such as displays and solar cells due to their adjustable band gap, high absorption coefficient, high carrier mobility, and solution processability. However, the ionic crystal characteristic of PeQDs and their surface ligands have led to problems such as solvent sensitivity, poor crystal stability, and difficulty in adjusting the photoelectric properties, which are challenges in high-quality PeQDs. Here, to solve the problem of fluorescence degradation caused by phase change and loss of surface ligands during the purification process of CsPbI3 QDs, this work develops a purification strategy that finely regulates the polarity of the purification solvent, to obtain high-purity perovskite. This strategy can tune the surface ligand concentration and optoelectronic properties while maintaining the crystal stability. The optimized purification process enables the quantum dots to maintain the same level of luminescence performance as the original solution (PLQY is ∼90%). Meanwhile, the electrical properties are improved to significantly increase the exciton recombination rate under an electrical drive. Finally, a highly efficient QLED with an external quantum efficiency of exceeding 23% can be achieved. This scheme for fine purification of CsPbI3 QDs will provide some inspiration for the development of efficient PeQDs and the realization of high-performance optoelectronic devices.
研究领域:
材料科学
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纳米技术
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光电子学
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量子点器件
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显示技术
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DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
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2026
·
IF 12.5
Feixia He,Qingkai Zhang,Kaiyu Yang,Xuwen Chen,Bowen Chen,Hailong Yang,Haolin Luo,Weiguo Chen,Hailong Hu,Fushan Li
The adopted NMAI serves multifunctions: it barricades water/oxygen against ambient degradation, passivates defects to suppress non-radiative recombination, and tunes interfacial energy alignment to balance carrier dynamics. • High luminescence and air stability are simultaneously achieved in perovskite quantum dots via one additive, with PLQY reaching 87.9% and ambient stability over twice the reference. • Ambient-air fabricated NIR-PQLEDs exhibit a peak EQE of 16.15% and T 50 over 140 min, showing over 3-fold EQE and 4-fold operational lifetime relative to control devices. Near-infrared perovskite quantum-dot light-emitting diodes (NIR-PQLEDs) are promising for broad application prospects such as biological imaging and optical communication. However, due to the influence of water and oxygen, the stability of perovskite quantum dots (PQDs) in air environments is usually poor, which hinders their industrial applications. In this work, by introducing multifunctional ligand 1-naphthylmethylammonium iodide (NMAI) for surface modification of PQDs, we successfully realized high-efficiency and stable NIR-PQLEDs fabricated under ambient air conditions. Here, NMAI mainly possesses the following functions: 1) Its hydrophobic aromatic naphthalene group enhances the surface hydrophobicity of PQDs and contributes to a more compact moisture-resistant ligand shell, thereby effectively suppressing water and oxygen erosion under ambient air conditions. 2) The synergistic effect of NMA + cations and I − anions achieves efficient defect passivation, thus suppressing non-radiative recombination. 3) The inherent dipole characteristic of NMAI reconstructs the surface of PQDs, optimizing interfacial energy-level alignment and balancing carrier dynamics. Consequently, the photoluminescence quantum yield (PLQY) of PQD film increases from 74.4% to 87.9%, with remarkably enhanced stability in air environment. Benefiting from this strategy, air-processed NIR-PQLEDs achieve a peak external quantum efficiency (EQE) of 16.15%, representing a more than threefold enhancement compared to the pristine device. Meanwhile, the operational half-lifetime (T 50 ) is extended by more than fourfold to over 140 min. This work provides a novel strategy for air-compatible, low-cost, and scalable fabrication of high-performance NIR-PQLEDs, which is of great significance for advancing their optoelectronic applications in the future.
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Light-Science & Applications
·
2025
·Vol. 14
·期 1
·1-8
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IF 23.4
Jing Yuyu,Yao Mingyu,Yang Min,Li Menglin,Ding He,Yang Gaoling,Zhang Rongjian,Han Dengbao,Liu Huan,Zhong Haizheng
Microdisplay panels are critical components for metaverse technology. Aiming to achieve high-resolution and full-color microdisplay, we report the photolithographic fabrication of color-converted Micro-quantum dot light emitting diodes (QLED) panel by combining blue Micro-QLED electroluminescence (EL) device and red-green quantum dot color converter (QDCC). Pre-patterned templates were firstly photolithographically fabricated and then applied as substrate to fabricate patterned blue Micro-QLED device, achieving an ultra-high pixel resolution up to 6350 pixels per inch (pixel size ranging from 20 μm × 20 μm to 2 μm × 2 μm). Notably, the patterned blue devices achieve a peak external quantum efficiency (EQE) of 7.8% and a maximum brightness of 39,472 cd m −2 . The patterned red devices achieve a peak EQE of 18% and a maximum brightness of 103,022 cd m −2 . By integrating a dual-color red and green QDCC arrays on the top of the blue Micro-QLED, a prototype full-color Micro-QLED panel was fabricated, achieving a resolution up to 1184 pixels per inch with a peak EQE 4.8%, and a maximum brightness of 10 065 cd m −2 . The photolithographic fabrication of color-converted Micro-QLED provides an easy-operated method for achieving cost-effective microdisplay panels.
研究领域:
材料科学
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纳米技术
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光电子学
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显示技术
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半导体器件
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薄膜工艺
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微纳加工
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产品关联
DOI
PubMed
高影响因子
ORGANIC ELECTRONICS
·
2022
·
IF 3.868
Jieyu Bai,Hailong Hu,Yongshen Yu,Yangbin Zhu,Zhongwei Xu,Wenchen Zheng,Haobing Zhao,Kaiyu Yang,Lihua Lin,Tailiang Guo,Fushan Li
InP quantum dots (QDs) are considered to be one of the most promising materials for application in light-emitting devices due to the advantages of heavy-metal-free characteristic and widely tunable spectrum covering most of the visible and near-infrared regions. However, the performance of InP quantum dot light-emitting diodes (QLEDs) lags far behind their Cd-containing counterparts, especially as the InP pixelated device is still in its infancy. In this study, multi-component functional QD inks with excellent stability and printability was developed for inkjet printing InP array QLEDs. High-quality QD films can be obtained, both on flat and bank-containing substrates, by precisely controlling the competition between capillary and Marangoni flows in the printed droplets, enabling high device performance. In addition, a periodic ZnO microlens arrays was prepared by nanoimprinting technology to enhance the light extraction efficiency of inkjet-printed InP QLEDs, leading to 127.6% improvement in external quantum efficiency (EQE) compared to the control device. The maximum luminance, EQE and current efficiency of the obtained device are 17,759 cd/m 2 , 8.1% and 11.1 cd/A, respectively. These results may facilitate the applications of high performance environment-friendly QLEDs by inkjet printing technology.
研究领域:
材料科学
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光电子学
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纳米技术
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产品关联
DOI
高影响因子
Science Advances
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2026
·Vol. 12
·期 8
·
IF 13.9
Tianchen Li,Yuchen Yue,Hui Li,Ning Guo,Fengmian Li,Hanfei Gao,Lei Jiang,Yuchen Wu
AgInGaS (AIGS) quantum dots (QDs) are promising for displays due to their narrow full width at half maximum (FWHM) and tunable emission. However, nonuniform silver vacancy ( V Ag ) distribution causes emission broadening and hinders device performance improvement. Here, we present a multistep temperature control strategy that precisely regulates reaction temperature to control nucleation, cation exchange, and defect reconstruction, thereby enabling uniform V Ag distribution in AIGS QDs. Simultaneously, we construct a dual-layer shell structure (AgGaS 2 /GaS x ), which efficiently passivates surface defects. The synthesized red, green, and blue AIGS QDs achieve photoluminescence quantum yields (92.6, 98.5, and 53.3%) and narrow FWHMs (32, 29, and 21 nm). On the basis of these materials, we fabricated red, green, and blue QD light-emitting diodes that demonstrate external quantum efficiencies of 13.2, 8.0, and 2.9%. Moreover, the interfacial confinement self-assembly strategy enables the fabrication of full-color QD pixel arrays with resolutions up to 2032 pixels per inch, further highlighting the potential of AIGS QDs for near-eye displays.
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PubMed
高影响因子
DISPLAYS
·
2026
·
IF 3.9
Qiwei Li,Yijian Zhou,Xinrui Huang,Caihong Yan,Shuaishuai Wang,Zongjie He,Chang Lin,Yang Li,Kaixin Zhang,Jie Sun,Qun Yan,Tailiang Guo
Micro quantum-dots light-emitting diodes (Micro-QLEDs) is a pivotal evolution in QLEDs displays. Inheriting the advantages of conventional QLEDs, such as wide color gamut, narrow emission bandwidth, and self-emissive properties while achieving ultra-small size. However, current fabrication methods for Micro-QLEDs are limited by complex processing, efficiency degradation, and high manufacturing costs, which hinder their commercialization. In this study, we employ an all inkjet-printing (AIJP) approach to overcome the compatibility limitations of conventional inkjet processes. In particular, A self-emissive red Micro-QLEDs with the structure ITO/PEDOT:PSS/TFB/QD/ZnO/Ag by stacking 5-soluble layers without intermixing. Its size has been scaled down to 30 μm—the smallest light-emitting area QLEDs for AIJP reported to date. The red Micro-QLEDs achieves the maximum external quantum efficiency (EQE) of 7.35% and a current efficiency of 11.19 Cd/A and the highest brightness of 61,377.41 Cd/m 2 . Accurate printing and uniform film formation were realized through systematic ink formulation optimization. The AIJP process offers significant advantages, including simplified fabrication, high material utilization, and independence from photolithography. This work represents a critical step toward the industrial production of full-color Micro-QLEDs displays and demonstrates strong potential for applications.
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高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Haoqi Li,Wenjun Yuan,Kun Zhang,Yifei Wang,Xinrui Chen,Yuqin Su,Xingle Shang,Hengyang Xiang,Haibo Zeng
The carrier injection limitation caused by the surface ligands of quantum dots (QDs) is a major challenge for achieving high-brightness emission in quantum dot light-emitting diodes (QLEDs). In this work, we enhanced the polarity of the antisolvent by incorporating inorganic bromides (ZnBr2) to improve ligand stripping capability, thereby achieving fewer insulating ligands to meet the demand for efficient carrier injection. Simultaneously, the inorganic bromide provided a Br-rich environment, suppressing the generation of Br vacancies under polar conditions, which frequently happened in traditional antisolvent strategies. Benefiting from this polarization-passivation synergistic strategy, ZnBr2-treated QDs exhibited a 17% reduction in ligand quantity and a 40% reduction in defect density, thus the photoluminescence quantum yield (PLQY) of ZnBr2-treated QDs increased from 47% to 86%. The fabricated QLEDs exhibited a 143% increase in current density and a maximum brightness reaching 104,126 cd/m2, which was 4.96 times that of samples treated with pure antisolvent. Correspondingly, the operational lifetime (T50@100 cd/m2) of the device extended from 20 h to 241 h. This simple inorganic bromide polarization-passivation synergistic strategy in QDs' purification engineering provides a new approach for realizing high-brightness QLEDs.
研究领域:
材料科学
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纳米科技
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光电功能材料
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半导体器件
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固态照明
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产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2022
·Vol. 32
·期 32
·2203641
·
IF 19.924
Yunfei Li,Xi Fan,Cai Shen,Xixiu Shi,Pengcheng Li,Kwun Nam Hui,Junpeng Fan,Kai Kang,Ting Zhang,Lei Qian
Colloidal quantum dot light-emitting diodes (QLEDs) simultaneously exhibiting high external quantum efficiency (EQE) and operation stability are achieved via a simple solution processing. A silver bis(trifluoromethane-sulfonyl)imide treatment that is used to chemically dope the poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) hole injection layer (HIL) is proposed. The ionic liquid salt acts as an effective p -dopant for high charge concentrations; and it raises the work functions and surface potentials of the PEDOT:PSS HIL for an interface energy band alignment. Benefiting from a raised hole mobility and a better charge mobility balance, the processing-simple colloidal red QLEDs yielded the highest EQE of up to 17.4%. In particular, a very broad plateau of EQE values over 16.5% in the brightness of 400–10 000 cd m −2 is obtained. Moreover, the packaged QLEDs exhibit an excellent operation stability in ambient air. The T 95 (time for the device brightness to decrease to 95% of its initial brightness) at an initial brightness of 1000 cd m −2 is 4160 h. The work highlights a promising ionic liquid strategy to guide the development of high-performance and cost-effective QLEDs.
研究领域:
材料科学
·
电子工程
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DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2026
·
IF 12.5
Xiaoke Li,Jinjian Lu,Rui Han,Xiaoqing Jing,Yuyu Zhang,Jintao Wang,Ren Sheng,Ping Chen
Dual-site passivation via [VEIm]DCA: DCA − heals Pb 2+ defects, [VEIm] + stabilizes iodides. • Synergy triples PLQY (56%), aligns energy levels, and boosts mobility tenfold. • Deep-red QLEDs: 14.2% EQE at 684 nm and 2.8-fold lifetime gain. • Intramolecular ionic synergy: a new design principle for stable perovskites. Achieving high-efficiency and operationally stable deep-red perovskite quantum dot light-emitting diodes (QLEDs) is crucial for advanced optoelectronics but remains challenging, primarily due to the inherent trade-off between defect passivation and charge transport. Here, we propose a novel dual-site ligand engineering strategy using the ionic liquid 1-vinyl-3-ethylimidazolium dicyanamide ([VEIm]DCA) for CsPbI₃ quantum dots. This approach harnesses the intrinsic synergy within a single molecule: the DCA − anion heals iodine vacancies via coordination to under-coordinated Pb 2+ , while the [VEIm] + cation reinforces the lattice through a C–H···I hydrogen-bonding network. This synergistic action effectively passivates defects (tripling the film PLQY to 56%), optimizes energy level alignment, and enhances charge carrier mobility by over an order of magnitude. Consequently, the resulting deep-red QLEDs achieve a peak external quantum efficiency of 14.2% at 684 nm with a low turn-on voltage of 2.2 V. Notably, operational stability is substantially enhanced, with a T₅₀ lifetime of 64 min at 100 cd m −2 under ambient conditions—a ~ 2.8-fold improvement. This work establishes the synergistic anion-cation pair within a single ionic liquid as a highly efficient and streamlined design principle for harmonizing performance and stability in perovskite optoelectronics.
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高影响因子
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