Enhanced Memristive Performance of Double Perovskite Cs2AgBiBr6-xClx Devices by Chloride Doping
Graphical Lead-free Cs 2 AgBiBr 6- x Cl x ( x =0, 0.2, 0.4, 0.6, 0.8, 1.0) perovskite films were synthesized and characterized. The ITO/Cs 2 AgBiBr 6- x Cl x /Al devices were fabricated to investigate the memristive behaviors. As the chloride content increases, the ON/OFF ratio of the device increases from 10 3 to 10 4 , the average V SET and the V RESET decrease from −0.40 V to −0.21 V and from 1.55 V to 1.34 V, respectively. Resistance states of devices can be maintained after 100 switching cycles and 10 4 s of reading. Mixed halide perovskites are promising memristive materials because of their excellent electronic-ionic properties. In this work, lead-free Cs 2 AgBiBr 6- x Cl x ( x =0, 0.2, 0.4, 0.6, 0.8, 1.0) double perovskite films were fabricated using a one-step solution spin-coating method in air. Moreover, the ITO/Cs 2 AgBiBr 6- x Cl x /Al sandwich-like devices are fabricated to investigate the memristive behaviors. The present memristors exhibit nonvolatile and bipolar resistive switching behaviors without electroforming process. Interestingly, as the chloride content increases, the ON/OFF ratio of the device increases from 10 3 to 10 4 , the average SET voltage and the RESET voltage decrease from −0.40 V to −0.21 V and from 1.55 V to 1.34 V, respectively. In addition, resistance states of devices can be maintained after 100 switching cycles and 10 4 s of reading. This study provides new possibility for the development of low-power and environmentally friendly memristors.
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