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Rashba效应
AIP Advances · 2020 ·Vol. 10 ·期 10 · IF 1.337

Observing dynamic and static Rashba effects in a thin layer of 3D hybrid perovskite nanocrystals using transient absorption spectroscopy

Glinka Yuri D.,Cai Rui,Li Junzi,He Tingchao,Sun Xiao Wei

The dynamic and static Rashba effects in hybrid methylammonium (MA) lead halide perovskites have recently been theoretically predicted. However, only the static effect was experimentally confirmed so far. Here, we report on the dynamic (sub-picosecond/picosecond timescale) and static (nanosecond/microsecond timescale) Rashba effects observed in a fully encapsulated layer with various thicknesses (ranging from ∼40 nm to ∼100 nm) of ∼20-nm-sized 3D MAPbBr 3 nanocrystals (NCs) using transient absorption (TA) spectroscopy. The effect appears as a splitting of the corresponding peaks in TA spectra. We argue that the physical reason for the Rashba effect to be observed is fundamentally determined by configurational entropy loss in NCs possessing a strong spin asymmetry. Specifically, owing to an enhanced flexibility of the NC lattice, a built-in electric field initially induced by an ultrashort (100 fs) pumping pulse through the photo-Dember effect and subsequently developed due to dynamic charge separation throughout NCs is able to initiate the order–disorder transition associated with the MA cation reorientations, the process that efficiently breaks structural inversion symmetry and hence induces the Rashba spin–orbit interaction. The dynamic Rashba effect is found to be strongly dependent on photoexcited carrier density (pumping power), whereas it weakens sharply upon increasing the NC layer thickness up to ∼80 nm due to the NC stacking effect. The integrated intensities of the corresponding spin-split subbands demonstrate a photon-helicity-dependent asymmetry, thus proving the Rashba-type spin-splitting. The magnitudes of the Rashba and Fröhlich polaron effects and the methods of controlling the dynamic Rashba effect are discussed.

研究领域: 材料科学 · 物理学
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NANO LETTERS · 2022 · IF 12.262

Evolution of the Electronic Structure of Ultrathin MnBi2Te4 Films

Runzhe Xu,Yunhe Bai,Jingsong Zhou,Jiaheng Li,Xu Gu,Na Qin,Zhongxu Yin,Xian Du,Qinqin Zhang,Wenxuan Zhao,Yidian Li,Yang Wu,Cui Ding,Lili Wang,Aiji Liang,Zhongkai Liu,Yong Xu,Xiao Feng,Ke He,Yulin Chen,Lexian Yang

Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as the quantum anomalous Hall effect and the axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator type with a large energy gap to one with in-gap topological surface states, which is, however, still in drastic contrast to the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin-film MnBi2Te4 but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi2Te4 thin films.

研究领域: 凝聚态物理 · 材料科学 · 量子物理 · 纳米技术
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