Graphical Lead-free Cs 2 AgBiBr 6- x Cl x ( x =0, 0.2, 0.4, 0.6, 0.8, 1.0) perovskite films were synthesized and characterized. The ITO/Cs 2 AgBiBr 6- x Cl x /Al devices were fabricated to investigate the memristive behaviors. As the chloride content increases, the ON/OFF ratio of the device increases from 10 3 to 10 4 , the average V SET and the V RESET decrease from −0.40 V to −0.21 V and from 1.55 V to 1.34 V, respectively. Resistance states of devices can be maintained after 100 switching cycles and 10 4 s of reading. Mixed halide perovskites are promising memristive materials because of their excellent electronic-ionic properties. In this work, lead-free Cs 2 AgBiBr 6- x Cl x ( x =0, 0.2, 0.4, 0.6, 0.8, 1.0) double perovskite films were fabricated using a one-step solution spin-coating method in air. Moreover, the ITO/Cs 2 AgBiBr 6- x Cl x /Al sandwich-like devices are fabricated to investigate the memristive behaviors. The present memristors exhibit nonvolatile and bipolar resistive switching behaviors without electroforming process. Interestingly, as the chloride content increases, the ON/OFF ratio of the device increases from 10 3 to 10 4 , the average SET voltage and the RESET voltage decrease from −0.40 V to −0.21 V and from 1.55 V to 1.34 V, respectively. In addition, resistance states of devices can be maintained after 100 switching cycles and 10 4 s of reading. This study provides new possibility for the development of low-power and environmentally friendly memristors.
Artificial optoelectronic synapses with both electrical and light-induced synaptic behaviors have recently been studied for applications in neuromorphic computing and artificial vision systems. However, the combination of visual perception and high-performance information processing capabilities still faces challenges. In this work, the authors demonstrate a memristor based on 2D bismuth oxyiodide (BiOI) nanosheets that can exhibit bipolar resistive switching (RS) performance as well as electrical and light-induced synaptic plasticity eminently suitable for low-power optoelectronic synapses. The fabricated memristor exhibits high-performance RS behaviors with a high ON/OFF ratio up to 10 5 , an ultralow SET voltage of ≈0.05 V which is one order of magnitude lower than that of most reported memristors based on 2D materials, and low power consumption. Furthermore, the memristor demonstrates not only electrical voltage-driven long-term potentiation, depression plasticity, and paired-pulse facilitation, but also light-induced short- and long-term plasticity. Moreover, the photonic synapse can be used to simulate the “learning experience” behaviors of human brain. Consequently, not only the memristor based on BiOI nanosheets shows ultra-low SET voltage and low-power consumption, but also the optoelectronic synapse provides new material and strategy to construct low-power retina-like vision sensors with functions of perceiving and processing information.
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