ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 20
·2214771
·
IF 19
Jun Pei,Jian-Lei Shi,Hezhang Li,Yilin Jiang,Jinfeng Dong,Hua-Lu Zhuang,Bowen Cai,Bin Su,Jincheng Yu,Wei Zhou,Bo-Ping Zhang,Jing-Feng Li
GeTe and (Bi,Sb) 2 Te 3 are two representative thermoelectric (TE) materials showing maximum performance at middle and low temperature, respectively. In order to achieve higher performance over the whole temperature range, their segmented one-leg TE modules are designed and fabricated by one-step spark plasma sintering (SPS). To search for contact and connect layers, the diffusion behavior of Fe, Ni, Cu, and Ti metal layers in GeTe is studied systematically. The results show that Ti with a similar linear expansivity (10.80 × 10 −6 K −1 ) to GeTe, has low contact resistance (3 µΩ cm 2 ) and thin diffusion layer (0.4 µm), and thus is an effective metallization layer for GeTe. The geometric structure of the GeTe/(Bi,Sb) 2 Te 3 segmented one-leg TE module and the ratio of GeTe to (Bi,Sb) 2 Te 3 are determined by finite element simulation method. When the GeTe height ratio is 0.66, its theoretical maximum conversion efficiency (η max ) can reach 15.9% without considering the thermal radiation and thermal/electrical contact resistance. The fabricated GeTe/(Bi,Sb) 2 Te 3 segmented one-leg TE module showed a η max up to 9.5% with a power density ≈ 7.45 mW mm −2 , which are relatively high but lower than theoretical predictions, indicating that developing segmented TE modules is an effective approach to enhance TE conversion efficiency.
研究领域:
材料科学
·
热电学
·
能量转换
·
固体物理
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2021
·
IF 13.273
Deyu Bao,Qiang Sun,Linsen Huang,Jie Chen,Jun Tang,Dali Zhou,Min Hong,Lei Yang,Zhi-Gang Chen
Tremendous efforts have been focusing on the improvement of p-type (Bi, Sb) 2 Te 3 -based thermoelectric materials for commercial applications. In this study, we achieve versatile interface engineering through a surface decoration of Bi 0.5 Sb 1.5 Te 3 by amorphous Sb 2 S 3 combining with spark plasma sintering, which introduces semi-coherent Sb/Bi 0.5 Sb 1.5 Te 3 interfaces and dopes S into Bi 0.5 Sb 1.5 Te 3 . Semi-coherent Sb/Bi 0.5 Sb 1.5 Te 3 interfaces strongly scatter phonons and lower energy carriers, leading to decreased thermal conductivity and increased Seebeck coefficient, while the electrical conductivity is not sacrificed due to the compromise of the slightly reduced carrier mobility by interfacial scattering and the increased carrier concentration by S doping. Benefited from the decoupled thermoelectric properties, a significantly enhanced power factor of 3345.40 μW m −1 K −2 and a low thermal conductivity of 0.78 W m −1 K −1 is obtained in Bi 0.5 Sb 1.5 Te 3 -0.4%Sb 2 S 3 , leading to a high peak zT of ∼ 1.31 at 330 K, which shows a 54% enhancement compared with pristine Bi 0.5 Sb 1.5 Te 3 . Moreover, a conversion efficiency of ∼ 7.6% can be predicted in a single leg Bi 0.5 Sb 1.5 Te 3 -0.4%Sb 2 S 3 -based module under a cold side temperature of 300 K and hot side temperature of 480 K. This study paves a facile amorphous Sb 2 S 3 induced interface engineering strategy for the development of high performance (Bi,Sb) 2 Te 3 -based thermoelectric materials.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Hao Zhao,Baoyin Xu,Zhanhui Ding,Yanfeng Xue,Jing Yang,Wei Zhao,Yongfeng Li,Bin Yao,Hongdong Li,Yucheng Lan
Bismuth telluride is a widely used commercial thermoelectric material with excellent thermoelectric performances near room temperature. Reducing thermal conductivity is one of the most effective ways to improve performances of thermoelectric materials. In this study, the thermal conductivity of the material was reduced by fabricating porous structures. Highly dense NaCl-(Bi,Sb) 2 Te 3 composites were fabricated by a high-pressure technology. The NaCl phase was then removed from the composites by ultrasonic washing to produce porous structures. The produced (Bi,Sb) 2 Te 3 porous materials possessed excellent thermoelectric properties. The porosity and pore size of the (Bi,Sb) 2 Te 3 porous materials increased with the increasing NaCl content, decreasing the thermal conductivity significantly. An ultra-low lattice thermal conductivity of 0.21 Wm −1 K −1 at 493 K was achieved when the porosity was 39%, almost the lowest lattice thermal conductivity reported for (Bi,Sb) 2 Te 3 bulk materials. The figure of merit ZT value was enhanced to 1.05 at 493 K when the porosity was 25%. Compared with the most compacted samples ( ZT = 0.79 and porosity of 10%) prepared under the same conditions, the ZT value of the porous samples increased by 33%. This study indicated that porous thermoelectric materials can be prepared simply, quickly and efficiently by high-pressure/ultrasonication washing to improve thermoelectric performances, which has evident reference values for preparing other thermoelectric pore materials with enhancing behaviors.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
Materials
·
2026
·Vol. 19
·期 7
·1345
·
IF 3.7
Lawrence Yongo Methodius Emiliano,Yilin Jiang,Hua-Lu Zhuang,Hezhang Li,Chen Chen,Su-Wei Zhang,Yuzuru Miyazaki,Jing-Feng Li
Thermoelectric (TE) materials offer a promising route for direct thermal-to-electrical energy conversion via the Seebeck effect. Among them, GeTe exhibits superior performance in the mid-temperature range (500–800 K), whereas (Bi,Sb)2Te3is widely regarded as the benchmark material for near low-temperature applications (< 450 K). To improve TE efficiency over a wider temperature range, segmented GeTe/(Bi,Sb)2Te3-based single-leg TE devices were developed. Specifically, based on nanocomposite technology, B4C and SiC nanoparticles were, respectively, introduced into GeTe and (Bi,Sb)2Te3, achieving optimization of electrical conductivity alongside reduction in thermal conductivity, thereby enhancing the thermoelectric figure of merit (ZT). Finite element simulations were used to optimize the geometric structure of the segmented device, determining the ideal ratio of GeTe to (Bi,Sb)2Te3. The simulations predicted a maximum conversion efficiency (ηmax) of 16.9% when the ratio of GeTe to (Bi,Sb)2Te3was 0.24, with a power density of 18.5 mW/mm2. Experimentally, the fabricated segmented device attained a peak conversion efficiency of 7.14% and a power density of 12.5 mW/mm2under a hot-side temperature of 773 K. These findings confirm that strategic segmentation, combined with nanoscale phonon scattering engineering, substantially improves overall TE device performance across broad temperature range, underscoring its potential for high-efficiency thermoelectric energy conversion systems.
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Ruiheng Li,Wenxin Ou,Jianglong Zhu,Qian Deng,Xiaobo Tan,Qi Zhao,Tianbo Lu,Shaojingya Gao,Huangshui Ma,Hao Wu,Qiang Sun,Ran Ang
The emerging fields of the Internet of Things, intelligent robotics, and smart biomedical devices have sparked an increasing demand for high-performance thermoelectric (TE) devices due to their efficient conversion of thermal energy into electrical power, and vice versa. The environmentally friendly (Bi, Sb) 2 Te 3 (BST) system, which displays superior performance near room temperature, offers a promising solution for optimizing thermoelectrics to meet the needs of commercial applications. Here, we utilized AgInSe 2 alloying to enhance the TE and mechanical properties of BST, aiming to optimize electron and phonon transport and elucidate the underlying mechanisms. The synergistic optimization resulted in a peak zT of ∼ 1.3 at 353 K and an average zT ave of ∼ 1.11 from 303 K to 503 K in BST-0.1 %AgInSe 2 , as well as a high Vickers hardness of ∼ 105 H v. Through rational optimization of the TE device, we achieved a maximum conversion efficiency of ∼ 6 % at a temperature difference of 210 K. Leveraging the robust TE output of the device, we further evaluated its potential as a self-powered information interaction wristband device based on ASCII codes. We envisage this versatile TE device being extensively applied in power generation and human–machine interaction, with promising potential in wearable electronics, telecommunications, and healthcare monitoring.
研究领域:
材料科学
·
热电学
·
能量转换
·
可穿戴技术
·
力学性能
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Yang-Wei Wang,Yu Wang,Hao Liang,Yi-Xin Zhang,Jing Feng,Zhen-Hua Ge
Bismuth telluride-based materials has been applied in thermoelectric cooling wildly, but the properties still can be further enhanced by doping, microstructure controlling and compositing strategies. Herein, we demonstrate an anomalous doping strategy in (Bi, Sb) 2 Te 3 (BST) materials, where the strong n type dopant of PbBr 2 acts as p-type dopant, introducing holes in BST materials. The anomalous doping is attributed to the dissolution of Pb and Br elements into the matrix in a non-stoichiometric ratio, with Pb predominantly occupying Sb vacancies and Br enriching the in-situ generated Sb 2 O 3 , resulting in the increased hole concentration and improved electrical conductivity. The maximum power factor (PF) ultimately increases to 3972 μW m −1 K −2 for the 0.3 mol% PbBr 2 doped BST sample. Moreover, the enhanced multi-scale wavelength phonon scattering centers cause the lattice thermal conductivity fall to 0.52 W m −1 K −1 . Finally, the peak ZT is effectively enhanced to 1.3 at 323 K, which is 22 % higher than that of pristine sample. Furthermore, a direct conversion efficiency of 4.6 % is achieved in a single 0.3 mol% PbBr 2 -doped BST leg at a temperature gradient of ΔT = 200 K. Thus, this study underscores the anomalous PbBr 2 doping in Bi 0.42 Sb 1.58 Te 3 , promoting the wider application of BST-based materials.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电转换
·
半导体掺杂
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）