CRYSTENGCOMM
·
2019
·Vol. 22
·期 1
·68-73
·
IF 3.382
Junli Wang,Fan Guan
Antimony selenide (Sb2Se3) is a low-toxic, element-abundant, narrow bandgap (Eg = ∼1.1–1.3 eV) semiconductor that shows potential for UV-Visible-Near-infrared optoelectronic applications. This paper reports the use of potassium selenocyanate (KSeCN) as a novel molecular selenium source to synthesize Sb2Se3 uniform nanorods. The resulting nanorods have been carefully characterized and are found to exhibit decent photoconductivity as well as broad-spectrum optical absorption with an Eg value of ∼1.35 eV. A molecular reaction mechanism is rationally proposed and evidenced for forming Sb2Se3, which is related to the thermal decomposition of selenocyanate (SeCN−) anions through the cleaving of Se–CN bonds to elemental Se(0), followed by its reduction to Se2− anions. Our work using KSeCN offers an alternative method for the synthesis of metal selenides with desirable nanostructures and properties.
研究领域:
材料科学
·
纳米技术
·
半导体物理
✓ 已验证
DOI
高影响因子
Nanoscale
·
2015
·Vol. 8
·期 4
·2277-2283
·
IF 7.394
Shuo Chen,Xvsheng Qiao,Fengxia Wang,Qun Luo,Xianghua Zhang,Xia Wan,Yang Xu,Xianping Fan
An effective colloidal process involving the hot-injection method is developed to synthesize uniform single-crystalline Sb2Se3 nanorods in high yields. The photoconductive characteristics of the as-synthesized Sb2Se3 nanorods are investigated by developing a film-based photodetector and this device displays a remarkable response to visible light with an “ON/OFF” ratio as high as 50 (with an incident light density of 12.05 mW cm−2), short response/recovery times and long-term durability. To overcome the challenge of the intrinsic low electrical conductivity of Sb2Se3, hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure having a type-II band alignment are firstly prepared. The electric current of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film has been significantly increased both in the dark and under light illumination. The responsivity of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film is about 4.2 times as much as that of the photodetector based on the Sb2Se3 nanorod film. This improvement can be considered as an important step to promote Sb2Se3 based semiconductors for applications in high performance photodetectors.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2018
·Vol. 6
·期 41
·11078-11085
·
IF 5.976
Shuo Chen,Khurram Shehzad,Xvsheng Qiao,Xue Luo,Xuemei Liu,Yuting Zhang,Xianghua Zhang,Yang Xu,Xianping Fan
Sb2Se3 is a highly interesting narrow band gap semiconductor with promising applications in new-generation electronic and photoelectronic devices. However, it has intrinsically low electrical conductivity, which limits its broader scope of applications. To overcome this challenge, Sn-doped Sb2Se3 ((SnxSb1−x)2Se3) nanorods with enhanced electrical conductivity are firstly synthesized via a facile hot-injection method. With increasing the doping concentration of Sn4+, the (SnxSb1−x)2Se3 nanorods exhibit several orders of magnitude improvement in electrical conductivity, which originates from the increase of carrier concentration. The photodetector based on the (SnxSb1−x)2Se3 nanorod film shows a higher responsivity (6.21 A W−1) and external quantum efficiency (906%), a lower noise equivalent power (3.14 × 10−13 W Hz−1/2), and a fast response time (0.04 s), surpassing the performance of the Sb2Se3 nanorod film photodetector. In addition, the (SnxSb1−x)2Se3 nanorod film photodetector also displays a broadband spectral response ranging from UV to IR. Those excellent performances unambiguously demonstrate that the (SnxSb1−x)2Se3 nanorods are promising for utilization as highly efficient broadband photodetectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
MATERIALS LETTERS
·
2017
·
IF 2.572
Manjing Wang,Wen Wu,Xuerong Zheng,Xu Hou,Caichi Liu,Qiuyan Hao,Hui Liu
A facile, environment-friendly, low-cost and time-saving hot-injection process using triethylene glycol as solvent was developed to synthesize uniform and pure-phase Sb 2 Se 3 nanorods with single crystalline structure. The crystal structure, morphology and chemical composition of the synthesized Sb 2 Se 3 nanorods were characterized. The synthesized Sb 2 Se 3 nanorods were used to prepare a photodetector and obtain excellent photoresponsive properties with a switching “on/off” ratio of 70 under 658 nm irradiation (15.8 mW/cm 2 ) at a voltage of 3 V. Moreover, the Sb 2 Se 3 -based photodetector displayed a good durability and fast photoresponsive property with response time of 64 ms and decay time of 68 ms. To our best knowledge, the photoresponsive time of the synthesized Sb 2 Se 3 -based photodetector is faster than that of previous reported Sb 2 Se 3 -based photodetector.
研究领域:
材料科学
·
纳米技术
·
光电材料
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2017
·
IF 3.133
Wen Wu,Manjing Wang,Limin Liang,Yufei Yan,Xuerong Zheng,Qiuyan Hao,Hui Liu,Jun Zhang,Caichi Liu
The length effects on photoconductivity have been observed in Sb 2 Se 3 nanorods with uniform diameter grown by a hot-injection polyol process. The phase formation and morphology evolution of Sb 2 Se 3 nanorods were investigated by XRD and TEM analysis. By changing the reaction temperature from 150 °C to 250 °C, the sizes and aspect ratios of Sb 2 Se 3 nanorods can be easily controlled, with an average length ranged from 0.6 μm to 3.2 μm. The length-controlled nanorods were directly used for fabricating prototype photodetectors to explore their length-dependence performances. A significant increase of photoresponse with length elongation has been observed, in which the optimal device displays a remarkable response to simulated solar light with a high switching “on/off” ratio of 320, short response/recovery times (0.15/0.16 s) and long-term durability. This length-dependence property on photodetectors can be considered as an important step to promote the performance of 1D Sb 2 Se 3 nanomaterials .
研究领域:
材料科学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）