PROGRESS IN PHOTOVOLTAICS
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2015
·Vol. 23
·期 12
·1828-1836
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IF 7.584
Xinsheng Liu,Chao Chen,Liang Wang,Jie Zhong,Miao Luo,Jie Chen,Ding-Jiang Xue,Dengbing Li,Ying Zhou,Jiang Tang
Sb 2 Se 3 has attracted great research interest very recently as a promising absorber material for thin film photovoltaics due to its suitable bandgap, high absorption coefficient, and non-toxic, low cost, and earth abundant nature. In this work, a significant efficiency improvement to 4.8% of superstrate cadmium sulfide (CdS)/Sb 2 Se 3 solar cells is obtained by the controlled addition of oxygen during thermal evaporation of Sb 2 Se 3 films. Systematic materials and device physics characterization reveal that oxygen addition during Sb 2 Se 3 film evaporation significantly improves the CdS/Sb 2 Se 3 heterojunction quality through effective passivation of interfacial defect states, resulting in a substantial enhancement in device circuit voltage and short circuit current density. The 4.8% device is the highest efficiency thus far reported for Sb 2 Se 3 thin film solar cells. Copyright © 2015 John Wiley & Sons, Ltd.
研究领域:
材料科学
·
光伏技术
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高影响因子
INORGANIC CHEMISTRY COMMUNICATIONS
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2023
·
IF 3.8
Xiaoqian Jing,Yang Xu,Zizheng He,Dongyun Li,Rui Wang,Minjia Wang
Sb 2 Se 3 is a promising light-absorbing material with low cost and good photocatalytic activity. In this paper, Sb 2 Se 3 thin films doped with zinc (Zn) were deposited on ultra-white glass by hydrothermal method, using ZnCl 2 , sodium selenate and antimony potassium tartrate as raw materials. And the photocatalytic activity was evaluated by photocatalytic decolorization reaction with methylene blue (MB) solution. The results showed that the highest photocatalytic activity was displayed when Zn 2+ was doped with 0.10 mmol, and its degradation rate of methylene blue was 1.66 times higher than that of pure Sb 2 Se 3 . Zn 2+ doped Sb 2 Se 3 film can effectively inhibit the recombination of electron-hole pairs, thereby improving the optical activity. According to the free radical capture experiment, photogenerated holes (h + ) and superoxide radicals (·O 2− ) are the decisive active substances in the photocatalytic process. This method provides a reliable way for transition metal ions doped metal selenides to degrade organic dyes.
研究领域:
材料科学
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环境科学
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DOI
高影响因子
Nano Energy
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2020
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IF 16.602
Guang-Xing Liang,Yan-Di Luo,Shuo Chen,Rong Tang,Zhuang-Hao Zheng,Xue-Jin Li,Xin-Sheng Liu,Yi-Ke Liu,Ying-Fen Li,Xing-Ye Chen,Zheng-Hua Su,Xiang-Hua Zhang,Hong-Li Ma,Ping Fan
Antimony selenide (Sb 2 Se 3 ) is a potential absorber material for environment-friendly and cost-efficient photovoltaics and has achieved considerable progress in recent years. However, the severe open-circuit voltage ( V oc ) deficit ascribed to the interface and/or bulk defect states has become the main obstacle for further efficiency improvement. In this work, Sb 2 Se 3 absorber layer was prepared by an effective combination reaction involving sputtered and selenized Sb precursor thin films . The self-assembled growth of Sb 2 Se 3 thin films with large crystal grains, benign preferential orientation, and accurate chemical composition were successfully fulfilled under an appropriate thickness of Sb precursor and an optimized selenization scenario. Substrate structured Sb 2 Se 3 thin-film solar cells, a champion device with a power-conversion efficiency of 6.84%, were fabricated. This device is comparable to state-of-the-art ones and represents the highest efficiency of sputtered Sb 2 Se 3 solar cells. Importantly, the high V oc of 504 mV is closely related to the reduced deep level defect density for the Sb 2 Se 3 absorber layer, the passivated interfacial defects for Sb 2 Se 3 /CdS heterojunction interface, and the additional heterojunction heat treatment-induced Cd and S inter-diffusion. This significantly improved V oc demonstrates remarkable potential to broaden its scope of applications for Sb 2 Se 3 solar cells.
研究领域:
材料科学
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光伏技术
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物理化学
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DOI
高影响因子
Sustainable Energy & Fuels
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2020
·Vol. 4
·期 8
·3943-3950
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IF 5.503
Hongpeng Zhou,Menglei Feng,Peiyuan Li,Xiangnan Gong,Dingke Zhang,Shijian Chen
Layered Sb2Se3 consists of infinite chains of repeating Sb4Se6 units stacked along the c-axis via Sb–Se covalent bonds, whereas they are linked by van der Waals force along the a-axis and b-axis. It usually tends to grow along the [hk0] orientation with low surface energy. However, [001]-oriented growth, which efficiently enhances charge transport, is often considered unstable due to its high surface energy. Herein, we propose a growth method to fabricate Sb2Se3 thin films with the preferential [001]-orientation on various substrates (Mo, MoSe2, SLG, NiO, SiO2 and FTO). This crystal facet design of preferentially [001]-oriented Sb2Se3 exposes the majority of the nanoribbons vertically aligned to the substrate, and thus maximally improves the charge transport, which may find applications in diverse optoelectronic devices. We confirmed their performance in photoelectrochemical water reduction. The preferentially [001]-oriented Sb2Se3 photocathode exhibited an impressive photocurrent density of −20.5 mA cm−2 at 0 V vs. RHE and a maximum photocurrent density of −28 mA cm−2 at −0.2 V vs. RHE under 1 sun AM 1.5 G illumination. Thus, the successful use of this [001]-Sb2Se3 photocathode paves the way for the development of high-efficiency Sb2Se3-based devices for optoelectronic applications.
研究领域:
材料科学
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半导体物理
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光电化学
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纳米材料
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能源材料
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高影响因子
European Physical Journal Plus
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2022
·Vol. 137
·期 11
·1-10
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IF 3.758
Zhang Zhen,Fu Lijuan,Yao Shun,Cheng Jiang,Li Lu,Tang Hua
Back surface recombination could have some adverse effects on superstrate antimony selenide (Sb 2 Se 3 ) solar cells. Anode interface modification, such as inserting a buffer layer with appropriate energy-level matching, is necessary. Here, a novel interfacial material, pyrolytic ammonium metatungstate (PAMT), prepared by spray pyrolysis deposition, was introduced to modify the back contract of antimony selenide solar cells. Morpho-structural and thermal analysis showed that this material is different from crystalline molybdenum oxide powder. Monology characterization showed that PAMT preferentially fills the space of the Sb 2 Se 3 grain boundary. The J–V test showed that this layer improved the interfacial contract between the absorber and the back electrode. The PAMT layer showed suitable energy matching with Sb 2 Se 3 , providing an effective channel for hole carriers transport from the absorber to the anode, and largely reducing back contact surface recombination. As a result, the PAMT-modified Sb 2 Se 3 device exhibited a much higher photovoltaic performance, significantly improving the efficiency from 5.27% to 6.11%. Graphical Abstract
研究领域:
材料科学
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能源科学
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DOI
高影响因子
Surfaces and Interfaces
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2025
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IF 6.3
Zhihong Xie,Yufang Li,Hang Bai,Wei Wang,Honglie Shen,Long Wang,Andi Chen,Jingzhe Zhang,Jinjie Zheng
Enhancing the electrical properties of Sb 2 Se 3 thin films through elemental doping is a crucial strategy to improve its potential applications in photodetectors. In this study, thin films of Co-doped Sb 2 Se 3 were fabricated through electrochemical deposition. When the doping concentration reached x=0.05, Sb 2 Se 3 thin films were effectively fabricated exhibiting [ hk 1] orientation and a large average grain size. Consequently, the electrical characteristics of the films were improved. Following the incorporation of an Al 2 O 3 barrier layer and CdCl 2 treatment of CdS layer, the photodetector utilizing a thin film of Sb 2 Se 3 with x=0.05 demonstrates a significant response within the visible to near-infrared spectrum under 0 bias conditions. The optimal results were achieved at a wavelength of 635 nm, where the dark current (I dark ) was measured at 5.9 × 10 −7 mA, responsivity (R) at 92 mA/W, detectivity (D*) at 2.11 × 10 12 Jones, and the fitting ideal factor (θ) was determined to be 0.959. The selectivity within the visible wavelength range, coupled with the excellent values of D* and θ, position the device as having significant potential for various applications.
研究领域:
半导体材料
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光电探测
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薄膜制备
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纳米电子学
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固体物理
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DOI
高影响因子
Solar RRL
·
2021
·Vol. 6
·期 4
·2100798
·
IF 8.582
Manjing Wang,Sanlong Wang,Qixing Zhang,Sanjiang Pan,Ying Zhao,Xiaodan Zhang
Finding a cost-effective semiconductor with commercial performance for photoelectrochemical (PEC) water splitting remains challenging. Sb 2 Se 3 , as a low-cost semiconductor, has excellent photo/electric properties for PEC water splitting. Via adjusting the Sb/Se ratio in the precursor ink, the Sb 2 Se 3 with favorable crystallographic orientation can be effectively controlled. The ink with an atomic ratio of Sb/Se = 1:3 induces the growth of a compact Sb 2 Se 3 film with a preferred orientation, resulting in rapid charge transport and high photocurrent. After depositing TiO 2 and Pt in turn, the photocathode with a structure of FTO/Au/Sb 2 Se 3 /TiO 2 /Pt exhibits a photocurrent density of 11.3 mA cm −2 at 0 V RHE . An unassisted solar water splitting device integrating the Sb 2 Se 3 -based photocathode with an inorganic perovskite photovoltaic cell achieves a solar-to-hydrogen efficiency of 2.45%. The efficient Sb 2 Se 3 -based photocathode shows promising potential for solar fuel production.
研究领域:
材料科学
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物理化学
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能源化学
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半导体光电化学
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可再生能源
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DOI
高影响因子