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Deep-trap ultraviolet persistent phosphor for advanced optical storage application in bright environments

Lv Xulong,Liang Yanjie,Zhang Yi,Chen Dongxun,Shan Xihui,Wang Xiao-Jun

Extensive research has been conducted on visible-light and longer-wavelength infrared-light storage phosphors, which are utilized as promising rewritable memory media for optical information storage applications in dark environments. However, storage phosphors emitting in the deep ultraviolet spectral region (200–300 nm) are relatively lacking. Here, we report an appealing deep-trap ultraviolet storage phosphor, ScBO 3 :Bi 3+ , which exhibits an ultra-narrowband light emission centered at 299 nm with a full width at half maximum (FWHM) of 0.21 eV and excellent X-ray energy storage capabilities. When persistently stimulated by longer-wavelength white/NIR light or heated at elevated temperatures, ScBO 3 :Bi 3+ phosphor exhibits intense and long-lasting ultraviolet luminescence due to the interplay between defect levels and external stimulus, while the natural decay in the dark at room temperature is extremely weak after X-ray irradiation. The impact of the spectral distribution and illuminance of ambient light and ambient temperature on ultraviolet light emission has been studied by comprehensive experimental and theoretical investigations, which elucidate that both O vacancy and Sc interstitial serve as deep electron traps for enhanced and prolonged ultraviolet luminescence upon continuous optical or thermal stimulation. Based on the unique spectral features and trap distribution in ScBO 3 :Bi 3+ phosphor, controllable optical information read-out is demonstrated via external light or heat manipulation, highlighting the great potential of ScBO 3 :Bi 3+ phosphor for advanced optical storage application in bright environments.