Journal of Energy Chemistry
·
2024
·
IF 14
Xuejun Xu,Rutao Meng,Yue Liu,Han Xu,Jianpeng Li,Yi Zhang
Solution-processed chalcopyrite solar cells are widely regarded as a promising alternative method in reducing the cost compared with vacuum-based techniques. It is noted that the absorber layer usually needs to be prepared under a high insert pressure (∼1.6 atm) to suppress element loss or under a mild pressure but additional surface etching is needed for fabricating high efficient solar cell. Herein, a copper gradient structured precursor is proposed to prepare CuIn(S,Se) 2 (CISSe) film under a mild pressure (1.1 atm). The designed gradient Cu not only promotes crystal grain growth and tailors the defects, but also avoids the surface etching of the formed CISSe film for the fabrication of high efficient solar cells. Further, Cu gradient design decreases the conduction band offset of heterojunction, boosting the carriers transport across the p-n heterojunction. Accordingly, a 13.35% efficient CISSe solar cell, comparable to the high efficient CISSe solar cell prepared by this method under high pressure or with film surface etching, is fabricated. This work provides a facile pathway to fabricate high efficient solution-processed chalcopyrite solar cell, avoiding high selenization pressure and film etching, and shows huge potential for solution-processed copper-based solar cells.
研究领域:
材料科学
·
可再生能源
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2017
·
IF 4.784
Shoushuai Gao,Yi Zhang,Jianping Ao,Shuping Lin,Zhaojing Zhang,Xiuling Li,Dongxiao Wang,Zhiqiang Zhou,Guozhong Sun,Fangfang Liu,Yun Sun
The direction of Se-Mo-Se sheets to the Mo film is crucial for the thickness of Mo(S,Se) 2 and the electrical conductivity , so as the back contact of Cu 2 ZnSn(S,Se) 4 solar cells. In this study, the preferred orientation of Mo(S,Se) 2 film changes from (100) peak to (103) peak, i.e. from perpendicular to the substrate to tilted to the substrate for Se-Mo-Se sheets as the roughness decrease of Mo back contact layer. The Se vapor can easily diffuse through the channels between Se-Mo-Se sheets when the formed Mo(S,Se) 2 layer is (100) peak preferred with Se-Mo-Se sheets perpendicular to the substrate, and thus excessively thick Mo(S,Se) 2 will be formed. Whereas, the Se-Mo-Se sheets are tilted to substrate when the preferred orientation of Mo(S,Se) 2 is (103) peak. The tilted Se-Mo-Se sheets can act as a natural Se diffusion barrier to suppress the Se vapor diffusion through the already formed Mo(S,Se) 2 layer to further selenize the remaining Mo film, and also can provide a good electrical conductivity. As a result, the thickness of Mo(S,Se) 2 sharply decreased from 1500 nm to 200 nm with the surface morphology change of Mo back contact, which resulting in the decrease of series resistance of Cu 2 ZnSn(S,Se) 4 solar cells from 2.94 Ω cm 2 to 0.49 Ω cm 2 , and the increase of conversion efficiency of Cu 2 ZnSn(S,Se) 4 solar cells from 6.98% to 9.04%.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
NEW JOURNAL OF CHEMISTRY
·
2015
·Vol. 40
·期 2
·1878-1881
·
IF 3.086
Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Yulin Deng,Shi Liu,Gang Wang
CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co) thin films were obtained via a solution process based on homogeneous precursor solutions and selenization. The as-prepared thin films were characterized by XRD, EDS and SEM. The CdS buffer layer was deposited by a solution process on the CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co) thin films, and Mo/CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co)/CdS/i-ZnO/ITO/Al thin-film solar cells were fabricated. The efficiencies of the as-fabricated CuIn0.9R0.1(S,Se)2 (R = Al, Ni, Co) thin-film solar cells were 4.33%, 2.38% and 1.98%, respectively.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2023
·
IF 15.1
Junjie Fu,Afei Zhang,Dongxing Kou,Zewen Xiao,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yafang Qi,Zhi Zheng,Sixin Wu
One important issue limiting the development of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells is the severe recombination loss at CZTSSe/Mo(S,Se) 2 /Mo back contact, primarily arising from the non-matched potential barrier and inferior electric contact between absorber and weak n -type Mo(S,Se) 2 interfacial layer. It is expected that a p-type Mo(S,Se) 2 can effectively improve the hole extraction and enhance the device performance. In this work, we propose a plausible direction to build up an electrically benign back surface field by in-situ doping Mo(S,Se) 2 with group VB elements (TM = V, Nb and Ta). It is turned out that the generated V Mo , Nb Mo , or Ta Mo shallow acceptors could convert Mo(S,Se) 2 from weak n -type to p-type conductivity and increase its work function ( W F ) and hole concentration. With the contact of p-type absorber ( W F,absorber < W F,Mo(S,Se)₂ ), a benign ohmic contact with favorable downward band bending is formed, thereby accelerating the holes extraction and minimizing interface recombination loss. With significant gains in open-circuit voltage ( V oc ) and fill factor (FF), the Mo(S,Se) 2 :Ta device finally increases the efficiency from 10.82 % to 12.72 %. This convenient in-situ Mo(S,Se) 2 doping strategy is different from previous complicated or unstable cases and should serve as a basis for high-quality back contact engineering in kesterite photovoltaics.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Solar RRL
·
2024
·
IF 6
Chenxi Zhao,Bowen Liu,Fuyan Chen,Jiaxin Gao,Xinan Shi,Daocheng Pan
Cu(In, Ga)(S, Se) 2 (CIGSSe) solar cell is one of the most promising thin-film solar cells with a record power conversion efficiency (PCE) of 23.6%. Conventional CIGSSe thin-film solar cells are usually fabricated on Mo-coated soda-lime glass substrate, thereby, the sunlight on the rear side cannot be utilized by the monofacial CIGSSe solar cells owing to the opacity of the Mo electrode. CIGSSe solar cells fabricated on transparent conductive oxide (TCO) electrode enable to fabricate bifacial solar cells, which can generate power on both sides of solar cells, so that bifacial solar cells have a high potential application in building-integrated photovoltaics. However, the PCEs of CIGSSe solar cells fabricated on TCO substrates are significantly lower than those of ones on Mo substrates. In this article, bifacial CIGSSe solar cells on fluorine-doped tin oxide (FTO) substrate are fabricated by using an ionic liquid-assisted solution approach and utilizing a MoO 3 thin film as an interface layer between FTO and CIGSSe absorber layer, yielding a front-side PCE of 9.73% and a back-side PCE of 1.77%.
研究领域:
材料科学
·
光伏技术
·
可再生能源
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2023
·Vol. 52
·期 8
·5422-5429
·
IF 2.1
Xu Jiaxiong,Wu Xiaoshuai
Chalcogenide Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a promising absorber material for photovoltaic applications. When CZTSSe thin film is deposited on an Mo substrate, a Mo(S,Se) 2 layer easily forms between the CZTSSe and the Mo, which is detrimental to the back contact property of the CZTSSe. This work proposes a useful way to inhibit the formation of Mo(S,Se) 2 by sputtering a CuCrO 2 layer on a Mo-foil substrate before the deposition of the CZTSSe. The effects of CuCrO 2 thickness on the crystalline structures, morphologies, and electrical properties of the fabricated samples were studied. The results showed that the insertion of the CuCrO 2 layer prevented the formation of Mo(S,Se) 2 . As the thickness of the CuCrO 2 increased, the thickness of the Mo(S,Se) 2 layer decreased. The Mo(S,Se) 2 layer was absent from the cross-sectional scanning electron microscopy image when the CuCrO 2 thickness exceeded 85 nm. The back contact resistance of CZTSSe decreased monotonously as the CuCrO 2 layer thickened due to the reduction in the Mo(S,Se) 2 layer thickness. Therefore, by inserting a CuCrO 2 layer to separate the CZTSSe and the Mo-foil, the formation of the Mo(S,Se) 2 layer between them was effectively suppressed, and the back contact properties of the CZTSSe thin film were significantly enhanced.
研究领域:
材料科学
·
光伏技术
·
薄膜太阳能电池
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2016
·
IF 3.014
Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Shi Liu,Yulin Deng,Xiaogu Huang,Gang Wang
Hybrid solution process is a powerful liquid deposited strategy merging the advantage of molecular precursor solution and nanocrystals ink. A novel hybrid solution approach is presented to fabricate Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber layer using fully dissolved CIGS precursor solution and the CIGS nanocrystals. Such attractive strategy could significantly improve the single deposited thickness and enhance the quality of as-prepared CIGS film compared with the pure CIGS molecular precursor solution and the CIGS nanocrystals ink. Photovoltaic absorber layers based on CIGSSe chalcopyrite structure show the high-quality microstructural performance and are incorporated into solar cells with power conversion efficiency of 10.19%. The high performance of resulted optoelectronic devices represents a chance to extend the hybrid solution process to other inorganic semiconductor thin film solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 34
·期 8
·2310124
·
IF 19
Xinyu Li,Chengfeng Ma,Naiyun Liu,Chunxu Xiang,Shuxia Wei,Weibo Yan,Wei Huang,Hao Xin
Solution-processed chalcopyrite thin film solar cells have made great progress but still lag behind the vacuum-based ones due to inferior absorber quality and non-ideal interfaces. Here, plasma treatment of the molybdenum (Mo) substrate is reported to modify the back interface and improve the efficiency of solution-processed copper indium sulfoselenide (CuIn(S,Se) 2 , CISSe) solar cells. The results show plasma treatment oxides the surface Mo/MoO 2 to high oxidation oxides MoO 3-x (0 ≤ x < 1). The higher surface polarity greatly improves the wettability of the substrate to the precursor solution and results in formation of more compact and uniform precursor film, which grows to void-free larger grains absorber film with better adhesion to the substrate. In addition, the much higher chemical stability of MoO 3-x than Mo significantly reduces the thickness of high resistive MoSe 2 layer. The improved absorber quality and back interface property decreases charge carrier recombination in the absorber and back contact interface, resulting in 14.53% efficiency solution-processed CISSe solar cell, which is improved by 13% compared to device without plasma treatment.
研究领域:
材料科学
·
可再生能源
·
物理化学
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2017
·Vol. 43
·期 8
·6257-6262
·
IF 2.986
Zhongdong Zhao,Yihan Qi,Qiuying Chen,Xuerong Zheng,Qiuyan Hao,Wen Zhang,Jing Mao,Caichi Liu,Hui Liu
Compared with the expensive and complicated vacuum techniques, the solution-based process to deposit I-III-VI 2 chalcogenide thin films (I=Cu, III=In or Ga, VI=S or Se) has attracted great interests due to its lower cost, higher scalable production and better application in flexible substrate . Herein, a low-toxic and high-active mixture solvent comprised of 1, 2-ethanedithiol and 1,2-ethylenediamine is utilized to dissolve elemental Cu, In and S powders at 60 °C, forming the CuInS 2 (CIS) precursor solution . After spin coating and annealing in a both Ar gas and selenium atmosphere, a dense and large-grained chalcopyrite CuIn(S,Se) 2 (CISSe) thin films with a close-packed grain size of ~800 nm are prepared, eliminating a undesired fine fine-grained bottom layer. In addition, the selenization temperature of the CISSe thin films is also discussed, which influences the phase composition, crystallinity and morphology of CISSe thin films. Photovoltaic device of the CISSe-based thin films is fabricated, obtaining a power conversion efficiency of 6.2% with an active cell area of 0.5 cm 2 under AM 1.5 illumination.
研究领域:
材料科学
·
薄膜制备
·
光伏器件
·
无机功能材料
·
半导体材料
✓ 已验证
DOI
高影响因子
Solar RRL
·
2023
·Vol. 7
·期 17
·2300318
·
IF 7.9
Bowen Liu,Xinan Shi,Wei Shao,Jiaxin Gao,Chenxi Zhao,Fuyan Chen,Dongdong Shen,Bingsuo Zou,Daocheng Pan
Cu(In,Ga)(S,Se) 2 (CIGSSe) solar cells are one of the most promising thin film photovoltaics with a record efficiency of 23.6%. However, the biggest drawback to CIGSSe solar cells is their high material cost, partially resulting from relatively rare and expensive indium and gallium. Therefore, improving the utilization of indium and gallium and reducing their wastage can greatly lower the cost of CIGSSe thin film solar cells. Inkjet printing is a facile, cost-effective, and low-waste deposition technology, which is particularly suitable for low-cost and large-area fabrication of CIGSSe solar cells. Herein, a novel and green ionic liquid-assisted ink to fabricate highly efficient CIGSSe solar cells is developed. The material utilization of inkjet printing can be remarkably improved compared to the conventional vacuum-based deposition approach and spin-coating solution approach. The CIGS printable ink is prepared by dissolving copper acetate, indium acetate, gallium nitrate, and thiourea into ethanol with the assistance of n -butylammonium butyrate ionic liquid. Ionic liquid-assisted CIGS ink has a nearly zero wetting angle and a tunable viscosity, which enable to deposit a flat and continuous CIGS thin film by an inkjet printing method. An encouraging power conversion efficiency of 15.22% has been achieved for inkjet-printed CIGSSe solar cells.
研究领域:
材料科学
·
可再生能源
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Solar RRL
·
2018
·Vol. 2
·期 6
·1800044
·
IF 0
Jingjing Jiang,Shaotang Yu,Yuancai Gong,Weibo Yan,Rui Zhang,Shujuan Liu,Wei Huang,Hao Xin
Fabricating high performing chalcopyrite absorber material from environmental benign solvent is very important for large scale manufacturing production. Here, N, N-dimethylformamide (DMF) is used as a single solvent to make CuIn(S,Se) 2 (CIS) molecular precursor solution and fabricate CIS absorber material. A power conversion efficiency of 10.3% has been achieved from film selenized under 1.6 atmosphere Ar pressure which is 0% for film selenized under 1 atmosphere pressure. Characterizations using XRD, SEM, TEM, EDX reveal a Cu-rich absorber material consisting of loosely connected grains with vertical holes in film selenized under 1 atmosphere and a Cu-poor compact large-grain top layer with large hole bottom layer in film selenized under high Ar pressure. Further optimization of precursor formulation and device fabrication conditions to address the non-perfect double layer structure is expected to further improve DMF solution processed CIS solar cell efficiency. Our results demonstrate annealing precursor film under increased atmosphere pressure is a new and promising strategy to fabricate high performing thin film solar cells, which can be applied to all solution processed chalcogenide solar cells including CIS, CIGS and CZTS.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
Journal of Materials Chemistry A
·
2016
·Vol. 4
·期 35
·13476-13481
·
IF 8.262
Dandan Zhao,Qingmiao Fan,Qingwen Tian,Zhengji Zhou,Yuena Meng,Dongxing Kou,Wenhui Zhou,Sixin Wu
A non-hydrazine solution process has been considered as a promising way for the deposition of Cu(In,Ga)(S,Se)2(CIGSSe) thin films. However, from our previous work, the presence of a fine-grained layer in the absorber layer was shown to be an obstacle to further improve the solar cell efficiency. Here, an improved fabrication route is proposed to solve this problem. A mixture of Cu2S, In2Se3, Ga and Se was simultaneously dissolved in 1,2-ethanedithiol and 1,2-ethylenediamine, forming a homogeneous precursor solution to deposit CIGSSe nanocrystal films. By optimizing the selenization method by using rapid thermal processing (RTP) combined with an improved graphite box, large grains throughout the whole absorber layer were successfully obtained. Based on such a high-quality CIGSSe absorber layer, an encouraging power conversion efficiency of 11.8% has been achieved with a Jsc of 28.25 mA cm−2, a Voc of 596 mV and a FF of 69.79% and without an antireflection coating.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）