Nanomaterials
·
2022
·Vol. 12
·期 22
·3994
·
IF 5.719
Zhanwu Wang,Yingrui Sui,Meiling Ma,Tianyue Wang
Cu2ZnSn(S,Se)4(CZTSSe) films are considered to be promising materials in the advancement of thin-film solar cells. In such films, the amounts of S and Se control the bandgap. Therefore, it is crucial to control the concentration of S/Se to improve efficiency. In this study, Cu2MnxZn1−xSnS4(CMZTS) films were fabricated using the sol-gel method and treated in a Se environment. The films were post-annealed in a Se atmosphere at various temperature ranges from 300 °C to 550 °C at intervals of 200 °C for 15 min to obtain Cu2MnxZn1−xSn(S,Se)4(CMZTSSe). The elemental properties, surface morphology, and electro-optical properties of the CMZTSSe films were investigated in detail. The bandgap of the CMZTSSe films was adjustable in the scope of 1.11–1.22 eV. The structural propeties and phase purity of the CMZTSSe films were analyzed by X-ray diffraction and Raman analysis. High-quality CMZTSSe films with large grains could be acquired by suitably changing the selenization temperature. Under the optimized selenization conditions, the efficiency of the fabricated CMZTSSe device reached 3.08%.Keywords:Cu2ZnSn(S,Se)4film;Mn-doping;solar cells;properties;selenization temperature
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SUPERLATTICES AND MICROSTRUCTURES
·
2019
·
IF 2.385
Yong Cui,Junye Tong,Hongmei Shao,Gang Wang,Daocheng Pan
Novel semiconductor Cu 2 BaSn(S,Se) 4 thin film with orthorhombic structure has been successfully fabricated via solution process. XRD、EDS、XPS and SEM were used to investigate the structure、elemental composition、valence states and morphology of the Cu 2 BaSn(S,Se) 4 thin film . Different selenization temperatures that affected CBTSSe thin film quality were investigated. The photoresponse property of Cu 2 BaSn(S,Se) 4 thin film indicated that it had potential application in low-cost thin film solar cells. The solution process to fabricate Cu 2 BaSn(S,Se) 4 /CdS heterojunction thin film solar cells demonstrated that Cu 2 BaSn(S,Se) 4 thin film could be applied as absorb layer in the thin film solar cells.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2014
·
IF 5.9
Wangen Zhao,Gang Wang,Qingwen Tian,Yanchun Yang,Lijian Huang,Daocheng Pan
Cu2ZnSn(S,Se)4 semiconductor is a promising absorber layer material in thin film solar cells due to its own virtues. In this work, high quality Cu2ZnSn(S,Se)4 thin films have been successfully fabricated by an ethanol-based sol–gel approach. Different from those conventional sol–gel approaches, SnS2 was used as the tin source to replace the most commonly used SnCl2 in order to avoid the possible chlorine contamination. In addition, sodium was found to improve the short-circuit current and fill factor rather than the open-circuit voltage due to the decrease of the thickness of small-grained layer. The selenized Cu2ZnSn(S,Se)4 thin films showed large densely packed grains and smooth surface morphology, and a power conversion efficiency of 6.52% has been realized for Cu2ZnSn(S,Se)4 thin film solar cell without antireflective coating.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2021
·
IF 7.267
Xiaowei Zhou,Chao Gao,Hao Luo,Zhiwei Liu,Haixu Liu,Haifeng Gao,Qing Zhou,Wenbo Li,Xiaoyun Teng,Wei Yu
In this paper, we reported a modified preparation process for Cu 2 ZnSn(S,Se) 4 (CZTSSe) films. For this process, Al 2 O 3 capping layers were deposited on precursor films before selenization. It was found the capping layer can prevent the formation of separate Cu x Se phase on top of the film and facilitate a homogeneous growth of the crystalline grains during selenization. Detailed characterizations revealed the reason: the Al 2 O 3 capping layers can inhibit the incorporation of Se into the film in low-temperature region (below 350 °C). So the reaction between Se and Cu, which is thermodynamically preferential in this temperature region, can be prevented. As the disappearance of Cu x Se, the traditional top-to-down crystallization mode was substituted by a homogeneous crystallization mode. Therefore, CZTSSe films with homogeneous crystallization properties were achieved. By using the capping layers, the efficiencies of the solar cells were improved. In particular, the open-circuit voltage (V OC ) of the solar cell increased by ~18% by using the capping layers.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
Materials Today Communications
·
2019
·
IF 1.859
Xunan Shen,Chao Zhang,Yang Feng,Wei Li,Guifeng Chen,Chengchun Tang
In this work, Cu 2 ZnSn(S,Se) 4 thin films were prepared by sol-gel methods based on dimethyl sulfoxide solutions with H 3 BO 3 additive. The morphological, structural, compositional and photovoltaic properties of the Cu 2 ZnSn(S,Se) 4 thin films were investigated. We found that the formation of voids, cracks and fine-grain layers were suppressed effectively with slight H 3 BO 3 . Based on the decrease of these micro defects, the series resistance decreased and shunt resistance increased largely. And the band gap of CZTSSe solar cells broaden from 1.031 eV to 1.064 eV. The best solar cell showed an open-circuit voltage of 440.1 mV, short-circuit current density of 28.15 mA/cm 2 , fill factor of 58.81% and power conversion efficiency of 7.27% under air mass 1.5 (100 mW/cm 2 ) illumination.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）