JOURNAL OF PHYSICS D-APPLIED PHYSICS
·
2023
·Vol. 56
·期 49
·495103
·
IF 3.4
Yujiao Ma,Yuzhou Sun,Zihan Zhang,Haokai Zhao,Haifeng Gao,Qing Zhou,Wenbo Li,Xiaoyun Teng,Chao Gao,Wei Yu
In this paper, the open-circuit voltages (VOC) of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells were improved by soaking the CZTSSe films in Cd/NH3 solutions before the deposition of buffer layers. The effects of Cd/NH3 soaking on the properties of CZTSSe films and solar cells were investigated in depth. We found Cd/NH3 soaking can promote downward band bending of the CZTSSe layer at the surface region. In addition, the Cd/NH3 soaking can eliminate the deep level acceptor in CZTSSe and decrease the density of the defects at the absorber/buffer interface. These effects can significantly reduce the carrier recombination in the depletion region of CZTSSe solar cells. As a result, the VOC of CZTSSe solar cells were increased from ∼460 mV to ∼480 mV, the efficiency of the best CZTSSe solar cell was increased from 10.2% to 11.6% by the Cd/NH3 soaking process.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2021
·
IF 7.267
Xiaowei Zhou,Chao Gao,Hao Luo,Zhiwei Liu,Haixu Liu,Haifeng Gao,Qing Zhou,Wenbo Li,Xiaoyun Teng,Wei Yu
In this paper, we reported a modified preparation process for Cu 2 ZnSn(S,Se) 4 (CZTSSe) films. For this process, Al 2 O 3 capping layers were deposited on precursor films before selenization. It was found the capping layer can prevent the formation of separate Cu x Se phase on top of the film and facilitate a homogeneous growth of the crystalline grains during selenization. Detailed characterizations revealed the reason: the Al 2 O 3 capping layers can inhibit the incorporation of Se into the film in low-temperature region (below 350 °C). So the reaction between Se and Cu, which is thermodynamically preferential in this temperature region, can be prevented. As the disappearance of Cu x Se, the traditional top-to-down crystallization mode was substituted by a homogeneous crystallization mode. Therefore, CZTSSe films with homogeneous crystallization properties were achieved. By using the capping layers, the efficiencies of the solar cells were improved. In particular, the open-circuit voltage (V OC ) of the solar cell increased by ~18% by using the capping layers.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
CRYSTAL GROWTH & DESIGN
·
2015
·
IF 4.891
Hongling Guo,Yong Cui,Qingwen Tian,Shang Gao,Gang Wang,Daocheng Pan
The Cu2ZnSn(S,Se)4 (CZTSSe) has gained extensive attention in thin film solar cells due to their potential as a nontoxic, low-cost, and earth-abundant absorber material, and a rapid increase in power conversion efficiencies has been demonstrated in laboratory. Compared with the most successful hydrazine-based solution process, the nanocrystal-based ink method and non-hydrazine molecular precursor solution approach are more eco-friendly for fabricating high-efficiency CZTSSe solar cells. However, it is hard to obtain a complete large-grain CZTSSe absorber thin film which can facilitate the transport of photogenerated carriers while minimize grain boundary recombination. Here, we present a simple and effective strategy to significantly enhance grain growth of CZTSSe absorber layers by insetting Sb2S3, CuSbS2, and NaSb5S8 thin films. The incorporation of Sb-based thin films can induce grain growth in the selenization process, and did not produce the impurity phase confirmed by XRD patterns and Raman spectra. It was found that the order of the crystal growth promotion ability is Sb2S3 > CuSbS2 > NaSb5S8 under the same experimental conditions. The presented approach can be extended to other solution processes of fabricating CZTSSe solar cells to enhance their microstructural properties, which are critical for applications in CZTSSe absorbers with fine-grain layers.
研究领域:
材料科学
·
光伏技术
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Solar RRL
·
2021
·Vol. 5
·期 7
·2100181
·
IF 8.582
Yali Sun,Pengfei Qiu,Siyu Wang,Hongling Guo,Rutao Meng,Xiaowei Zhou,Li Wu,Wei Yu,Jianping Ao,Yi Zhang
Cu 2 ZnSn(S,Se) 4 are emerging as promising photovoltaic materials due to their outstanding photoelectrical performances, benign grain boundaries, and Earth-abundant constituent elements. However, there are largely distributed cation-disordering defects and defect clusters, which lead to an increase in recombination and a large open-circuit voltage deficit and thus deteriorate device performance. Herein, defect control for a high-efficiency Cu 2 ZnSn(S,Se) 4 solar cell by atomic layer deposition of aluminum oxide (ALD-Al 2 O 3 ) on the precursor film is reporter. Cu Zn defects and Sn-related deep defects are largely suppressed because of the decrease in Sn 2+ and the increase in Sn 4+ in the film by ALD-Al 2 O 3 on the precursor are found, and the crystallinity of absorber layer is improved from a double-layer structure to a completely single-layer structure. Furthermore, the carrier lifetime and recombination in the bulk and interface are significantly improved for devices with ultrathin Al 2 O 3 . Using this approach, the conversion efficiency increases from 8.8% to 11.0% and the open-circuit voltage deficit decreases from 0.621 to 0.577 V. Herein, a deep understanding of the relationship between Al 2 O 3 incorporation and high-efficiency Cu 2 ZnSn(S,Se) 4 devices and a new direction for controlling defects to further improve the performance of kesterite solar cells are provided.
研究领域:
材料科学
·
太阳能电池研究
✓ 已验证
DOI
高影响因子
SOLAR ENERGY
·
2021
·
IF 5.742
Yulin Liu,Bin Xu,Xiaoshuang Lu,Xiatong Qin,Pingxiong Yang,Junhao Chu,Ye Chen,Lin Sun
Excellent crystallinity and uniform composition distribution of the Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber are indispensable factors for the fabrication of photovoltaic device with excellent performance. Here, a facile and effective method is developed to improve the composition uniformity of CZTSSe absorber. It is inspiring that by replacing the acetates with chlorides as the solutes in the precursor solution , the issue of the composition non-uniformity especially for the distribution of Cu and Sn, which is ascribed to the rich-carbon in the acetate-based CZTSSe absorber, is able to be avoided. Due to less organic residues and composition uniformity, the grain size and the crystallinity of absorber could be significantly enhanced, and the photovoltaic performance of chloride-based CZTSSe solar cell is improved remarkably. Furthermore, substituting CuCl 2 with CuCl as the copper source in the precursor solution is able to obtain a stable solution, and the quality of CZTSSe absorber is further improved. As a consequence, 8.48% efficient CZTSSe solar cell has been yield.
研究领域:
材料科学
·
太阳能电池
✓ 已验证
DOI
高影响因子
Materials Today Communications
·
2019
·
IF 1.859
Xunan Shen,Chao Zhang,Yang Feng,Wei Li,Guifeng Chen,Chengchun Tang
In this work, Cu 2 ZnSn(S,Se) 4 thin films were prepared by sol-gel methods based on dimethyl sulfoxide solutions with H 3 BO 3 additive. The morphological, structural, compositional and photovoltaic properties of the Cu 2 ZnSn(S,Se) 4 thin films were investigated. We found that the formation of voids, cracks and fine-grain layers were suppressed effectively with slight H 3 BO 3 . Based on the decrease of these micro defects, the series resistance decreased and shunt resistance increased largely. And the band gap of CZTSSe solar cells broaden from 1.031 eV to 1.064 eV. The best solar cell showed an open-circuit voltage of 440.1 mV, short-circuit current density of 28.15 mA/cm 2 , fill factor of 58.81% and power conversion efficiency of 7.27% under air mass 1.5 (100 mW/cm 2 ) illumination.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
SUPERLATTICES AND MICROSTRUCTURES
·
2019
·
IF 2.385
Yong Cui,Junye Tong,Hongmei Shao,Gang Wang,Daocheng Pan
Novel semiconductor Cu 2 BaSn(S,Se) 4 thin film with orthorhombic structure has been successfully fabricated via solution process. XRD、EDS、XPS and SEM were used to investigate the structure、elemental composition、valence states and morphology of the Cu 2 BaSn(S,Se) 4 thin film . Different selenization temperatures that affected CBTSSe thin film quality were investigated. The photoresponse property of Cu 2 BaSn(S,Se) 4 thin film indicated that it had potential application in low-cost thin film solar cells. The solution process to fabricate Cu 2 BaSn(S,Se) 4 /CdS heterojunction thin film solar cells demonstrated that Cu 2 BaSn(S,Se) 4 thin film could be applied as absorb layer in the thin film solar cells.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2017
·
IF 4.784
Shoushuai Gao,Yi Zhang,Jianping Ao,Shuping Lin,Zhaojing Zhang,Xiuling Li,Dongxiao Wang,Zhiqiang Zhou,Guozhong Sun,Fangfang Liu,Yun Sun
The direction of Se-Mo-Se sheets to the Mo film is crucial for the thickness of Mo(S,Se) 2 and the electrical conductivity , so as the back contact of Cu 2 ZnSn(S,Se) 4 solar cells. In this study, the preferred orientation of Mo(S,Se) 2 film changes from (100) peak to (103) peak, i.e. from perpendicular to the substrate to tilted to the substrate for Se-Mo-Se sheets as the roughness decrease of Mo back contact layer. The Se vapor can easily diffuse through the channels between Se-Mo-Se sheets when the formed Mo(S,Se) 2 layer is (100) peak preferred with Se-Mo-Se sheets perpendicular to the substrate, and thus excessively thick Mo(S,Se) 2 will be formed. Whereas, the Se-Mo-Se sheets are tilted to substrate when the preferred orientation of Mo(S,Se) 2 is (103) peak. The tilted Se-Mo-Se sheets can act as a natural Se diffusion barrier to suppress the Se vapor diffusion through the already formed Mo(S,Se) 2 layer to further selenize the remaining Mo film, and also can provide a good electrical conductivity. As a result, the thickness of Mo(S,Se) 2 sharply decreased from 1500 nm to 200 nm with the surface morphology change of Mo back contact, which resulting in the decrease of series resistance of Cu 2 ZnSn(S,Se) 4 solar cells from 2.94 Ω cm 2 to 0.49 Ω cm 2 , and the increase of conversion efficiency of Cu 2 ZnSn(S,Se) 4 solar cells from 6.98% to 9.04%.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
Nano Energy
·
2020
·
IF 16.602
Qing Yu,Jiangjian Shi,Linbao Guo,Biwen Duan,Yanhong Luo,Huijue Wu,Dongmei Li,Qingbo Meng
For Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells, eliminating multi-layer crystallization is a key issue of achieving high quality CZTSSe absorber layers and high cell performance. In this work, the formation mechanism of the multi-layer crystallization is revealed, that is, the reaction between CZTS and Mo may give the secondary phase, which subsequently acts as crystal nucleus to facilitate the CZTSSe crystal growth at back interface (Mo/CZTSSe), leading to multi-layer crystallization. By introducing MoO 3 isolating layer, this undesired reaction can be well prevented, and high quality single-layer crystals are obtained. This absorber film with fewer defects and secondary phases exhibits better semiconductor properties . Based on this regulated CZTSSe absorber layer, 11.68% (active area: 0.16092 cm 2 ) and 10.69% (mask area: 0.17586 cm 2 ) certified power-conversion-efficiency have been achieved with significant increase in the open-circuit voltage and fill factor.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
太阳能
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2020
·
IF 3.83
Misganaw Alemu Zeleke,Dong-Hau Kuo
The quaternary chalcogenide Cu 2 Zn(Sn 1-x Ge x )(S,Se) 4 bulks, where x is G e / [ G e + S n ] molar ratios of 0, 0.15, 0.30, and 0.45 were synthesized via reactive liquid phase sintering at 600 °C for 30 min in the tube furnace and characterized systematically. Together with Sb 2 S 3 as a reactive liquid phase sintering aid, the effects of Ge incorporation on densification, grain boundary, crystal phase purity, crystalline size, and electrical properties were studied. The morphology of the resulted Cu 2 Zn(Sn 1-x Ge x )(S,Se) 4 bulk was found to be more densified and compacted at G e / [ G e + S n ] molar ratio of 0.15 compared to the rests. The X-ray diffraction peaks were shifted towards a higher angle as Ge fraction was increased. The hole concentrations for the entirely p-type bulks were determined to be 3.67 × 10 18 , 1.40 × 10 18 , 1.28 × 10 18 , and 8.90 × 10 17 cm −3 at G e / [ G e + S n ] molar ratios of 0, 0.15, 0.30, and 0.45, respectively. The effects on conductivity and mobility were consistent with their interrelations. Hence, the synthesis and study of Ge incorporated Cu 2 ZnSn(S,Se) 4 bulk using powder technique allows identifying the composition which is expectedly more important for the fabrication of thin film solar cells.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2020
·
IF 4.473
Yiming Wang,Yanchun Yang,Chengjun Zhu,Hongmei Luan,Ruijian Liu,Lei Wang,Chenxi Zhao,Xiaogong Lv
Substitution of Zn with Mg has been reported to suppress CuZn defects, which can improve the photoelectric performance of Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic devices. In our work, the electrical property enhancement of an absorbing layer can be found by incorporating Mg content into the as-prepared precursor solution, forming an alloyed Cu2MgxZn1-xSn(S,Se)4 (CMZTSSe) phase and increasing the photoelectric performance of devices. By adjusting the doping ratio of Mg, we systemically study the impact of Mg content on the crystal structure, thickness, and electrical properties of the Cu2MgxZn1-xSn(S,Se)4 absorbing layer. Also, the photoelectric performance of Cu2MgxZn1-xSn(S,Se)4 solar cells have a large improvement, and the optimal photoelectric conversion efficiency (PCE) of 7.76% for devices is obtained. Our results offer the finding that Mg doping can optimize the electrical properties of Cu2ZnSn(S,Se)4 photovoltaic devices.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2014
·
IF 5.9
Wangen Zhao,Gang Wang,Qingwen Tian,Yanchun Yang,Lijian Huang,Daocheng Pan
Cu2ZnSn(S,Se)4 semiconductor is a promising absorber layer material in thin film solar cells due to its own virtues. In this work, high quality Cu2ZnSn(S,Se)4 thin films have been successfully fabricated by an ethanol-based sol–gel approach. Different from those conventional sol–gel approaches, SnS2 was used as the tin source to replace the most commonly used SnCl2 in order to avoid the possible chlorine contamination. In addition, sodium was found to improve the short-circuit current and fill factor rather than the open-circuit voltage due to the decrease of the thickness of small-grained layer. The selenized Cu2ZnSn(S,Se)4 thin films showed large densely packed grains and smooth surface morphology, and a power conversion efficiency of 6.52% has been realized for Cu2ZnSn(S,Se)4 thin film solar cell without antireflective coating.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）