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JOURNAL OF ALLOYS AND COMPOUNDS · 2018 · IF 3.779

Nitrogen content dependent microwave absorption property of nitrogen-doped SiC materials annealed in N2: Opposing trends for microparticles and nanowires

Shun Dong,Wenzheng Zhang,Ping Hu,Yumin Zhang,Jiecai Han,Xiaoguang Luo

Nitrogen-doped SiC microparticles (SiCp) and SiC nanowries (SiCNWs) with different nitrogen contents were successfully synthesized by a simple and effective method, in which SiCp and SiCNWs were directly annealed in N 2 at 1500 °C with different holding times to adjust the contents of nitrogen for the first time. The nitrogen content of N-doped SiCp and SiCNWs increased with holding time, from 2.91 at.% and 3.05 at.% for 1 h to 5.05 at.% and 5.25 at.% for 4 h. The size of N-doped SiCp and SiCNWs was larger than that of pristine SiCp and SiCNWs, while the size tended to increase firstly and then decrease. The results of dielectric parameters showed that both real part ε′ and imaginary part ε ″ of permittivity of the samples increased greatly with increasing N contents in most frequency range, while two opposing trends for nitrogen content dependent microwave absorption property of N-doped SiCp and SiCNWs were observed. The electromagnetic (EM) wave absorption capability of N-doped SiCp was significantly improved with increasing nitrogen content compared with fully permeable wave pristine SiCp, and the minimum reflection loss (RL m ) and maximum effective absorption bandwidth (EAB) could be up to −33.5 dB and 4.4 GHz, respectively. The EM wave absorption performance of N-doped SiCNWs exhibited a decreasing tendency with increasing nitrogen content, and the RL m was decreased from −57 dB for pristine SiCNWs, to −51.2 dB for SiCNWs with 3.05 at.% N, and to −29.3 dB for SiCNWs with 5.25 at.% N. Moreover, if the experimental process in present study was decomposed into heat-treatment and N-doping, the heat-treatment played extremely negative effect on the EM wave absorption performance of samples, while N-doping still had positive impact on the EM wave absorption performance. It is believed that the current work will provide a new insight into the fabrication of SiC materials with fascinating properties by doping.

CAS / MDL: 409-21-2
研究领域: 材料科学 · 电磁学
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Additive Manufacturing · 2022 · IF 11.632

Fabrication of high-strength Si/SiC composites with low shrinkage rates via vat photopolymerization technology and liquid silicon infiltration

Weizhe Tang,Tong Zhao,Rui Dou,Li Wang

Vat photopolymerization (VPP) technology has shown great application potential in the manufacture of high-precision complex silicon carbide (SiC) based ceramic components. However, in comparison with the conventional fabrication technologies, the SiC ceramics produced by VPP technology have insufficient strengths or relatively larger shrinkage rates to meet the requirements of practical applications. Herein, we develop a novel bimodal SiC material recipe for VPP technology and prepare Si/SiC composites by the consequent liquid silicon infiltration (LSI) method. The addition of fine SiC particles improves the material’s mechanical properties significantly. The final products possess low shrinkage rates (3.52 ± 0.26% in the x-direction, 3.73 ± 0.39% in the y-direction, and 4.69 ± 0.35% in the z-direction) as well as high flexural strength (363.23 ± 14.21 MPa) and low open porosity of 0.097%. The material compositions and fabrication strategies proposed in this work demonstrate an efficient way for the additive manufacturing of high-precision complex Si/SiC ceramic parts (e.g. lightweight space mirrors and structural ceramic parts).

研究领域: 材料科学 · 先进制造
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