Dust on outdoor glass will significantly reduce glass transmittance in various applications and even damage solar cell panels. Here, the effects of Sb doping on the structure and photoelectric properties of a Sb-doped SnO 2 –SiO 2 (ATO-SiO 2 ) film prepared on a glass substrate with a sol-gel method and the dust removal performance of the resulting film were studied. The results show that the Sb-doped SnO 2 –SiO 2 film consists of a SnO 2 tetragonal rutile phase, but the doped Sb decreases the sample crystallinity. With an increase in the Sb doping concentration, two lattice parameters of the ATO-SiO 2 film, a and c , show “M"-shaped changes. The nanoparticle size first decreases and subsequently increases when the Sb doping concentration is over 6 mol%. The transmittance of the substrate glass coated with this film in the visible wavelength range (380–780 nm) decreases from 86.3% to 82.7%. The square resistance first decreases and subsequently increases, while the dust removal performance first increases and subsequently decreases. At a 12 mol% Sb doping concentration, the square resistance is minimal (4.64 × 10 6 Ω/□). The maximal dust removal performance is 64%.
High transmittance and strong dust-removing film has a broad potential application prospect in architectural glass, solar photovoltaic glass, automotive glass, etc. In this paper, SnO 2 is used as the antistatic agent, and SiO 2 as the matrix. The effects of Sn/Si molar ratio on the structure and properties of the SnO 2 -SiO 2 film prepared on quartz glass substrate with sol-gel dipping were studied. The film was analyzed by X-ray diffractometer (XRD), Fourier transform infrared (FTIR) spectroscopy and Scanning electron microscopy (SEM). Ultraviolet-Visible-Near Infrared Spectrometer (UV–VIS–NIR) and Hall effect instrument tested the photoelectric properties. Falling dust experiment was used to determine the film’s dust-removing property. The results show that the SnO 2 -SiO 2 film is composed of nano particles of SnO 2 tetragonal rutile phase and amorphous SiO 2 , and has antistatic dust-removing property. With the increase of Sn/Si molar ratio, the crystallization quality and average grain size of the film increases, while the square resistance decreases continuously. The visible transmittance fluctuates with an amplitude of no more than 1.2%, and obtained the minimum value 87.246% at Sn/Si molar ratio of 2:1. Moreover, the film’s dust-removing performance improves continuously, which obtained the best, 50%, at Sn/Si molar ratio of 2:1.
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