ACS Applied Nano Materials
·
2020
·
IF 0
He Tian,Xiancheng Meng,Juehan Yang,Chao Fan,Shuo Yuan,Xia An,Chun Sun,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Zhongming Wei,Erping Li
Two-dimensional (2D) nanomaterials have been attracting intensive interest due to their unique physical and optoelectronic properties. Van der Waals nanolayered heterostructures based on different 2D nanomaterials provide a state-of-the-art platform for investigating the physical phenomena and have extended the applications of 2D nanomaterials, leading to an era of next-generation high-performance electronic and optoelectronic technology. Herein, vertical 2D SnS/SnS2 p–n and SnSe2/SnS2 n–n nanolayered heterostructures are constructed by exfoliating individual materials and stacking them artificially. The two types of back-gate field-effect phototransistors show clear rectifying behaviors with the existence of band offset and excellent optoelectronic performances. The SnS/SnS2 p–n nanolayered heterostructure shows an ambipolar behavior with a hole mobility of 6.96 cm2·V–1·s–1 and electron mobility of 0.68 cm2·V–1·s–1, while the SnSe2/SnS2 n–n nanolayered heterostructure shows an intense n-type behavior with electron mobility of 3.78 cm2·V–1·s–1 and a high on/off ratio of over 105. Interestingly, due to the band alignments and built-in potentials in the two types of nanolayered heterostructures, the phototransistors exhibit enhanced responsive performances to illuminations of three-primary-color lasers (λ = 405, 532, and 650 nm) compared to the individual components. The SnS/SnS2 phototransistor shows a high photoresponsivity of 3567 A W–1, a high detectivity of 3.64 × 1013 Jones, and a fast response time of 0.8 ms. The SnSe2/SnS2 phototransistor also exhibits a high photoresponsivity of 1793 A W–1 and a fast response time of 15.4 ms.
研究领域:
材料科学
·
纳米技术
·
光电技术
✓ 已验证
产品关联
DOI
CHEMICAL ENGINEERING JOURNAL
·
2025
·
IF 13.2
Zijian Zhang,Xiuyang Tang,Yu Gao,Xinming Ma,Kaihan Chang,Lipin Chen,Song Xue,Gangri Cai,Jin Shi Zhao
Two-dimensional (2D) materials have drawn extensive interest for applications in thin-film electronics, optoelectronics, and sensing. Among them, tin disulfide (SnS 2 ) is particularly attractive owing to its low cost, environmental friendliness, and excellent chemical and thermal stability. Importantly, the synthesis and deposition strategies for 2D materials play a critical role in controlling sulfur vacancies, tuning crystal phase and morphology, and ultimately determining device performance. Here, we demonstrate a solution-processed memristor based on SnS-SnS 2 composite thin films fabricated by spin-coating followed by sequential thermal reduction. Partial conversion of SnS 2 into SnS produces a phase-engineered architecture, where vertically aligned SnS domains are embedded within the SnS 2 matrix. Optimizing the SnS/SnS 2 ratio enhances resistive switching (RS) characteristics and synaptic emulation. The improved device behavior is mainly attributed to the controlled generation and migration of sulfur vacancies, together with internal phase modulation enabled by the vertical stacking structure. This scalable, low-temperature strategy provides a promising route toward high-performance neuromorphic memory devices.
研究领域:
材料科学
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纳米电子学
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神经形态计算
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薄膜技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2020
·
IF 4.189
Yecheng Cheng,Pengtao Tang,Pei Liang,Xueyin Liu,Dan Cao,Xiaoshuang Chen,Haibo Shu
The rational control of the nucleation and growth kinetics to enable the high-quality growth of two-dimensional (2D) semiconducting metal chalcogenide heterostructures is a key step for the realization of their applications in nanoelectronics and optoelectronics. Here, we report a facile one-step chemical vapor deposition synthesis of 2D SnS–SnS2 heterostructures with controlled interfacial structures and stacking configurations via tuning S-precursor concentration during the growth. We demonstrate that the change of S-precursor concentration can drive growth transition from vertically stacking SnS2/SnS van der Waals heterostructures to SnS/SnS2 core–shell structures with both the lateral and vertical interfaces. Such a transition originates from a delicate competition between the nucleation of SnS and SnS2. High-resolution spectroscopy measurements and density functional theory (DFT) calculations reveal these SnS–SnS2 heterostructures with the type-II band alignment, and the measured valence and conduction band offsets are 1.33 and 0.34 eV for vertical SnS2/SnS heterostructures and 1.43 and 0.54 eV for SnS/SnS2 core–shell ones, respectively. This work provides an efficient strategy to control the growth of 2D SnS–SnS2 heterostructures for optoelectronic applications, such as photodetectors and solar cells.
研究领域:
材料科学
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纳米电子学
·
光电子学
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半导体异质结构
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凝聚态物理
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2023
·
IF 15.1
Long Li,Huyin Su,Licheng Zhou,Zhixiang Hu,Tiankun Li,Bingbing Chen,Hua-Yao Li,Huan Liu
Metal sulfide-based gas sensors have the advantage of high sensitivity at room temperature, enabling high integration and low power consumption. However, a trade-off between low baseline resistance and good long-term stability at room temperature still needs to be addressed. Therefore, a single-atom Ce-targeted regulation strategy for p-SnS/n-SnS 2 was proposed. By doping different amounts of Ce, the amount and size of SnS quantum dots on the surface of SnS 2 can be regulated. Furthermore, Sn-S-Ce bonds are formed by combining single-atom Ce with SnS, which effectively hinders the growth and oxidation of SnS quantum dots, as evidenced by STEM, XPS, DFT, FTIR and EAXFS methods. Due to the unique energy band structure of p-SnS and n-SnS 2 , Ce-doped SnS quantum dots serve as electronic sensitizers, effectively increasing the carrier concentration in SnS 2 . The optimal gas sensor based on the 1% Ce-doped SnS/SnS 2 composites enables high sensitivity (with a response of 22.1 to 1 ppm NO 2 ), ultralow detection limit (1 ppb), excellent long-term stability at room temperature, and a lower baseline resistance. This engineering strategy of metal sulfide semiconductor heterostructures through single-atom targeted regulation provides new insights for further optimizing the composite system.
研究领域:
材料科学
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半导体物理
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传感技术
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纳米材料
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表面化学
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环境监测
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Qian Li,Fuyuan Yu,Yaru Cui,Juan Wang,Yan Zhao,Jianhong Peng
SnS and SnS 2 are two promising anode materials with excellent theoretical capacity for Sodium ion batteries . However, severe volume collapse and low electric charge conductivity dramatically affect the electrochemical performance of SnS and SnS 2 . As a consequence, SnS-SnS 2 heterostructures are constructed to improve the conductivity of the anode material. The volume effect is prevented by compounding with Graphene Oxide (GO) to ensure cyclic stability and improve the initial coulombic efficiency of anode materials. The first-principles simulation is used to simulate SnS, SnS 2 , SnS-SnS 2 and SnS-SnS 2 @GO respectively, and the comparison is made through actual experiments. Experimental studies indicate that SnS-SnS 2 @GO processes superior conductivity and cycle stability, unique nano-flake structure and the composite modification of GO can restrain the volume effect and ensure long cycle stability of the anode material (450.6 mAh·g −1 after 100 cycles). Moreover, attributing to the p-n heterostructures, the internal charges transfer and improve the electrical conductivity of SnS-SnS 2 can be promoted obviously. Simultaneously, it has been detected that the multilayer SnS-SnS 2 heterostructures combining GO effectively improve the conductivity and ensure good structure stability. Therefore, SnS-SnS 2 @GO composites can be considered as an ideal anode material for sodium ion batteries.
研究领域:
材料科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2019
·Vol. 7
·期 25
·15320-15332
·
IF 10.733
Deliang Cheng,Lichun Yang,Jiangwen Liu,Renzong Hu,Jun Liu,Ke Pei,Min Zhu,Renchao Che
The exploitation of high-performance anode materials is one of the key challenges for the development of lithium-ion batteries. Herein, we report a micro-nano structured (SnS–SnS2–S)/FLG (few-layer graphene) composite in which the in situ formed SnS, SnS2 and S nanoparticles are tightly supported by the in situ exfoliated FLG. The multi-phase structure could induce the formation of a high fraction of interfaces, enabling the interface-controlled lithiation/delithiation, which is characterized by large interfacial storage and fast interfacial diffusion, and boosting the electrode performance at high rates greatly. On the other hand, the step-wise lithiation/delithiation of S, SnS2 and SnS can offer nano-spatial confinement effects to accommodate the volume expansion and particle aggregation, and thus enhance the structural stability of the electrode. Meanwhile, the FLG matrix can serve as a robust layer to further maintain the structural integrity of the electrode. As an anode for lithium-ion batteries, the composite exhibits an ultrahigh gravimetric/volumetric capacity (1062.2 mA h g−1/2018 mA h cm−3 at 0.2 A g−1), ultrahigh rate (842/756 mA h g−1 even at 5.0/10.0 A g−1) and ultrastable cyclability (100%/93.6% capacity retention after 1000/2000 cycles at 1.0/10.0 A g−1). Even in full-cells and sodium-ion batteries, superb comprehensive performance is demonstrated. Therefore, the (SnS–SnS2–S)/FLG composite could be a new promising anode material for application in batteries.
研究领域:
材料科学
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储能技术
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电化学
·
纳米材料
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电池技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）