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SnSe材料
Materials Today Energy · 2022 · IF 9.257

Enhancing the thermoelectric performance of solution-synthesized SnSe-based materials via incorporating Ti3C2Tx MXene

Hong Zhang,Yao Chen,Xiaofang Liu,Hengyang Wang,Chengzhi Niu,Sikang Zheng,Bin Zhang,Xu Lu,Guoyu Wang,Guang Han,Xiaoyuan Zhou

SnSe-based materials, comprising nontoxic, eco-friendly and abundant elements, have intrinsically low lattice thermal conductivity , which are promising candidates for thermoelectric conversion. However, unmodified, polycrystalline SnSe reveals poor electrical transport properties due to the lower carrier mobility . Herein, two-dimensional Ti 3 C 2 T x MXene has been incorporated into SnSe matrix by solution synthesis and fast consolidation, which efficiently increases the carrier mobility and concentration; accordingly, the electrical conductivity is improved in the temperature range of 323–523 K. Meanwhile, SnSe/Ti 3 C 2 T x composites achieve diminished lattice thermal conductivity, delivering a low value of 0.41 W m −1 K −1 at 773 K. Ultimately, a peak zT of 0.93 at 773 K is attained in SnSe/Ti 3 C 2 T x composite with addition of 0.3 wt% Ti 3 C 2 T x , representing a 66% increase compared to that of SnSe. This work sheds light on the thermoelectric performance improvement of polycrystalline SnSe by controllably incorporating two-dimensional MXene.

研究领域: 材料科学 · 能源转换技术
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2023 · IF 5.7

p-type Sn0.98Ag0.02Se with low thermal conductivity synthesized by hydrothermal method

Zi-Chen Wang,Xiao-Di Jiang,Yu-Xian Duan,Xu Wang,Zhen-Hua Ge,Jin-Ming Cai,Xiao-Ming Cai,Hong-Lin Tan

Tin selenide exhibits outstanding thermoelectric properties. Among its various forms, multicrystalline SnSe stands out as a more practical choice compared to single-crystal SnSe, owing to its straightforward chemical synthesis process, enhanced processability, and scalability. Herein, we synthesized p-type polycrystalline Sn 1−x Ag X Se bulk materials (x = 0, 0.01, 0.015, 0.02, 0.025, 0.03) using a simple hydrothermal and hot pressing method. Characterization methods such as XRD , Raman and XPS were used to demonstrate the successful doping of Ag + into the SnSe matrix. When the doping concentration reached Sn 0.98 Ag 0.02 Se (x = 0.02), Ag + reached the optimal concentration in the SnSe matrix, causing significant lattice distortion which increased phonon scattering and lowered the thermal conductivity , resulting in Sn 0.98 Ag 0.02 Se achieving ZT max = 1.14. However, when the doping concentration exceeded Sn 0.98 Ag 0.02 Se (x > 0.02), excess silver ions precipitated, partially acting as charge carriers, leading to a significant increase in electrical conductivity , resulting in Sn 0.97 Ag 0.03 Se having an electrical conductivity of 6860 s/m at 773 K. Compared to the pure phase, the electrical conductivity of Sn 0.97 Ag 0.03 Se increased by 259 %, and the ZT value of Sn 0.98 Ag 0.02 Se increased by 178%. This work demonstrates that Ag + is an effective p-type dopant in the SnSe system and indicates that high ZT values in SnSe can be achieved through a simple, low-cost, and environmentally friendly method.

CAS / MDL: 7782-49-2
研究领域: 材料科学 · 能源材料 · 物理化学
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ACS Applied Materials & Interfaces · 2024 · IF 8.3

Heterogeneous Cu Doping Facilitates Excellent Thermoelectric and Mechanical Performance in n-Type SnSe Composites

Ze Li,Wen-Jie Li,Jun Guo,Zi-Yuan Wang,Xing Yang,Yu-Ke Zhu,Tian-En Shi,Yi-Xin Zhang,Jing Feng,Zhen-Hua Ge

SnSe materials have attracted extensive attention in thermoelectrics due to their low thermal conductivity. Nevertheless, the thermoelectric properties of n-type polycrystalline SnSe are still low, and metallic Sn distributed in the SnSe1–x materials would affect the repeatability of thermoelectric performance. Herein, the thermoelectric properties of n-type polycrystalline SnSe0.95-based composites are highly enhanced by heterogeneous Cu doping. The carrier concentration of the SnSe0.95 material was optimized by SnCl2 doping. The strategy of heterogeneous Cu doping is employed in further improving the thermoelectric performance of the SnCl2-doped SnSe0.95 materials. In addition, partial Cu+ doping tunes the electron concentration to enhance the Seebeck coefficient. Moreover, metallic Sn distributed along the grain boundaries can be stabilized by forming Cu6Sn5 alloys, which improve the thermal stability of bulk composites. Excessive Cu particles and SnCl2 precipitates strengthen phonon scattering for lowering the lattice thermal conductivity. Ultimately, a peak ZT of 1.55 is yielded at 773 K in the SnSe0.95–1 wt % SnCl2–1 wt % Cu bulk composite, whose mechanical hardness is also increased. Hence, these results promote a feasible approach to simultaneously enhance the thermoelectric and mechanical properties of n-type SnSe-based composites, which might be worth exploring in other thermoelectric materials.

研究领域: 材料科学 · 热电学
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Journal of Materials Chemistry C · 2025 · IF 5.1

Highly Enhanced Thermoelectric Performance in Halogen Elements Modified SnSe₂ Materials via Point Defects Engineering

Rong Li,Chong-yu Wang,Qiu-Yu Luo,Ze Li,Xing Yang,Wang-Qi Bao,Yi-Xin Zhang,Jing Feng,Zhenhua Ge

Lead-free SnSe2 materials have intrinsic low thermal conductivities and are promising thermoelectrics. However, their relatively low electrical conductivity limits the improvement of thermoelectric performance. This study successfully introduced halogen elements (X = F, Cl, Br, and I) into SnSe2 to increase carrier concentration for better thermoelectric performance. The defect formation energy calculation results showed the lowest value for SeCl, indicating that incorporating Cl into the SnSe2 matrix could achieve higher thermoelectric performance. Experimental results further verified this conclusion. At 323 K, the electrical conductivity for the SnSe1.94Cl0.06 sample was 86 S cm–1, 61 times higher than that of pristine SnSe2. Combined with the DFT calculation results, the decreased bandgap of the Cl-doped sample benefitted the transport of carriers. Due to the increased electrical conductivity, a peak power factor value of 457μW m–1 K–2 was achieved at 473 K. Meanwhile, the formed point defects decreased the lattice thermal conductivity to 0.38 W m–1K–1 at 773 K, 14% lower than that of the pristine SnSe2 sample. Consequently, the SnSe1.97Cl0.03 sample obtained a peak ZT value of 0.63 at 773 K, five times higher than that of pristine SnSe2. This strategy of thermoelectric performance optimization through the introduction of halogen elements can be applied to other thermoelectric material systems.

研究领域: 材料科学 · 热电材料 · 固体物理 · 缺陷工程 · 能量转换材料
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