Adopting semiconductor materials with light-trapping architectures as the surface-enhanced Raman spectroscopy (SERS)-active substrates has received increasing attention, in which the multiple reflection and scattering of electromagnetic waves can improve the enhancement factor. However, the fabrication of these semiconductor SERS-active substrates commonly requires complicated processes, and these methods normally result in non-uniform and isolated particles/flakes, which have fundamental difficulties in meeting the practical needs in high performance and reliable SERS substrates. Herein, we demonstrate that SnSe2 nanoplate arrays (NPAs) via self-assembled growth can serve as uniform, highly sensitive and reliable SERS substrates. The cavity formed by the SnSe2 NPAs can trap light efficiently (∼96%) and thus improve the enhancement factor. Benefiting from the synergistic effect of the charge-transfer process and enhanced light trapping, the resulting SERS substrates based on pure SnSe2 NPAs show an ultralow detection limit (1 × 10−12 M), a high enhancement factor (6.33 × 106) and excellent uniformity (relative standard deviations down to 7.7%), demonstrating one of the highest sensitivities amongst the reported semiconductor SERS substrates. Furthermore, the effects of different SnSe2 structural configurations (planar vs. cavity), the height and tilt angle of the SnSe2 NPAs on the performance of SERS detection are systematically investigated. It is discovered that the SERS performance is strongly dependent on both the light-trapping ability and the absorption loss. We believe that our results not only provide an effective strategy to obtain tunable, uniform and high performance SERS substrates, but also lead to further understanding of designing 3D light trapping architectures.
Mei Liu,Ying Shi,Meimei Wu,Yuan Tian,Haonan Wei,Qianqian Sun,Muhammad Shafi,Baoyuan Man
Two-dimensional (2D)-layered semiconductor materials have attracted considerable attention in surface-enhanced Raman scattering spectroscopy (SERS) technology owing to their high uniformity, excellent reproducibility, and ultra-flat surfaces without dangling bonds. However, they are rarely used in the UV laser-excited surface-enhanced Raman scattering spectroscopy (UV–SERS) field. In this article, 2D-layered tin diselenide (SnSe 2 ) nanoflakes were investigated as a UV–SERS substrate for the first time. The strong absorption in the UV region of SnSe 2 induces a pre-resonance Raman (pre-RR) effect and charge transfer (CT) between the substrate and the probe molecules. The UV–SERS signal of crystal violet (CV) molecules adsorbed on SnSe 2 nanoflakes was obtained even though the concentration was low at 10 −7 mol/L. The indirect band gap structure of the SnSe 2 nanoflake plays a significant role in promoting the electrons excited by incident photons and the CT process. This is a new phenomenon for 2D semiconductor materials in the UV–SERS field. The results will be helpful to develop UV–SERS technology based on 2D-layered materials and to provide a promising method to understand the chemical enhancement mechanism of UV–SERS.
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