ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Qinghui Jiang,Huishan Hu,Junyou Yang,Jiwu Xin,Sihui Li,Giuseppe Viola,Haixue Yan
SnTe has attracted considerable attention as an environmentally friendly thermoelectric material. The thermoelectric figure of merit ZT value is related to low thermal conductivity that can be successfully realized using fabrication of nanostructures. However, the practical realization of SnTe nanostructured composites is often limited by long reaction time, low yield, and aggregation of nanoparticles. Herein, a simple substitution reaction between Cu2Se and SnTe was adopted to realize Cu1.75Te-SnTe nanocomposites with unique all-scale hierarchical structures. On the atomic level, the substitution SeTe is introduced into the lattice via the reaction between Cu2Se and SnTe; on the nanoscopic level, Cu1.75Te nanoinclusions with 10 nm size are evenly distributed at the grain boundaries of SnTe with average grain size less than 1 μm; on the mesoscopic level, these SnTe grains stack up to larger particles (10–20 μm), which are further surrounded by Cu1.75Te grains with a predominant size of 1–2 μm. These hierarchical structures, together with additional SnTe stacking faults, can effectively scatter phonons with different wavelengths to reduce the lattice thermal conductivity. At 873 K, a thermal conductivity value of 0.49 W·m–1·K–1 was obtained in the SnTe nanocomposite sample with 0.057 Cu1.75Te molar content, which is 40% lower than that of the pristine SnTe. By using the same approach for scattering phonons across integrated length scales, a ZT value of 1.02 (∼80% enhancement, compared with that of the pristine SnTe) was achieved at 873 K for the sample of the SnTe nanocomposite with 0.034 Cu1.75Te molar content. This large increase in ZT values highlights the role of multiscale hierarchical architecture in controlling phonon scattering, offering a viable alternative to realize higher performance thermoelectric bulk materials.
研究领域:
材料科学
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热电学
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Acta Metallurgica Sinica-English Letters
·
2025
·
IF 3.9
Yuan Baocheng,Wen Yi,Wang Lei,Li Zhihao,Wang Hong-Chao,Chang Cheng,Zhao Li-Dong
Thermoelectric materials possess tremendous potential in energy regeneration owing to their capacity to produce power directly from heat. SnTe, a lead-free compound, is a prospective thermoelectric material. However, because of its elevated thermal conductivity, the thermoelectric performance of undoped SnTe remains at a low level. In this work, we induce ternary compounds CuFeS 2 into the SnTe matrix by ball milling. We observe the decomposition of CuFeS 2 , which decomposes into FeS, Cu 2 S, and other binary compounds. These newly generated binary compounds form micropores and secondary phases in the matrix. Combined with the natural grain boundaries in the polycrystal, they form all-scale hierarchical structures within the material, resulting in reduced lattice thermal conductivity. Overall, the produced SnTe + 2 wt% CuFeS 2 composites show the peak dimensionless figure of merit ( ZT ) up to 0.33 at 673 K, an increase of ~ 100% compared to the undoped SnTe.
研究领域:
材料科学
·
能源工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2017
·
IF 3.133
Xiao Zhang,Yiming Zhou,Yanling Pei,Yuexing Chen,Bifei Yuan,Shuangmei Zhang,Yuan Deng,Shengkai Gong,Jiaqing He,Li-Dong Zhao
SnTe, one lead-free analogue of PbTe, has been paid attention in thermoelectric community because it has the similar rock-salt crystal structure and electronic band structure . However, SnTe possesses a very high total thermal conductivity (∼10.0 W m −1 K −1 at room temperature) and a mediocre ZT (∼0.2 at 723 K). In this study, to reduce its thermal conductivity, we prepare SnTe samples by melting reaction followed by mechanical alloying and spark plasma sintering . We demonstrate that both total thermal conductivity and lattice thermal conductivity can be considerably reduced through reducing particle size from micro-scale to nano-scale via facially mechanical alloying method. Experimental results show that the total thermal conductivity at room temperature can be reduced from ∼10 W m −1 K −1 for SnTe ingot to ∼3Wm −1 K −1 for SnTe with mechanical alloying 25 h. Correspondingly, the lattice thermal conductivity at room temperature was reduced from ∼5Wm −1 K −1 to ∼2Wm −1 K −1 . Combination of reduced thermal conductivity and moderate power factor, average ZT ave can be increased by 33.3%, from 0.09 for SnTe ingot to 0.12 for SnTe with nano-grain size.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Bang-Zhou Tian,Jie Chen,Xu-Ping Jiang,Jun Tang,Da-Li Zhou,Qiang Sun,Lei Yang,Zhi-Gang Chen
Interface engineering has been regarded as an effective strategy to improve thermoelectric (TE) performance by modulating electrical transport and enhancing phonon scattering. Herein, we develop a new interface engineering strategy in SnTe-based TE materials. We first use a one-step solvothermal method to synthesize SnTe powders decorated by Sb2Te3 nanoplates. After subsequent spark plasma sintering, we found that an ion-exchange reaction between the Sb2Te3 and SnTe matrixes happens to result in Sb doping and the formation of SnSb nanoparticles and the recrystallization of the nanograined SnTe at the grain boundaries of the SnTe matrix. Benefitting from this unique engineering, a significantly reduced lattice thermal conductivity of ∼0.64 W m–1 K–1 and a high zT of ∼1.08 (∼100% enhanced) at 873 K are achieved in SnTe–Sb0.06. Such improved TE properties are attributed to the optimized carrier concentration and valence band convergence due to the Sb doping and enhanced phonon scattering by interface engineering at the grain boundaries. This work has demonstrated a facile and effective method to realize high-TE-performance SnTe via interface engineering.
研究领域:
材料科学
·
能源材料
·
热电材料
✓ 已验证
DOI
PubMed
高影响因子
JOURNAL OF SOLID STATE CHEMISTRY
·
2021
·
IF 3.498
Xu-Ping Jiang,Bang-Zhou Tian,Qiang Sun,Xu-Liang Li,Jie Chen,Jun Tang,Ping Zhang,Lei Yang,Zhi-Gang Chen
As a promising alternative to the toxic PbTe-based thermoelectric materials, eco-friendly SnTe has attracted considerable attention. Here, we use a facile solvothermal method to in-situ synthesize MXene/SnTe nanocomposites. Comprehensive characterization results indicate that the incorporation of two-dimensional MXene in SnTe matrix can suppress Sn vacancies to result in a reduced carrier concentration and induce abundant MXene/SnTe interfaces, which simultaneously optimizes the electrical and thermal transport properties. As a result, with the optimized MXene content, the maximum figure of merit of ∼0.63 at 823 K is obtained in SnTe with 0.6 wt% MXene, which shows a 60% enhancement compared to pristine SnTe. This work explores a new strategy to introduce two-dimensional MXene into SnTe-based materials with improved thermoelectric properties, which can inspire new pathways into designing and synthesizing high-performance thermoelectric materials .
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子
Inorganic Chemistry Frontiers
·
2022
·Vol. 9
·期 21
·5562-5571
·
IF 7.779
Fudong Zhang,Xia Qi,Mingkai He,Fengshan Zheng,Lei Jin,Zhanhui Peng,Xiaolian Chao,Zupei Yang,Di Wu
Previous studies have revealed that both Bi doping and Bi2Te3 alloying are successful strategies to optimize the thermoelectric performance of SnTe; however, detailed and thorough investigations on exactly how they differ in modulating the band structure and microstructure were seldom given. Through a systematic comparison between Bi-doped and Bi2Te3-alloyed SnTe, we find in this work that despite the fact that they both contribute to the valence band convergence of SnTe, Bi2Te3 alloying induces little effect on the hole concentration unlike the typical n-type feature of Bi-doping; moreover, Bi2Te3 alloying tends to produce dense dislocation arrays at micron-scale grain boundaries which differs significantly from the substitutional point defect character upon Bi-doping. It was then found that Bi2Te3 alloying exhibits a relatively higher quality factor (B ∼ μw/κlat) at higher temperatures than Bi-doping. Subsequent Ge-doping in Bi2Te3-alloyed samples results in further valence band convergence and hole concentration optimization and eventually results in a maximum figure of merit ZT of 1.4 at 873 K in the composition of (Sn0.88Ge0.12Te)0.97-(BiTe1.5)0.03.
研究领域:
材料科学
·
热电材料
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2016
·Vol. 4
·期 34
·13171-13175
·
IF 8.262
Zhiwei Zhou,Junyou Yang,Qinghui Jiang,Yubo Luo,Dan Zhang,Yangyang Ren,Xu He,Jiwu Xin
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of states effective mass. The lattice thermal conductivity was also greatly reduced as a result of the wide frequency range of phonon scattering by multiscale architectures derived from Bi doping. A maximum ZT value of c. 1.1 at 873 K was obtained in Sn0.94Bi0.06Te, an enhancement of 165% compared with the undoped sample.
研究领域:
材料科学
·
热电材料研究
✓ 已验证
产品关联
DOI
高影响因子
RARE METALS
·
2021
·Vol. 41
·期 1
·86-95
·
IF 4.003
Tian Bang-Zhou,Jiang Xu-Ping,Chen Jie,Gao Han,Wang Ze-Gao,Tang Jun,Zhou Da-Li,Yang Lei,Chen Zhi-Gang
Abstract Interface engineering has been regarded as an effective strategy to manipulate the thermoelectric performance of materials. Here, we use a facile chemical electroless plating and a spark plasma sintering process to fabricate Ag-plated SnTe bulk. After sintering, a small amount of plated Ag can be doped into SnTe to suppress the Sn vacancies and the others form Ag precipitates with a size distribution from nanoscale to microscale, which introduces Ag/SnTe interfaces to enhance the Seebeck coefficient via energy filtering effect. Simultaneously, these structures result in strong scattering to reach a low lattice thermal conductivity of ~ 0.62 W·m –1 ·K –1 . Consequently, a maximum figure of merit ( zT ) of ~ 0.67 at 823 K is achieved in 2 wt% Ag-plated SnTe, which is ~ 60% higher than that of pristine SnTe. Moreover, the microhardness indentation test results show that the mean microhardness of 2 wt% Ag-plated SnTe is HV 64.26, which is much higher than that of pristine SnTe, indicating that Ag electroless plating can improve the mechanical properties of SnTe. This work has provided a facile and eco-friendly method to realize the interface engineering for manipulating the thermoelectric and mechanical properties of SnTe. Graphical abstract
研究领域:
材料科学
·
热电材料
✓ 已验证
DOI
高影响因子
Advanced Science
·
2020
·Vol. 7
·期 11
·1903493
·
IF 15.84
Sihui Li,Jiwu Xin,Abdul Basit,Qiang Long,Suwei Li,Qinghui Jiang,Yubo Luo,Junyou Yang
Lead-free chalcogenide SnTe has been demonstrated to be an efficient medium temperature thermoelectric (TE) material. However, high intrinsic Sn vacancies as well as high thermal conductivity devalue its performance. Here, β-Zn 4 Sb 3 is incorporated into the SnTe matrix to regulate the thermoelectric performance of SnTe. Sequential in situ reactions take place between the β-Zn 4 Sb 3 additive and SnTe matrix, and an interesting “core–shell” microstructure (Sb@ZnTe) is obtained; the composition of SnTe matrix is also tuned and thus Sn vacancies are compensated effectively. Benefitting from the synergistic effect of the in situ reactions, an ultralow κ lat ≈0.48 W m −1 K −1 at 873 K is obtained and the carrier concentrations and electrical properties are also improved successfully. Finally, a maximum ZT ≈1.32, which increases by ≈220% over the pristine SnTe, is achieved in the SnTe-1.5% β-Zn 4 Sb 3 sample at 873 K. This work provides a new strategy to regulate the TE performance of SnTe and also offers a new insight to other related thermoelectric materials.
研究领域:
材料科学
·
热电材料
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Small
·
2023
·
IF 13.3
Xinlei Li,Shupeng Sun,Nan Wang,Baoyu Huang,Xiaogan Li
Non-invasive breath testing has gained increasing importance for early disease screening, spurring research into cheap sensors for detecting trace biomarkers such as ammonia. However, real-life deployment of ammonia sensors remains hindered by susceptibility to humidity-induced interference. The SnTe/SnSe heterojunction-based chemiresistive-type sensor demonstrates an excellent response/recovery to different concentrations of ammonia from 0.1 to 100 ppm at room temperature. The improved sensing properties of the heterojunctions-based sensors compared to single-phased SnTe or SnSe can be attributed to the stronger NH 3 adsorptions, more Te vacancies, and hydrophobic surface induced by the formed SnTe/SnSe heterojunctions. The sensing mechanisms are investigated in detail by using in situ techniques such as diffuse reflectance Fourier transform infrared spectroscopy (DRIFTS), Kelvin probe, and a.c. impedance spectroscopy together with the Density-Function-Theory calculations. The formed heterojunctions boost the overall charge transfer efficiency between the ammonia and the sensing materials, thus leading to the desirable sensing features as well, with excellent resistance to ambient humidities.
研究领域:
材料科学
·
传感器技术
·
医学检测
✓ 已验证
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Adeel Abbas,Mohammad Nisar,Zhuang Hao Zheng,Fu Li,Bushra Jabar,Guangxing Liang,Ping Fan,Yue-Xing Chen
Recently, rock-salt lead-free chalcogenide SnTe-based thermoelectric (TE) materials have been considered an alternative to PbTe because of the nontoxic properties of Sn as compared to Pb. However, high carrier concentration that originated from intrinsic Sn vacancies and relatively high thermal conductivity of pristine SnTe lead to poor TE efficiency, which makes room for improving its TE properties. In this study, we present that the Na incorporation into the SnTe matrix is helpful for modifying the electronic band structure, optimization of carrier concentration, introducing dislocations, and kink planes; benefiting from these synergistic effects obviates the disadvantages of SnTe and makes a significant improvement in TE performance. We reveal that Na favorably impacts the structure of electronic bands by valence, conduction band engineering, leading to a nice enhancement in the Seebeck coefficient, which exhibits the highest power factor value of 37.93 μWcm–1 K–2 at 898 K, representing the best result for the SnTe material system. Moreover, a broader phonon spectrum is introduced by new phonon-scattering centers, scattered by dislocations and kink planes which suppressed lattice thermal conductivity to 0.57 Wm–1 K–1 at 898 K, which is much lower than that of pristine SnTe. Ultimately, a maximum ZT of 1.26 at 898 K is achieved in the Sn1.03Te + 3% Na sample, which is 97% higher than that of the pristine SnTe, suggesting that SnTe-based materials are a robust candidate for TE applications specifically, an ideal alternative of lead chalcogenides for TE power generation at high temperatures.
研究领域:
材料科学
·
能源工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
·
2017
·Vol. 100
·期 12
·5723-5730
·
IF 2.841
Zhiwei Zhou,Junyou Yang,Qinghui Jiang,Dan Zhang,Jiwu Xin,Xin Li,Yangyang Ren,Xu He
In this work, the thermoelectric properties of SnTe have been regulated synergistically by introduction of n -type ZnO nanoinclusions. On one hand, the excessive holes in SnTe matrix were compensated properly by n -type ZnO, and the Seebeck coefficient has been improved greatly due to the carrier energy filtering effect by a large quantity of ZnO-SnTe hetero-junction interface barriers; On the other hand, the thermal conductivity gets reduced by the enhanced phonon scattering from multiscale hierarchical architectures. Consequently, a maximum ZT of ~0.9 at 873K has been obtained in the 0.8 wt% sample, which enhances by 112% in comparison with the nanoinclusion-free sample.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）