J. Du,S. Lyu,K. Jiang,D. Huang,J. Li,R. Van Deun,D. Poelman,H. Lin
Persistent luminescent materials containing deep-level traps have attracted extensive research interest in the field of optical information storage due to their unique features of long-lasting emission, energy storage, and controllable photon release upon external stimulations. However, the lack of suitable luminescent materials with deep-level traps is still the bottleneck of such an optical storage application. Herein, we report a series of persistent luminescent materials with reddish-orange emissions and controllable photon release upon thermal stimulation. Through substitution of Sn by Si, more and deeper trap levels are achieved in Sr 2 SnO 4 :Sm 3+ ,Si 4+ phosphors. Moreover, both ultraviolet light and high-energy X-ray irradiations can induce reddish-orange emitting persistent luminescence from the as-synthesized samples. Rewritable optical information storage and readout based on photon trapping and de-trapping processes are demonstrated. Optical information can be handily encoded using a commercially available 365 nm light-emitting diode, and decoded upon thermal stimulation. The Sr 2 SnO 4 :Sm 3+ ,Si 4+ phosphors as presented in this work show a great promise for rewritable optical data storage and information encryption.
Hua Fang,Gaojian Qiu,Xusheng Wang,Yanxia Li,Xi Yao
A series of Sr 1 . 9 6 Sn 1 − x Si x O 4 :0.04Sm 3 + ( x = 0 , 0.1, 0.15, 0.2, 0.3, 0.4) were synthesized from solid-state reaction. The mechanoluminescence (ML) performance of Sr 1 . 9 6 SnO 4 :0.04Sm 3 + was greatly enhanced by partial Si 4 + substitution for Sn 4 + , and the sample of Sr 1 . 9 6 Sn 0 . 8 Si 0 . 2 O 4 :0.04Sm 3 + showed weaker afterglow and twice stronger ML intensity than that in Sr 1 . 9 6 SnO 4 :0.04Sm 3 + . The stress response of Sr 1 . 9 6 Sn 0 . 8 Si 0 . 2 O 4 :0.04Sm 3 + ranged from 250 to 1200 N, and its linearity was greatly restored. Particularly, it was very sensitive in the minimal stress response range. These properties of no load threshold for stress sensing and weak afterglow make Sr 1 . 9 6 Sn 0 . 8 Si 0 . 2 O 4 :0.04Sm 3 + superior to other excellent ML materials. The introduction of Si 4 + caused lattice distortion and promoted defect formation in the system. The trap level energy greatly increased and the trap depth changed, which enhanced the trap ability and therefore improved effectively the ML properties.
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