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Sr2SnO4
JOURNAL OF LUMINESCENCE · 2022 · IF 4.171

Insight into luminescence properties of Li+ co-doped Sr2SnO4:Eu3+ phosphors by co-precipitation assisted hydrothermal synthesis

Qingling Zeng,Wenxiang He,Ning Zhang,Dongcai Guo

Sr 2 SnO 4 :Eu 3+ phosphors were prepared by a co-precipitation combined with hydrothermal method for the first time, and Li + was introduced to improve its luminescence performance. X-ray diffraction analysis determined that Sr 2 SnO 4 :Eu 3+ , Li + phosphors were successfully synthesized. The effects and mechanisms of Li + doping on the luminescence properties of Sr 2 SnO 4 :Eu 3+ were specifically discussed. At 260 nm excitation, the fluorescence spectra of the products were dominated by the 5 D 0 - 7 F 1 characteristic emission peak of Eu 3+ at 598 nm, with the electric dipole transition 5 D 0 - 7 F 2 being distinctly lower than the magnetic dipole transition 5 D 0 - 7 F 1 , indicating that Eu 3+ selectively replaced the highly symmetrical defective sites of Sn 4+ . The luminous intensity and decay lifetime were significantly enhanced through co-doping Li + , which played an essential role as a charge compensator. The optimum doping concentration of Li + was 7%. Finally, the color purity of Sr 2 SnO 4 :Eu 3+ , Li + reached 99.9%, suggesting that it could be developed as a potential orange-emitting material for solid-state lighting.

CAS / MDL: 7790-69-4
研究领域: 材料科学 · 光学
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Materials Today Chemistry · 2022 · IF 7.613

Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage

J. Du,S. Lyu,K. Jiang,D. Huang,J. Li,R. Van Deun,D. Poelman,H. Lin

Persistent luminescent materials containing deep-level traps have attracted extensive research interest in the field of optical information storage due to their unique features of long-lasting emission, energy storage, and controllable photon release upon external stimulations. However, the lack of suitable luminescent materials with deep-level traps is still the bottleneck of such an optical storage application. Herein, we report a series of persistent luminescent materials with reddish-orange emissions and controllable photon release upon thermal stimulation. Through substitution of Sn by Si, more and deeper trap levels are achieved in Sr 2 SnO 4 :Sm 3+ ,Si 4+ phosphors. Moreover, both ultraviolet light and high-energy X-ray irradiations can induce reddish-orange emitting persistent luminescence from the as-synthesized samples. Rewritable optical information storage and readout based on photon trapping and de-trapping processes are demonstrated. Optical information can be handily encoded using a commercially available 365 nm light-emitting diode, and decoded upon thermal stimulation. The Sr 2 SnO 4 :Sm 3+ ,Si 4+ phosphors as presented in this work show a great promise for rewritable optical data storage and information encryption.

研究领域: 材料科学 · 光功能材料 · 固态化学 · 信息存储技术 · 发光物理
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Journal of Advanced Dielectrics · 2018 · IF 0

Trap modification and mechanoluminescence improvement by Si substitution for Sn in Sr2SnO4:Sm3+ ceramics

Hua Fang,Gaojian Qiu,Xusheng Wang,Yanxia Li,Xi Yao

A series of Sr 1 . 9 6 Sn 1 − x Si x O 4 :0.04Sm 3 + ( x = 0 , 0.1, 0.15, 0.2, 0.3, 0.4) were synthesized from solid-state reaction. The mechanoluminescence (ML) performance of Sr 1 . 9 6 SnO 4 :0.04Sm 3 + was greatly enhanced by partial Si 4 + substitution for Sn 4 + , and the sample of Sr 1 . 9 6 Sn 0 . 8 Si 0 . 2 O 4 :0.04Sm 3 + showed weaker afterglow and twice stronger ML intensity than that in Sr 1 . 9 6 SnO 4 :0.04Sm 3 + . The stress response of Sr 1 . 9 6 Sn 0 . 8 Si 0 . 2 O 4 :0.04Sm 3 + ranged from 250 to 1200 N, and its linearity was greatly restored. Particularly, it was very sensitive in the minimal stress response range. These properties of no load threshold for stress sensing and weak afterglow make Sr 1 . 9 6 Sn 0 . 8 Si 0 . 2 O 4 :0.04Sm 3 + superior to other excellent ML materials. The introduction of Si 4 + caused lattice distortion and promoted defect formation in the system. The trap level energy greatly increased and the trap depth changed, which enhanced the trap ability and therefore improved effectively the ML properties.

研究领域: 材料科学 · 光学
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Journal of Materials Chemistry C · 2019 ·Vol. 7 ·期 27 ·8303-8309 · IF 6.641

Visible to near-infrared persistent luminescence from Tm3+-doped two-dimensional layered perovskite Sr2SnO4

Puxian Xiong,Mingying Peng

Persistent luminescent (PPL) materials have attracted wide attention in various fields, such as bio-imaging, optical information memory, and emergency lighting and signs. Single ion doped PPL materials with stable emission are ideal for practical applications, but a PPL material that covers the entire wavelength range, from visible to near infrared, is difficult to achieve in a single-ion doped material. Here, we present a novel PPL phosphor whose emission ranges from 440 to 850 nm, from a single Tm3+ ion doped Sr2SnO4. Persistent bluish-green light from the optimally alloyed sample (Sr1.98SnO4:0.02Tm3+) can be observed by the naked eye after 30 min, which may be due to the interactions between electron traps from Tm3+ doping and the host deeper than 0.71 eV, as indicated by thermoluminescence (TL) analysis. The fabricated intelligent PPL, using two-dimensional code technology with a write-in and read-out property, was achieved, while the performance of NIR PPL needs to be improved in the future. We anticipate that these results will stimulate research on single emitter-based PPL emission phosphors and diodes for next-generation lighting and anticounterfeiting technology.

研究领域: 材料科学 · 光学材料 · 发光荧光粉 · 光子学 · 防伪技术
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