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SrGa2S4:Eu2
JOURNAL OF RARE EARTHS · 2025 · IF 7.2

Oxygen-mediated structural optimization in SrGa2S4:Eu2+: a dual enhancement of thermal stability and luminescent intensity

Jiaxuan Zhang,Guantong Chen,Yuanhong Liu,Ronghui Liu,Longqian Ouyang,Wei Xiao

The Eu 2+ -activated sulfide green phosphor SrGa 2 S 4 :Eu 2+ has attracted significant attention for its narrow emission band, high color purity, and strong emission intensity, making it a promising candidate to replace β -SiAlON:Eu 2+ in white light-emitting diode (LED) backlights for ultra-wide-color-gamut liquid crystal displays. However, the practical application of SrGa 2 S 4 :Eu 2+ is limited by its poor thermal stability, which results in diminished luminescence at high temperatures. This study proposes a host structure optimization strategy through partial O-S substitution to enhance the thermal stability. Density functional theory (DFT) analysis reveals that oxygen doping stabilizes the Eu 2+ centers and increases the bandgap of the SrGa 2 S 4 host. A series of Sr 1– x Ga 2 S 4– y O y :Eu 2+ phosphors were synthesized via a high-temperature solid-state reaction method. The effects of O-S substitution on crystal structure and luminescent properties were systematically investigated through fluorescence decay curves, diffuse reflectance spectra, and polyhedral distortion analysis. Structural refinement demonstrates that O doping increases the distortion of Ga-S 4 tetrahedra, amplifying the repulsion between Eu 2+ luminescent centers and anions, thereby widening the bandgap and improving thermal stability. With the increasing of O content, the thermal stability progressively enhances. The luminescence intensity of Sr 0.95 Ga 2 S 3.5 O 0.5 :0.05Eu 2+ at 150 °C improves from 55.4% to 76.5% compared to Sr 0.95 Ga 2 S 4 :0.05Eu 2+ . The optimized phosphor exhibits a green emission peak at 535 nm under 460 nm excitation, with a full width at half maximum (FWHM) of 48 nm, and 140% of the room-temperature emission intensity of commercial β -SiAlON:Eu 2+ . This work provides a feasible new strategy to enhance the thermal stability of sulfide-based green phosphors for advanced optoelectronic applications.

研究领域: 材料科学 · 光学
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Laser & Photonics Reviews · 2026 · IF 9.7

Enhancing Quantum Efficiency of Narrow Band Green Emitting Phosphor SrGa2S4:Eu2+ via Solid Solution Engineering for Wide Color Gamut Display

Chen Bai,Bo Yang,Deyin Wang,Yuhua Wang

The pursuit of high-performance narrow-band green phosphors is crucial for wide color gamut displays including liquid crystal displays and laser-driven displays. SrGa 2 S 4 :Eu 2+ is a well-established narrow-band green-emitting phosphor, but its low external quantum efficiency (EQE) limits its practical application. Herein, Mg 2+ doping strategy is employed to enhance the EQE of SrGa 2 S 4 :Eu 2+ , significantly improving in its EQE from 33.1% to 53.1%. This improvement is attributed to enhanced lattice rigidity induced by Mg 2+ doping, which suppresses lattice vibrations, thereby reducing energy loss via phonon coupling and increasing the probability of radiative emission. This effect is corroborated by Raman spectroscopy, which reveals a shift in vibrational modes consistent with increased rigidity. To evaluate its practical applicability, we integrated the newly obtained narrow green-emitting phosphor into liquid crystal displays (LCDs) and laser-driven projection systems. Prototype tests demonstrate that displays utilizing (Sr,Mg)Ga 2 S 4 :Eu 2+ deliver significantly more vivid and color-saturated images compared to those employing the conventional broad-spectrum yellow-emitting Y 3 Al 5 O 12 :Ce 3+ (YAG:Ce 3+ ) phosphor. These results fully underscore the great potential of the modified phosphor for wide-color-gamut display applications.

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