Deng Yafeng,Ma Zhanhong,Ren Fengzhang,Wang Guangxin
In spite of the TiO 2 compact layer (TCL) being widely used, it still needs more study. This paper took Ni-doped TCLs as the research target, using an innovative two-step method perfectly prepared Ni-doped TCLs with different thicknesses. And then on the basis of Ni-doped TCLs, the TiO 2 nanorod array (TNA) films were successfully prepared. The effects of Ni-doped TCLs with different thicknesses on the morphology, structure, and photoelectric performance of TNA films were investigated. The results indicated that Ni-doped TCLs with appropriate thickness can significantly improve performance of TNA films and obtain satisfactory PCE stability with time. Compared with the TNA films based on Ni:TCL5, Ni:TCL10, and Ni:TCL30, the TNA film with Ni:TCL20 exhibited better comprehensive photoelectric performance, the DSSCs based on this TNA film achieved the highest J sc (10.191 mA cm −2 ), V oc (0.574 V), PCE (4.42%), and the most excellent PCE stability with time.
With the increasing severity in the service environment of secondary refining furnaces, traditional refractories cannot meet the high requirements. MgO-based fired refractories are subject to the thermal shock effect and slag penetration which are detrimental to their performance. In this study, low-carbon MgO-based refractories are reinforced by an in-situ MgAl 2 O 4 (MA)-TiO 2 dense layer with the addition of low-cost self-prepared titanium carbonitride [Ti(C, N)]. The influence of the addition of as-prepared Ti(C, N) on the properties of low-carbon MgO-based refractories was investigated. The reinforced refractories had no cracks after 190 thermal shock cycles, demonstrating the highest hot modulus of rupture (HMOR) with excellent thermal shock resistance (TSR). After 2.5 h of rotary immersion in a steel slag, the corrosion depth of the composites was only 26.3% of that of commercial MgO-CaO refractories. Based on the thermodynamic analysis, the Ti(C, N) reinforcement mechanism for the low-carbon MgO-based refractories was studied. A MA-TiO 2 dense layer formed during the oxidation process of the composites which enhanced the oxidation resistance . The volume expansion caused by the partial oxidation of Ti(C, N) prevents the penetration of the molten slag to refractories and Ti(C, N) powders forming a protective layer to further effectively protect the composites from slag corrosion owing to its high surface area. In addition, 3CaO·2TiO 2 formed by the reaction between the steel slag and Ti(C, N) further increased the slag corrosion resistance (SCR) of the composites. This research offers a new idea for the material selection for secondary refining furnaces to achieve a green and effective steel-making production route and enriches the understanding of the phase behaviour in the Mg-Al-Ti-C-O-N system under high temperatures.
To reveal the ways and causes of conversion efficiency enhancement for quantum dot-sensitized solar cells (QDSSCs), chalcopyrite structure CuInS 2 quantum dots (QDs) was synthesized in oil phase by the high temperature hot injection method. Then, QDs were transferred from oil phase to water phase with 3-mercaptopropionic acid as a ligand exchange reagent and loaded inducer of QDs. 3-mercaptopropionic acid coated QDs in water phase were sensitized on TiO 2 nanocrystalline thin films to fabricate QDSSCs. The sensitization time of QDs and pH value in QDs solution are two important factors to affect the loading amounts of QDs and performance of the final assembled QDSSCs. Long-time sensitization of QDs on the TiO 2 porous thin film will cause QDs to agglomerate and stack on the film. The pH of QDs aqueous solution influences the stable existence in solution of QDs and adsorption on the surface of TiO 2 . By balancing the influence of the above two factors, the optimal sensitization condition of CuInS 2 QDs is adsorption in pH = 11 QDs solution for 2 h. In addition, the interface between QD-sensitized TiO 2 porous thin film and FTO is another factor to affect the photoelectric conversion efficiency of QDSSCs. By adding Zn-doped TiO 2 compact layer with high conductivity and electron mobility on QDSSCs to modify this interface, the photoelectric conversion efficiency of QDSSCs was further increased by 66.4 %.
危险品化学品经营许可证（带存储）