Yinzhu Jiang,Hao Wang,Shiya Wen,Huanjun Chen,Shaozhi Deng
Recently, resonance coupling between plasmonic nanocavity and two-dimensional semiconductors has attracted considerable attention. Most of the previous studies have focused on demonstrating this effect with light scattering or reflection spectroscopy, while the photoluminescence (PL) spectrum can help ascertain the underlying physics. Here, we report on the light-emitting characteristics of a monolayer WS2 flake coupled with a plasmonic gold nanorod. We construct a heterostructure by integrating an individual gold nanorod on top of a small piece of monolayer WS2, where the WS2 area is determined by the projected area of the nanorod. In such a heterostructure, the background PL from the uncoupled WS2 can be suppressed, which allows us to characterize the resonance coupling effect using correlated single-particle dark-field (DF) scattering and PL spectroscopies. Distinct mode splitting and anticrossing dispersion are observed in the scattering spectra, which originate from the resonance coupling between the excitons in the WS2 and plasmon resonance in the gold nanorod. In addition, a 1187-fold enhancement is obtained for the light emitted from the heterostructure relative to that of the pristine monolayer WS2. The emission spectra are broadened with mode-splitting features at room temperature, which can be further decomposed into two resonance modes using a coupled mode analysis. Moreover, two PL modes are polarized along the longitudinal axis of the gold nanorod. These findings show the potential of the designed individual gold nanorod–monolayer WS2 heterostructure as a platform for studying the resonance coupling effect between plasmon resonance and two-dimensional excitons.
Xinli Ma,Rongjie Zhang,Chunhua An,Sen Wu,Xiaodong Hu,Jing Liu
Transition metal dichalcogenides (TMDCs) belong to a subgroup of two-dimensional (2D) materials which usually possess thickness-dependent band structures and semiconducting properties. Therefore, for TMDCs to be widely used in electronic and optoelectronic applications, two critical issues need to be addressed, which are thickness-controllable fabrication and doping modulation of TMDCs. In this work, we successfully obtained monolayer WS2 and achieved its efficient doping by chemical vapor deposition and chemical doping, respectively. The n- and p-type dopings of the monolayer WS2 were achieved by drop coating electron donor and acceptor solutions of triphenylphosphine (PPh3) and gold chloride (AuCl3), respectively, on the surface, which donates and captures electrons to/from the WS2 surface through charge transfer, respectively. Both doping effects were investigated in terms of the electrical properties of the fabricated field effect transistors. After chemical doping, the calculated mobility and density of electrons/holes are around 74.6/39.5 cm2·V−1·s−1 and 1.0 × 1012/4.2 × 1011 cm−2, respectively. Moreover, we fabricated a lateral WS2 p–n homojunction consisting of non-doped n-type and p-doped p-type regions, which showed great potential for photodetection with a response time of 1.5 s and responsivity of 5.8 A/W at VG = 0 V and VD = 1 V under 532 nm light illumination.
Li Zhan,Xudong Pei,Jiachen Tang,Shuaixing Li,Shuo Li,Yuan Li,Lintao Li,Changjin Wan,Yu Deng,Yi Shi,Yufeng Hao,Songlin Li
2D transition-metal dichalcogenide (TMDC) semiconductors represent the most promising channel materials for post-silicon microelectronics due to their unique structure and electronic properties. However, it remains challenging to synthesize wide-bandgap TMDCs monolayers featuring large areas and high performance simultaneously. Herein, highly oriented WS 2 monolayers are reproducibly synthesized through a templated growth strategy on vicinal C/A-plane sapphire wafers. Various spectroscopic characterizations confirm the high crystallographic orientation and uniformity across the entire wafers. Electronic measurements for samples transferred onto SiO 2 /Si substrates reveal high average field-effect mobilities of 62 and 180 cm 2 V −1 s −1 at room temperature and 8 K, respectively. On hexagonal boron nitride substrates, these mobilities increase to 94 and 473 cm 2 V −1 s −1 , respectively. A record high saturation current density of 675 µA µm −1 is observed, outperforming the index required for high-density integration circuits in IRDS 2025. This work paves the way for the application of wide-bandgap TMDC monolayers in post-silicon electronics.
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