Phase-engineered synthesis of atomically thin te single crystals with high on-state currents
Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α -Te nanosheets and β -Te nanoribbons (from monolayer to tens of μm) on WS 2 substrates. As the thickness decreases, the α -Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β -Te nanoribbons remain p-type semiconductors with an ON-state current density (I ON ) up to ~ 1527 μA μm −1 and a mobility as high as ~ 690.7 cm 2 V −1 s −1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β -Te nanoribbon transistors exhibit remarkable electrical properties (I ON = ~ 1270 μA μm −1 and ON-state resistance down to 0.63 kΩ μm) at V ds = 1 V.
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