Preparation of Zn1-xCexO resistive switching film on SS304 and its corrosion resistance mechanism in NaCl solution
The corrosion-resistant behavior of the films was investigated in conjunction with the principle of resistive switching, and the films were subjected to continuous repair by modulating the oxygen vacancies. Zn 1- x Ce x O resistive switching film was prepared on SS304 surface by one-step hydrothermal method combined with the following heat treatment. The surface morphology, crystal structure, composition, oxygen vacancy concentration and semiconductor type of Zn 1- x Ce x O film were determined. The corrosion resistance and resistive switching properties of Zn 1- x Ce x O films were measured by electrochemical tests, immersion experiment and resistive switching experiment. The oxygen vacancy formation energy, surface adsorption energy and diffusion energy barrier energy of Zn 1- x Ce x O film were calculated by density functional theory (DFT). The experimental results show that with the increasing of Ce doping concentration, the nano-flowers on the surface of Zn 1- x Ce x O film become sparse, and the lattice constants a and c increase, the oxygen vacancy concentration of the film gradually increases, while the corrosion resistance of Zn 1- x Ce x O film decreases. The corrosion resistance of Zn 0.98 C e0.02 O film is the best (99.36%). During resistive switching process, the polarization treatment will promote the conversion of Ce 3+ to Ce 4+ in film, reduce the formation energy and diffusion barrier of oxygen vacancies, and thus promote the formation and migration of oxygen vacancies in film and then convert the film into a low resistance state. Zn 1- x Ce x O films can stably switching between high and low resistance states, maintaining excellent corrosion resistance, which is of great significance for expanding the application of resistance switching principles in the field of corrosion protection.
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