Advanced Optical Materials
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2017
·Vol. 5
·期 20
·1700377
·
IF 6.875
Hua Wu,Yu Zhang,Xiaoyu Zhang,Min Lu,Chun Sun,Tieqiang Zhang,William W. Yu
Perovskite has been considered to be a promising optoelectronic material due to its superior properties, yet, it are strongly sensitive to oxygen and water, especially when applied in devices. Here, a highly efficient and stable light-emitting device (LED) is reported by applying solution-processed Mg-doped ZnO (MZO) nanocrystals (NCs) as an interfacial layer. The effect of Mg doping on the optical and electronic properties of NCs is investigated. This study demonstrates that the air stability of perovskite NC film is significantly enhanced because of the decreased oxygen vacancy surface sites of MZO NCs. Incorporation of a MZO layer with favorable electronic energy level to form a suitable band alignment promotes electron injection and enhances the LED performance. Compared to the device without MZO, the LED shows 3059 cd m −2 of luminance, with 1.9 times enhanced current efficiency and 2 times increased external quantum efficiency. In addition, the device with MZO also exhibits better stability. This research provides a potential strategy for realizing stable and efficient perovskite LEDs.
研究领域:
材料科学
·
光电子学
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DOI
高影响因子
Small
·
2025
·
IF 12.1
Zilong Guo,Hao Kan,Jiaqi Zhang,Yang Li
Retina-inspired optoelectronic neuromorphic devices integrating optical sensing and computation are the key components in realizing neuromorphic visual computing. In particular, UV-responsive optoelectronic synaptic devices hold significant value for advanced neuromorphic vision systems, as they can expand human visual perception. Herein, we demonstrate a UV-responsive optoelectronic synaptic device based on ZnMgO quantum dots (QDs) designed for in-sensor computing in neuromorphic vision applications. The device demonstrates voltage-driven short-term and long-term synaptic plasticity, as well as multiple photoinduced synaptic functions. Based on this device, an in-sensor image-blending encryption method has been designed, which can effectively reduce the risk of data leakage during transmission. Furthermore, an in-sensor reservoir computing (RC) system with image processing functions is constructed, which integrates a photonic reservoir layer (PRL) for image preprocessing and a multilayer perceptron (MLP) capable of image recognition. The system achieves 98.6% accuracy in recognizing Fashion-MNIST images and maintains 83% accuracy under 60% random noise, showcasing its robustness. This work introduces a novel approach for developing UV-responsive optoelectronic synaptic devices equipped with dual-mode modulation of both electrical and optical signals, offering new perspectives and solutions for integrated applications in neuromorphic vision systems.
研究领域:
神经形态计算
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材料科学
·
计算机视觉
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DOI
PubMed
高影响因子
Advanced Optical Materials
·
2025
·
IF 7.2
Yanfang Ren,Yunqi Wang,Yan Fang,Xiaohong Jiang,Meng Li,Ke Cheng,Zuliang Du
The Zinc-Magnesium oxide (ZnMgO, ZMO) nanoparticles (NPs) are well-documented as electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs). However, ZnO/ZMO nanoparticles prepared via low-temperature sol–gel methods with small grain size and abundant surface defects always suffer from structural and electrical drift, causing lifespan reduction and performance fluctuations of devices. Herein, the benzyl phosphate (BPA) and its derivatives are introduced onto the surface of ZMO NPs as armor layer to stabilize and regulate their properties as ETLs. The prepared ZMO capped with BPA NPs have fine structural and electrical properties stability, which have simultaneously achieves effective defect passivation, enhances nanoparticle dispersibility and stability, and precisely tunes energy levels to balance charge injection. By benefiting from the robust ZMO ETLs, the overall performance of the QLED devices has been greatly boosted. The resulting external quantum efficiency (EQE) of green QLEDs is increased from 20.8% to 29.9%, showing the best performance among currently reported ZMO-based green QLEDs, and over 3.3-fold improvement in T 95 operation lifetime at 1000 cd m − 2 . The relevant physical mechanism has also been investigated. Current work will inspire the exploration of ZMO decorating engineering to construct solution-processed QLEDs device with higher performance.
研究领域:
材料科学
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纳米技术
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光电子学
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半导体器件
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表面化学
·
器件物理
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DOI
高影响因子
ADVANCED MATERIALS
·
2026
·
IF 29.1
Guan-Jie Ding,Xiaolin Tai,Bo Li,Yong-Hui Song,Ya-Lan Hu,Lin-Lin Zeng,Zhen-Yu Ma,Sami Ur Rahman,Yue Lin,Fengjia Fan,Hong-Bin Yao
Quasi-two-dimensional (quasi-2D) perovskites, featuring a large-cation-intercalated quantum-well structure, are efficient emitters for pure-red perovskite light-emitting diodes (PeLEDs); however, their electroluminescence is limited by poor carrier injection because all current quasi-2D emitters are horizontally aligned on low-mobility organic electron transport layers. Therefore, a PeLED with a quasi-2D perovskite vertically stacked on a high-mobility inorganic electron-transport layer is highly anticipated but has yet to be achieved. Here, we introduce branched guanidinium cations (GA + ) and non-protonic phosphonium, (2-aminoethyl) triphenyl- cations (PAT + ) to direct the vertical growth of quasi-2D emitters on a high-conductivity electron-transport layer, ZnMgO, enabling high-performance pure-red PeLEDs that exhibit a maximum luminance of 65 875 cd m −2 and an external quantum efficiency of 14.63% even at a high brightness of 49 080 cd m −2 . Impressively, the low driving voltage, enabled by efficient carrier transport, also yields an operational half-lifetime of 5528 h at an initial luminance of 100 cd m −2 , which represents the most stable pure-red PeLED reported to date.
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DOI
高影响因子
Small
·
2026
·
IF 12.1
Rui Zhu,Jun Wang,Hui Li,Ruyi Luo,Junsheng Tan,Ning Guo,Jianpeng Ma,Wen Wen,Yuchen Wu,Lei Jiang,Jiangang Feng
Cadmium-free indium phosphide (InP) quantum dots (QDs) are promising emitters for environmentally benign next-generation light-emitting diodes (LEDs), yet their application is hindered by poor operational stability. This limitation arises from electron trapping and exciton quenching at the InP/ZnMgO interface, where delocalized electrons from InP QDs are readily captured by oxygen vacancies (O V ) in ZnMgO. Here, we demonstrate highly stable InP-based QD-LEDs by rationally passivating ZnMgO with organic fluoride ions (F − ). The strong binding affinity of F − effectively passivates O V sites and suppresses ion migration under electrical injections, thereby lowering defect density and mitigating nonradiative recombination at the interface. As a result, we achieve red InP QD-LEDs with a peak external quantum efficiency (EQE) of 25.35% and a maximum luminance of 137 464 cd m −2 . Remarkably, the T 95 operational lifetime at 1000 cd m −2 extends to 1504 h. Furthermore, InP QDs exhibit excellent compatibility with the micro-LED configuration, maintaining an EQE of 23.29% at a micropixel size of 2 µm. These results highlight a viable pathway toward efficient, stable, and environmentally benign InP-based micro-LEDs for next-generation near-eye displays.
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PubMed
高影响因子
Journal of Physical Chemistry C
·
2020
·
IF 4.189
Lishuang Wang,Jie Lin,Xingyuan Liu,Sheng Cao,Yunjun Wang,Jialong Zhao,Bingsuo Zou
Because of the wide emission spectrum tunability that ranges from the visible region to the near-infrared, InP-based colloidal quantum dots (QDs) show great promise for use in the next-generation full-color displays and solid-state lighting. The performance-improved InP QD-based light-emitting devices (QLEDs) were fabricated by using Mg-doped ZnO nanoparticles (ZnMgO NPs) as an interlayer between the ZnO electron transport layer and active InP QD layer. It is found that ZnMgO NPs can reduce electron injection and suppress exciton quenching, which are attributed to the improvement of charge balance in the devices. We successfully demonstrated higher maximum current efficiencies of 5.46 and 5.91 cd/A than the references (2.31 and 2.36 cd/A) without the ZnMgO NP layer in highly efficient red and green QLEDs, respectively. These results signify an effective approach to improve heavy-metal-free QLEDs for commercial applications.
研究领域:
材料科学
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光电技术
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DOI
高影响因子
IEEE TRANSACTIONS ON ELECTRON DEVICES
·
2026
·
IF 3.2
Zilong Guo,Zepeng Li,Qi Liu,Chunwei Zhang,Jiaqi Zhang,Hao Kan,Yang Li
In the fields of industrial manufacturing, biomedical diagnostics, and environmental monitoring, computing systems with von Neumann architecture suffer from inefficiencies due to the separation of UV sensing, memory, and processing, leading to increased complexity and hardware overhead. In-sensor computing utilizing UV-responsive optoelectronic neuromorphic devices offers a promising alternative by bypassing these limitations for efficient, low-power UV information processing. Here, we present a UV-responsive optoelectronic synapse based on a GaO x /ZnMgO quantum dots (QDs) heterojunction. This device selectively detects UV light and intrinsically suppresses noise, enabling integrated clear perception and fast computation. Various biological synaptic behaviors are demonstrated on the device under 300 nm UV illumination, including short-term memory (STM) to long-term memory (LTM) transition, learning–forgetting–relearning cycles, and dark adaptation behaviors. Leveraging synaptic features, a UV-driven neuromorphic vision system built from the device achieved 97% recognition accuracy on handwritten digits even in the presence of RGB noise. These results highlight the potential of GaO x /ZnMgO QDs heterojunction synapses for robust, noise-resilient in-sensor computing and high-fidelity UV image processing.
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DOI
高影响因子
ACS Nano
·
2024
·
IF 15.8
Qiaopeng Cui,Dingshuo Zhang,Yun Gao,Chao Fan,Qiuting Cai,Hongjin Li,Xiaohui Wu,Meiyi Zhu,Junjie Si,Xingliang Dai,Haiping He,Zhizhen Ye
Controlling interfacial reactions is critical for zinc oxide (ZnO)-based inverted perovskite light-emitting diodes (PeLEDs), boosting the external quantum efficiency (EQE) of the near-infrared device to above 20%. However, violent interfacial reactions between the bromine-based perovskites and ZnO-based films severely limit the performance of inverted green PeLEDs, whose efficiency and stability lag far behind those of their near-infrared counterparts. Here, a controllable interfacial amidation between the bromine-based perovskites and magnesium-doped ZnO (ZnMgO) film utilizing caprylyl sulfobetaine (SFB) is realized. The SFB molecules strongly interact with formamidinium bromide, decelerating the amidation reaction between formamidinium and carboxylate groups on the ZnMgO film, thus regulating the crystallization of FAPbBr3. Combined with the passivation of benzylamine, a FAPbBr3 bulk film directly deposited on a ZnMgO substrate with single-crystal characteristics is obtained, exhibiting a high photoluminescence quantum yield of above 80%. The resultant PeLEDs demonstrate a peak EQE of exceeding 20% at a high luminance of 120,000 cd m–2 and a half lifetime of 26 min at 11,000 cd m–2, representing the state-of-the-art inverted green electroluminescence. This work resolves the crucial issues of violent interfacial reactions and provides a strategy toward inverted green PeLEDs with outstanding performance.
研究领域:
材料科学
·
光电学
·
化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
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