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JOURNAL OF ALLOYS AND COMPOUNDS · 2020 · IF 4.65

Low-temperature preparation achieving 10.95%-efficiency of hole-free and carbon-based all-inorganic CsPbI3 perovskite solar cells

Junsen Zhang,Cheng Wang,Hao Fu,Li Gong,Haiping He,Zhishan Fang,Conghua Zhou,Jianlin Chen,Zisheng Chao,Jincheng Fan

In this paper, hole-free, carbon-based all-inorganic CsPbI 3 perovskite solar cells (PSCs) with the structure of F-doped SnO 2 (FTO)/ZnO/CsPbI 3 /C are fabricated at a low temperature for the first time. Excess CsBr is added into CsPbI 3 precursor solution to obtain stable black phase CsPbI 3 at a low temperature (120 °C). ZnO is prepared by a spin-coating method at 120 °C. And then the C electrode is prepared by a doctor-blade method at 120 °C. The effect of different layers of ZnO on the performance of solar cells is investigated. The champion power conversion efficiency (PCE) of the solar cell based on 3 layers of ZnO is 10.95%, with a short-circuit current ( J SC ) of 17.66 mA/cm 2 , an open-circuit voltage ( V OC ) of 0.91 V and a fill factor ( FF ) of 68%, which is the best performance for hole-free, carbon-based all-inorganic CsPbI 3 PSCs fabricated at a low temperature, compared with the other reported results. The encapsulated device remained 91% of the initial PCE after being stored in a glove box for 5 months. For further application in flexible solar cells, the solar cells with the structure of PET/Sn-doped In 2 O 3 (ITO)/ZnO/CsPbI 3 /C are fabricated under the best parameter conditions and the PCE of 8.70% is obtained.

研究领域: 材料科学 · 能源技术 · 光伏器件
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APPLIED SURFACE SCIENCE · 2015 · IF 2.711

Two-step synthesis of highly emissive C/ZnO hybridized quantum dots with a broad visible photoluminescence

Liangjie He,Shiliang Mei,Qiuhang Chen,Wanlu Zhang,Jie Zhang,Jiatao Zhu,Guoping Chen,Ruiqian Guo

In situ growth of ZnO layer on the surface of carbon dots was realized via a two-step method, which resulted in an enhancement of the broad visible emission with a high quantum yield. Influence of the refluxing time, the temperature and the oleylamine/octadecene ratio was investigated to address the key factors on the preparation of the carbon dots. Under the optimal conditions, the carbon dots with an average diameter of 3.4   ±   0.4   nm and a photoluminescence quantum yield of 29.3% were achieved. Remarkable improvements of photoluminescence were achieved by the hybridization of the ZnO layer, which can eliminate the surface-trap from the C cores and form the new centers of emission. The synergistic effect arising from the C/ZnO hybridized structure obviously broadened the visible emission and enhanced their photoluminescence quantum yield from 29.3% to 47.3%. The as-prepared highly emissive quantum dots exhibited a broad and stable emission with the Commission Internationaled ‘E’ clairage chromaticity coordinate of (0.23, 0.34), which could offer a promising solution for the future-generation white light emitting diodes.

研究领域: 材料科学 · 光学
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APPLIED OPTICS · 2020 ·Vol. 59 ·期 28 ·9042-9050 · IF 1.961

Strong enhanced efficiency of natural alginate for polymer solar cells through modification of the ZnO cathode buffer layer

Xiaolin Zhang,Wenfei Shen,Fanchen Bu,Yao Wang,Xiaoshuang Yu,Wenna Zhang,Jiuxing Wang,Laurence A. Belfiore,Jianguo Tang

Sodium alginate (SA), as a natural marine biopolymer, possesses many merits such as super-easy accessibility from the ocean, low cost, nontoxicity, and no synthesis for practical application. For the chemical structure, SA has enough lone electron pairs of oxygen atoms in the backbone and short branched chains, which is expected to passivate oxygen vacancy on the surface of the ZnO cathode buffer layer to improve the photovoltaic performance. Herein, it was applied to modify the surface trap of the ZnO layer in fullerene and non-fullerene polymer solar cells (PSCs). The defects were successfully reduced, and the trap-assisted recombination decreased. In a $\text{PTB7-Th}:{{\rm PC}_{71}}{\rm BM}$ system, power conversion efficiency (PCE) was improved from 8.06% to 9.36%. In the PM6:IT-4F system, PCE was enhanced from 12.13% to 13.08%. The addition of SA did not destroy the stability of the device. Overall, this work demonstrates the potential for preparing devices with long-time stability and industrial manufacture of PSCs by using biological materials in the future.© 2020 Optical Society of America

研究领域: 材料科学 · 可再生能源 · 光电化学
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ORGANIC ELECTRONICS · 2019 · IF 3.495

Synthesis of amphiphilic triblock fullerene derivatives and their solvent induced self assembly in organic solar cells

Jikang Liu,Junli Li,Xiangfu Liu,Zheling Zhang,Jian Zhang,Guoli Tu

Two A-B-C type amphiphilic triblock fullerene derivatives (C 60 -PEHBS and C 60 -2EHTPB) were synthesized and applied to modify zinc oxide (ZnO) layer in inverted organic solar cells (OSCs). These two fullerene derivatives are typical hydrophilic-amphiphilic-hydrophobic triblock macromolecules with hydrophobic fullerene block, amphiphilic fluorene block and hydrophilic fluorene block. The amphiphilic fluorene contains 1,2-diethoxyethane (-C 6 H 14 O 2 ) on the side chains. And the hydrophilic fluorene blocks contain potassium butane-1-sulfonate (-C 4 H 9 SO 3 K) or N,N,N-trimethylpropan-1-aminium bromide (-C 6 H 16 BrN) side chains. When introducing as the cathode interface layers on ZnO, solvent annealing was applied on these two fullerene derivatives layers and then obvious self-assembly were observed, which were supported by X-ray diffraction (XRD) and water contact angle measurement. It was found that the fullerene derivatives could modify the nanoparticle of ZnO surface , passivate surface traps, suppress the recombination loss of carriers, reduce the series resistance and improve the electrical coupling of ZnO/active layer effectively. The power conversion efficiencies (PCEs) of the devices with structure of ITO/ZnO/fullerene derivatives/PTB7-Th: PC 71 BM/MoO 3 /Al are enhanced to 8.56% and 9.00% for C 60 -PEHBS and C 60 -2EHTPB respectively, compared to 8.13% of bare ZnO. The new amphiphilic triblock macromolecules and their solvent induced self-assembly opens an opportunity to study the morphologies in their super thin layers and develop their applications.

CAS / MDL: 95-50-1
研究领域: 材料科学 · 能源科学
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ACS Applied Materials & Interfaces · 2023 · IF 9.5

Regulating the Interplay at the Buried Interface for Efficient and Stable Carbon-Based CsPbI2Br Perovskite Solar Cells

Dan Zhang,Xiang Zhang,Tonghui Guo,Junjun Jin,Junjie Zou,Zhenkun Zhu,Yuan Zhou,Qiang Cao,Jing Zhang,Zhiwei Ren,Qidong Tai

Buried interface modification is promising for preparing high-performance perovskite solar cells (PSCs) by improving the film quality and adjusting the interfacial energy level alignment. In this work, multifunctional ethylenediaminetetraacetic acid diammonium (EAD)-modulated ZnO is employed as an effective buried interface to regulate the interplay between SnO2 and CsPbI2Br in carbon-based inorganic PSCs (C-IPSCs). The burying of EAD into the ZnO interlayer not only enhances the photoelectric properties of ZnO by passivating oxygen defects but also adjusts the energy level alignment of the buried interface. More importantly, the perovskite quality is optimized and the buried interface defects are passivated due to the formation of coordination and hydrogen bondings. Benefiting from such a robust and efficient charge transfer configuration, a maximum power conversion efficiency of 14.58% is achieved in the optimized device, which represents the highest performance reported among those of low-temperature CsPbI2Br C-IPSCs. In addition, the unencapsulated device demonstrates better long-term and thermal stability.

研究领域: 材料科学 · 能源技术 · 光伏器件
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SOLAR ENERGY MATERIALS AND SOLAR CELLS · 2025 · IF 6.3

Synergistic In/Cd Co-doping strategy for optimizing band alignment achieves 10.23 % efficient ZnO-free Cu2ZnSn(S,Se)4 solar cells

Jingyuan Guo,Letu Siqin,Yufei Li,Wenbo Li,Ruijian Liu,Hongmei Luan,Chengjun Zhu

The band alignment of Cu 2 ZnSn(S,Se) 4 (CZTSSe)/CdS(In) in novel CZTSSe solar cells without a ZnO window layer has been initially investigated in our previous studies. However, the In content of CdS(In) diffused into the absorber is low, and the ability to regulate the band arrangement is limited. In this work, we employ In-ion-doped absorbers to adjust defects. However, this approach leads to a significant loss in short-circuit current density (Jsc). To address this, Cd is introduced to enhance Jsc through grain growth promotion and morphological improvement, thereby offsetting the Jsc loss induced by In doping. The co-doping of In and Cd reduces the conduction band offset (CBO) from 0.28 eV to 0.21 eV, thereby inhibiting carrier recombination and enhancing transport efficiency. Additionally, the concentration of bulk defects is reduced by an order of magnitude. As a result, the fill factor (FF) increased from 56.97 % to 60.08 %, Jsc increased from 37.10 mA/cm 2 to 38.66 mA/cm 2 , and open-circuit voltage (Voc) increased from 431.64 mV to 440.48 mV. Finally, the power conversion efficiency (PCE) of CZTSSe solar cell is enhanced to 10.23 %.

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