Zhicai Xing,Qingxin Chu,Xinbang Ren,Chenjiao Ge,Abdullah H. Qusti,Abdullah M. Asiri,Abdulrahman O. Al-Youbi,Xuping Sun
In this communication, for the first time, we demonstrate the electrodeposition of Ni 3 S 2 on ZnO (ZnO@Ni 3 S 2 ) array supported on nickel foam. We further demonstrate the direct use of ZnO@Ni 3 S 2 array as a binder-free electrode material for supercapacitors and this electrode exhibits a very high specific capacitance of 1529 F g −1 at a current density of 2 A g −1 , good rate capability and cycling stability.
Strain engineering has emerged as a powerful technique for modulating the bandgap in two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs) and graphene, which are critical for structural optimization in nanoelectronics and optoelectronics. Despite the promise of these materials, a significant challenge remains in achieving precise and controllable strain effects, particularly in graphene, to exploit its full potential in device applications. This gap in controllability limits the ability to fully leverage the sensitive changes in interfacial properties that strain can induce in 2D materials. Here, we present an approach to precisely control strain effects in monolayer graphene by applying mechanical force through a ZnO array substrate. The ZnO arrays were fabricated with controlled dimensions using lithographic templates, allowing for accurate strain modulation when graphene was wet-transferred onto the array. This method enabled effective coupling between the strain in graphene and the graphene/ZnO Schottky junction, significantly enhancing the device's optoelectronic performance. The resulting device demonstrated a broad response from ultraviolet to visible spectrum. Remarkably, the device achieved an outstanding responsivity of 39.1 mA W⁻¹ at 320 nm with a 3V bias. These findings provide a practical and innovative solution to the challenges of strain engineering in 2D materials.
The increasing demand for wearable electronics and the intensification of electromagnetic pollution have boosted the exploration of high-performance flexible microwave absorption (MA) materials. Herein, the hierarchical Ti3C2Tx MXene/Ni chain/ZnO array hybrid nanostructures are rationally constructed on cotton fabric for acquiring enhanced MA performance and durable self-cleaning ability. Based on the high dielectric loss capacity of MXenes and ZnO arrays, by controlling dip-coating numbers of Ni chains, the magnetic loss can be manipulated to modulate the impedance matching, reflection loss (RL), and effective absorption bandwidth (EAB, the bandwidth of RL < −10 dB). The minimum RL value of the designed fabric can reach −35.1 dB at 8.3 GHz with a thickness of 2.8 mm, and its EAB can cover the whole X-band with only a 2.2 mm thickness. In addition, the designed fabric also exhibits superior liquid repellency and durable self-cleaning ability due to the combination of the hybrid nanostructures and a superhydrophobic coating. This work provides an insight for rational design of textile-based MA materials, showing potential applications in flexible and wearable functional electronics.
危险品化学品经营许可证（带存储）