CHEMICAL PHYSICS LETTERS
·
2025
·
IF 3.1
Minghao Zhou,Shijiao Zhang,Yanlai Wang
By employing semiconductor composite strategies and morphology control, Zn-doped CuInS 2 quantum dots with a ZnS shell structure (ZCIS@ZnS QDs) have been synthesized and combined with TiO 2 nanowires or nanoparticles (NWs/NPs) for photodetector applications. In the composite material, the QDs are uniformly attached to the surface of TiO 2 NWs/NPs. The photodetector constructed with ZCIS@ZnS QDs and TiO 2 NWs/NPs (ZCIS@ZnS@TiO 2 NWs/NPs) demonstrated superior photodetection performance. It exhibited excellent responsivity (∼6.2 mA/W) and detectivity (∼1.6 × 10 12 Jones) under ultraviolet (UV) illumination (∼365 nm). This non-toxic and environmentally friendly composite material provides a promising alternative for applications in various fields.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Coatings
·
2021
·Vol. 11
·期 5
·581
·
IF 2.881
Linyuan Lian,Youyou Li,Daoli Zhang,Jianbing Zhang
InP quantum dots (QDs) are promising down-conversion phosphors for white light LEDs. However, the mainstream InP QDs synthesis uses expensive phosphorus source. Here, economic, in situ-generated PH3is used to synthesize InP QDs and a two-step coating of ZnS shells is developed to prepare highly luminescent InP/ZnS/ZnS QDs. The QDs show a photoluminescence quantum yield as high as 78.5%. The emission can be tuned by adjusting the halide precursor and yellow emissive InP/ZnS/ZnS QDs are prepared by judiciously controlling the synthetic conditions. The yellow QDs show suppressed thermal quenching and retain >90% room temperature PL intensity at 150 °C for the growth solution. Additionally, the PL spectrum matches with the eye sensitivity function, resulting in efficient InP QD white light LEDs.Keywords:InP;quantum dots;core/shell;InP/ZnS;thermal quenching
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2020
·Vol. 55
·期 27
·12801-12810
·
IF 3.553
Cao Sheng,Dai Chencheng,Yao Shangfei,Zou Bingsuo,Zhao Jialong
In recent years, light-emitting Mn 2+ -doped nanocrystals (NCs) have been widely studied because of their strong and stable Mn 2+ d–d emission. Herein, highly efficient colloidal Mn 2+ -doped Cd–In–S NCs were prepared by a hot injection strategy. The as-prepared NCs have a cubic crystal structure of CdS host and exhibit strong Mn 2+ emission. The photoluminescence (PL) intensity, PL position, and PL lifetime of this Mn 2+ emission can be adjusted by changing the doping level of Mn 2+ . In particular, by tuning the amount of dopant, the emission color can be varied in the range of 601 nm to 643 nm, which is due to the coordination field environment of Mn 2+ ions changed by the doping concentration. The PL intensity of Mn 2+ is significantly enhanced by the ZnS shell coating, and the highest PL quantum yield can reach 56%, which is attributed to the removal of NCs surface-related defects by shell modification. A prototype LED was fabricated as well by using the as-prepared highly efficient Mn 2+ -doped Cd–In–S NCs as a color conversion material. The Mn 2+ -doped multicomponent semiconductor NCs reported here extend the availability of classical Mn 2+ -doped luminescent materials and provide alternatives for other applications requiring orange-red colloidal NCs.
研究领域:
材料科学
·
光学
·
纳米技术
✓ 已验证
DOI
高影响因子
NANOTECHNOLOGY
·
2022
·Vol. 33
·期 50
·505602
·
IF 3.953
Fan Fang,Haochen Liu,Zuoliang Wen,Chenxi Liu,Bing Xu,Zhikuan Zhang,Kai Wang,Mehmet Ertugrul,Wei Lei,Xiao Wei Sun
Colloidal quantum dots (QDs) are promising luminescent materials for display and lighting, but their stability has long been an issue. Here, we designed a passivation strategy of doping Ti ions into the shell of alloyed CdZnSeS@ZnS QDs. The results showed that Ti ions were successfully doped into the ZnS shell and the stability of QDs was improved. In the aging test, the Ti ions doped QDs maintained 51.4% of the initial performance after 90 h of aging, while the pristine QDs decreased to less than 25% of the initial value. In addition, we discuss the reasons why Ti ions doping improves the stability of QDs. Ti ions are found to form Ti–S bonds in the ZnS shell, which has high binding energy and strong oxidation resistance. Most importantly, since there is no external physical insulating coating, the optimized QDs can also be directly used in electroluminescent devices, showing great potential in electroluminescence applications.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
OPTICAL MATERIALS
·
2024
·
IF 3.8
Jianpu Lin,Shengjie Zhang,Lingfeng Du,Baiquan Zhang,Xiongtu Zhou,Yongai Zhang,Chaoxing Wu
The wavelength tunable and environmentally friendly InP quantum dots are considered one of the most powerful alternatives to cadmium-based quantum dots, and the luminescent devices prepared with them also show great potential. There is still room for improvement in the synthesis methods and device applications of InP based quantum dots. In this work, we report one pot synthesis route for InP/ZnSe/ZnSeS/ZnS green QDs based on tris(dimethylamino)phosphine (DMP) phosphorus by using the strategy of multi shell coating and gradient heating to reduce surface defects of quantum dots. The shell structure, dosage, and growth temperature have all been taken into account in order to explore better performance of InP QDs. The synthesized green quantum dots have 86 % PLQY and a full width at half maximum of 36 nm. In addition, the synthesized green InP quantum dots are applied in AC QLED devices. The experimental results show that the luminescence intensity is affected by the driving voltage and frequency, which is similar to the working mode of non-carrier-injected emitting devices. And there is a matching value between the voltage and frequency.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
·
2024
·Vol. 26
·期 15
·11498-11505
·
IF 2.9
Jiannan Sun,Ke Yan,Aizhao Pan,Pan Zhang,Xuehang Chen,Xinyi Shi,Chengyu Shi
Fluorescence nanothermometry based on quantum dots is a current research hotspot for novel non-contact temperature monitoring, and is of vital significance for the modulation and design of the sensing properties of sensors. Herein, a design strategy to modulate the temperature-sensing characteristics of quantum dots based on the thickness of a shell is proposed. In this study, CdSe/ZnS quantum dot/POSS-based temperature probe films with varying fluorescence characteristics were developed, and the influence of the ZnS shell on temperature sensing was examined by varying the thickness of the ZnS shell. The temperature dependency, linearity, range of applications, and reversibility of quantum dot thin film probes were all considerably regulated by the ZnS shell, according to research on quantum dot/POSS-based films coated with various shell thicknesses. The CdSe/ZnS temperature probe with 4 monolayers (MLs) stood out among the rest due to its strong thermal stability (at least 5 cycles), large usable temperature range (20–80 °C), and excellent temperature sensitivity (R2 > 0.994). The results demonstrated that the temperature sensing performance of quantum dots was the consequence of the combined effect of multiple temperature response properties induced by the thickness of the shell, and the shell control of quantum dots to optimize the temperature sensing performance was an essential approach for the design of temperature probes. This work demonstrates the great potential of the shell in tuning the temperature sensing performance of quantum dots and provides a viable approach for the design of quantum dot temperature probes.
研究领域:
材料科学
·
纳米技术
·
传感器技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2023
·Vol. 11
·期 6
·2202128
·
IF 9
Xiaopeng Zhou,Jiejun Ren,Wenlei Cao,Andries Meijerink,Yuhua Wang
Colloidal indium phosphide quantum dots (In(Zn)P/ZnS QDs) show potential for application in the field of light emitting diodes (LED) and Mini/Micro-LEDs displays due to their tunable emission and low toxicity. However, the performance of blue-emitting indium phosphide QDs is still lagging behind that of red and green. Herein, a facile method to overcome this difficulty is proposed. The highly active Zn(ClO 4 ) 2 precursor is injected into the reaction mixture during the nucleation process to enhance zinc incorporation, which generates the In(Zn)P alloy QDs with enlarged bandgap. At the same time, the increase of zinc content can inhibit excessive growth of In(Zn)P QDs, and significantly improve its size distribution. The monodisperse In(Zn)P/ZnS QDs exhibit excellent blue emission (466 nm) and have the narrowest full width at half maxima (41 nm) of blue emission In(Zn)P QDs ever reported. This work provides a feasible and effective strategy for obtaining narrow-band blue-emitting In(Zn)P/ZnS QDs.
研究领域:
材料科学
·
纳米技术
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
Nano Research
·
2024
·
IF 9.5
He Jinhua,Wang Chenhui,Liu Mingrui,Ramzan Muhammad,Long Zhiwei,Wu Xian-gang,Chen Yu,Zhong Haizheng
The potential use of large-size ZnSe quantum dots as blue emitters for display applications has greatly inspired the colloidal synthesis. Herein, we report the negative effects of side reactions of large-size ZnSe quantum dots. The side reactions between oleic acid and oleylamine generated amidation products and H 2 O, which led to the hydrolysis of Zn(OA) 2 to Zn(OH) 2 and the subsequent formation of zinc oxide (ZnO) and zinc bis[diphenylphosphinate] (Zn(DPPA) 2 ) precipitates. These side reactions resulted in the formation of a defective surface including a Se-rich surface and oxygen-related defects. Such negative effects can be overcome by adopting an etching strategy using potassium fluoride and myristic acid in combination. By overcoating a ZnS shell, blue emissive ZnSe/ZnS quantum dots with a maximum photoluminescence quantum yield of up to 91% were obtained. We further fabricated ZnSe quantum dots-based blue light-emitting diodes with an emission peak at 456 nm. The device showed a turn-on voltage of 2.7 V with a maximum external quantum efficiency of 4.2% and a maximum luminance of 1223 cd·m −2 .
研究领域:
材料科学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Nano Materials
·
2023
·
IF 5.9
Zhongjie Cui,Shuaitao Qin,Haiyang He,Zhuoqi Wen,Dan Yang,Zhiyan Piao,Shiliang Mei,Wanlu Zhang,Ruiqian Guo
As a kind of luminescent nanomaterial, InP quantum dots (QDs) have been regarded as one of the most potential nontoxic alternatives for cadmium-based QDs in the light-emitting devices, and much progress has been obtained recently. However, their growth kinetics remains not fully revealed yet, and the effects of the shelling process on as-synthesized InP cores have been rarely investigated. Herein, the growth kinetics of InP QDs is investigated via the convenient method of varying halide ions, and their sequential growth is proposed according to the discontinuous evolution of their first exciton absorption peaks, especially the observed typical positions, which is different from the reported continuous evolution previously and means that the specific sized InP cores appeared during the growth stage. Moreover, the impacts of ZnS are analyzed from the quantum confinement effect of ZnS on InP cores with different sizes and interfacial heterovalent bonds. The coordination between these two aspects decides the final positions of the first exciton absorption peaks of InP/ZnS QDs. Compared with the positions of the first exciton absorption peaks of bare InP QDs, insufficient confinement of the ZnS shell to small InP cores causes the red-shift, but the heterovalent bonds at the interface cause the blue-shift. Furthermore, the emissions of final InP/ZnS QDs are influenced, and the emission from 484 to 578 nm is obtained via this facile synthetic protocol. It is thought that this study can reveal the growth of InP QDs and provide guidance to design rational InP-based QDs with desired emission and high performance, contributing to the fabrication of efficient light-emitting devices.
研究领域:
材料科学
·
纳米技术
·
光学
✓ 已验证
产品关联
DOI
高影响因子
OPTICAL MATERIALS
·
2022
·
IF 3.754
Zehao Hu,Ting Chen,Zhixiang Xie,Chunxian Guo,Weihui Jiang,Yuanhong Chen,Yanqiao Xu
Microwave organic phase preparation of AgInS 2 quantum dots (QDs) is extremely essential to the large-scale, green and efficient preparation of AgInS 2 QDs. Here, commercial glycerol is used as the microwave absorber to prepare AgInS 2 QDs in nonpolar organic solvent octadecene at reaction temperature range of 100–180 °C. The AgInS 2 QDs can be obtained within 15 min and exhibit tunable photoluminescent properties. After decorating by ZnS layer, the prepared AgInS 2 @ZnS core/shell QDs emitted a bright orange-yellow light under ultraviolet light irradiation, and its quantum yield increased from 13.66% to 33.10%. Moreover, it exhibited excellent spectral tunability among the range of 608.0 nm–549.8 nm with the molar ratios of Zn/AgIn changed from 0 to 3. Finally, a WLED was fabricated by combining AgInS 2 @ZnS QDs and Y 3 Al 5-x Ga x O 12 :Ce 3+ phosphors with a blue chip, the color rendering index (CRI), correlated color temperature (CCT), and luminous efficiency (LE) of the device was 87.6, 3361 K, and 58.83 lm/W, respectively, indicating the great application prospect in illumination. The research explores a novel avenue for the fast and efficient synthesis of I–III–VI semiconductor QDs in nonpolar solvent via microwave method.
研究领域:
材料科学
·
光学工程
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2023
·
IF 10.9
H.X. Lu,H. Liu,Z.Z. Fu,Y.Y. Chen,H.Q. Dai,Z. Hu,W.L. Zhang,R.Q. Guo
In this study, a two-step method was used to synthesize highly luminescent AgGaS/ZnS/ZnS quantum dots (QDs). In the first step, an inner ZnS shell was formed via a one-pot method, which resulted in a smaller lattice mismatch between the AgGaS core and the outer ZnS shell, thereby facilitating the formation of a thick outer shell. After the two-step shelling process, the synthesized AgGaS/ZnS/ZnS QDs showed an excellent photoluminescence quantum yield (PLQY) of 96.4% with a peak wavelength of 508 nm, representing the highest PLQY reported thus far for AgGaS QDs. Furthermore, the effect of halogen ions in Zn precursors on the shelling process was investigated. It was proposed that the capacity of halogen ions to coordinate with the QDs influenced the balance between Zn cation diffusion and ZnS shelling reaction. Specifically, the ZnS shelling reaction was dominant when ZnCl 2 was employed, while Zn cation diffusion was the dominant process under the I − -rich environment. This work provides insights into the interfacial restructuring during the ZnS shelling and offers a clear map for the tailored synthesis of core/shell QDs.
研究领域:
材料科学
·
化学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Lizhao Nie,Linqi Chen,Jingzhou Li,Yijing Wang,Xiaoxia Wang,Long Zhang,Hongxing Dong,Anlian Pan
Copper indium selenide (CISe) quantum dots (QDs), a class of narrow bandgap and environmentally friendly QDs, have been developed rapidly for application in the fields of biomedicine, solar cells, and telecommunications. However, synthesizing CISe QDs that emit beyond 800 nm while maintaining high photoluminescence quantum yields (PLQY) remains a significant challenge. Herein, we employed a hot injection solution method to synthesize high-quality core–shell structure Zn:CuInSe2/ZnS QDs by adjusting the stoichiometric ratio of the CISe core and doping with Zn2+. The fabricated QDs exhibit a high PLQY of 62.7% at an emission wavelength of 810 nm with excellent photochemical stability and a large Stokes shift (150 nm). This can be attributed to pre-doping, which suppresses the cation exchange between Zn2+ and Cu+ or In3+ during the shelling process, and the passivation effects of ZnS on surface defects of the QDs. Furthermore, we demonstrate their application by using a home-built optical wireless communication (OWC) test platform, and the prepared QDs exhibit a modulation bandwidth of 3.23 MHz. With a bit error rate (BER) below the forward error correction (FEC) threshold of 0.0038, the system is capable of achieving a maximum data transmission rate of 14 Mbps. The synthesized high-efficiency PLQY Zn:CuInSe2/ZnS QDs could be expected to promote the development of near-infrared (NIR) wireless communications.
研究领域:
材料科学
·
光电子学
·
通信工程
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）