Gas-phase alkali halide assisted stable precursor supply from zirconium carbide for the synthesis of 2D large-sized ZrS2 nanosheets
Group-IVB transition metal dichalcogenides such as HfS2 and ZrS2 demonstrate the most promising the semiconducting properties, with moderate band gaps and high predicted carrier mobilities. However, lateral growth of large domain-size single crystalline ZrS2 nanosheets still lack to be developed, which limited various electronic and optoelectronic applications. Here, we report a new precursor strategy for the synthesis of large-sized 2D ZrS2 nanosheets with lateral orientations. The stable precursor volatilization of high melting point zirconium carbide was controlled by the assistance of remote gas-phase alkali halide, which avoid the high nucleation density and vertical orientation at the initial stage. The 2D ZrS2 nanosheets were regulated by adjusting the growth parameters with the lateral size up to 22 μm and thinnest thickness of 8 nm, exhibiting high crystalline qualities and uniform surface. Field effect transistors of 2D ZrS2 nanosheets exhibited n-type transport characteristics with high on/off ratio and reasonable carrier mobilities. Our new precursor and chemical design pave a way for the synthesis of high-performance Group-IVB transition metal dichalcogenides wafers.
危险品化学品经营许可证（带存储）