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epitaxial growth
Journal of Materials Chemistry C · 2019 ·Vol. 7 ·期 20 ·6077-6084 · IF 6.641

Epitaxial growth via anti-solvent-induced deposition towards a highly efficient and stable Mn4+ doped fluoride red phosphor for application in warm WLEDs

Chunyan Jiang,Lihua Li,Mikhail G. Brik,Litian Lin,Mingying Peng

The poor moisture-resistant property of the commercial narrow band red-emitting K2SiF6:Mn4+ phosphor restricts its practical application in high performance warm WLEDs. Herein, we report epitaxial growth via simple ethanol-induced deposition to enhance the luminescence and moisture resistance of K2SiF6:Mn4+. Specifically, an appropriate amount of ethanol at the end of the synthesis leads to epitaxial growth of a K2SiF6:Mn4+ shell. The resultant K2SiF6:Mn4+@K2SiF6:Mn4+ presents higher photoluminescence intensity due to a high Mn4+ critical concentration in the K2SiF6:Mn4+ epitaxial shell. Furthermore, the epitaxial growth of the K2SiF6 shell on K2SiF6:Mn4+ is designed to conquer the moisture resistance. As expected, the formed K2SiF6:Mn4+@K2SiF6 retains 82% of the initial emission intensity after being immersed in water for 4 h and 90% after being exposed to high temperature and humidity (85 °C, 85%) for 10 days. By employing K2SiF6:Mn4+@K2SiF6 as a red phosphor, a packaged white LED exhibits excellent performance with a CRI of 96.5, a CCT of 2879 K and a luminous efficacy of 119.74 lm W−1. More importantly, this fabricated WLED device retains high luminous efficacy and undergoes minor chromatic coordinate changes when aged at high temperature and humidity (85 °C, 85%). Therefore, these findings not only illustrate the effect of ethanol addition on the photoluminescence intensity of Mn4+ doped phosphors in the synthesis process, but also provide a facile strategy to improve the moisture resistance of K2SiF6:Mn4+ for warm WLEDs in the future.

研究领域: 材料科学 · 光学工程
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Nature Nanotechnology · 2024 · IF 38.1

Regioselective epitaxial growth of metallic heterostructures

Huang Xuan,Feng Jie,Hu Shengnan,Xu Bingyan,Hao Mingsheng,Liu Xiaozhi,Wen Yan,Su Dong,Ji Yujin,Li Youyong,Li Yinshi,Huang Yucheng,Chan Ting-Shan,Hu Zhiwei,Tian Na,Shao Qi,Huang Xiaoqing

Constructing regioselective architectures in heterostructures is important for many applications; however, the targeted design of regioselective architectures is challenging due to the sophisticated processes, impurity pollution and an unclear growth mechanism. Here we successfully realized a one-pot kinetically controlled synthetic framework for constructing regioselective architectures in metallic heterostructures. The key objective was to simultaneously consider the reduction rates of metal precursors and the lattice matching relationship at heterogeneous interfaces. More importantly, this synthetic method also provided phase- and morphology-independent behaviours as foundations for choosing substrate materials, including phase regulation from Pd 20 Sb 7 hexagonal nanoplates (HPs) to Pd 8 Sb 3 HPs, and morphology regulation from Pd 20 Sb 7 HPs to Pd 20 Sb 7 rhombohedra and Pd 20 Sb 7 nanoparticles. Consequently, the activity of regioselective epitaxially grown Pt on Pd 20 Sb 7 HPs was greatly enhanced towards the ethanol oxidation reaction; its activity was 57 times greater than that of commercial Pt/C, and the catalyst showed increased stability (decreasing by 16.3% after 2,000 cycles) and selectivity (72.4%) compared with those of commercial Pt/C (56.0%, 18.2%). This work paves the way for the design of unconventional well-defined heterostructures for use in various applications.

研究领域: 材料科学 · 催化 · 纳米技术
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iScience · 2023 · IF 5.8

Tailoring the epitaxial growth of oriented Te nanoribbon arrays

Jie Li,Junrong Zhang,Junwei Chu,Liu Yang,Xinxin Zhao,Yan Zhang,Tong Liu,Yang Lu,Cheng Chen,Xingang Hou,Long Fang,Yijun Xu,Junyong Wang,Kai Zhang

Summary As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm 2  V −1  s −1 and 1.5×10 5 , respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.

CAS / MDL: 13494-80-9
研究领域: 材料科学 · 半导体物理
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CURRENT APPLIED PHYSICS · 2020 ·Vol. 20 ·期 10 ·1130-1135 · IF 2.281

Epitaxial growth of <010>-oriented MoO2 nanorods on m-sapphire

Jinxin Liu,Jiao Shi,Di Wu,Xiaoming Zheng,Fengming Chen,Junting Xiao,Youzhen Li,Fei Song,Yongli Gao,Han Huang

Molybdenum dioxide (MoO 2 ) materials have attracted considerable interests due to their superduper properties and potential applications, relating to the growth directions and exposed surfaces. Here, we reported as the substrate changes from c-to m-sapphire, the growth direction of epitaxial MoO 2 nanorods via an atmospheric pressure chemical vapor deposition approach changes along from <001> to <010> of bulk monoclinic MoO 2 accompanied by exposing different surfaces. Optical microscopy (OM), Raman spectroscopy , X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), cross-sectional scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) measurements reveal these MoO 2 nanorods are epitaxially grown on m-sapphire substrates with the orientation of MoO 2 (101)//sapphire ( 10 1 ‾ 0 ) and MoO 2 <010> in line with sapphire <0001>. The electrical conductivity significantly depends on the crystallographic direction of MoO 2 nanorods . The method to control the growth directions of 1D MoO 2 nanorods has potential applications in nanoelectronic devices.

研究领域: 材料科学 · 纳米技术 · 凝聚态物理 · 电子材料
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Nanoscale · 2026 · IF 5.2

Epitaxial growth of single-crystal violet phosphorus flakes on silicon substrates

Zhiqi Zhang,Jiazheng Lin,Zhuorui Wen,Kerui Hu,Lihui Zhang,Jinying Zhang

Violet phosphorus structure, a promising van der Waals semiconductor, has attracted growing attention due to its unique properties. It is still a big challenge to grow violet phosphorus or phosphorene on certain substrate. Herein, violet phosphorus flakes with tuneable sizes have been directly grown on silicon substrate using exfoliated violet phosphorene nanosheets as seeds. A chemical transport method based on P/I/Sn sources was adopted to epitaxial growth of violet phosphorus flakes. The edges of violet phosphorene nanosheets were found to decompose initially with increasing temperature, subsequently acting as homogeneous nuclei for the growth of violet phosphorus flakes in both the lateral and vertical (out-of-plane) directions. The size of violet phosphorus flakes was found to increase with increasing reaction time. The average lateral sizes of the as-grown violet phosphorus flakes were found to grow from ~0.98 μm to ~41.54 μm, with average thickness from ~0.15 μm to ~3.82 μm after 48 h of reaction. The as-grown flakes were further confirmed using a marked silicon substrate, where the violet phosphorene nanosheet seeds were found to grow from lateral size of 0.95/1.04 μm with thickness of 0.09/0.11 μm to 30.22/36.64 μm with thickness of 2.31/2.57 μm after 10 h of reaction. The successful growth of violet phosphorus flakes on silicon substrate enables the development of advanced electronic and optoelectronic devices based on violet phosphorus and phosphorene structures, enhancing the functionality of next-generation technologies.

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JOURNAL OF ALLOYS AND COMPOUNDS · 2025 · IF 6.3

Epitaxial growth-engineered CoS@CoSe2 heterojunction for enhanced oxygen evolution reaction

Chuanqi Feng,Chengbao Ge,Rongxiao Ma,Yebang Zhou,Lumin Wang,Dashuai Zhang,Zhong-Zheng Gao,Shaohong Zhang,Kang Wang,Peng Zhang,Zhaohui Huang,Bijiang Geng

Single metal chalcogenide catalysts still face challenges of insufficient catalytic active sites and slow catalytic reaction kinetics for oxygen evolution reactions (OER). Herein, a novel CoS@CoSe 2 heterojunction composite catalyst was constructed through heterojunction interface engineering strategy. The single-crystal CoSe 2 nanorods were successfully epitaxially grown on the surface of amorphous CoS nanoblocks by a two-step hydrothermal cascade in-situ growth technique. Benefiting from the interface coupling and synergistic effect of the CoS@CoSe 2 heterojunction, the designed electrocatalyst exhibited outstanding catalytic activity for OER, attaining a current density of 10 mA cm −2 with a low overpotential of only 115 mV, surpassing other reported chalcogenide electrocatalysts. Density functional theory (DFT) calculations revealed that the work function difference between CoS and CoSe 2 induces directional redistribution of charges at the heterojunction interface, rendering the CoSe 2 surface electron-deficient, thereby significantly optimising OH⁻ adsorption energy. Simultaneously, the heterojunction structure significantly enhances the total density of states around the Fermi level while also improving the d -band center of metallic active sites. These modifications promote more favorable adsorption of reaction intermediates, effectively reduce the energy barrier for the OER, accelerate reaction kinetics, and ultimately improve the overall catalytic performance. This study presents a promising strategy for the rational design and development of high-performance catalytic materials.

CAS / MDL: 12030-49-8
研究领域: 材料科学 · 电化学 · 纳米技术 · 催化 · 能量存储与转换
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CRYSTAL GROWTH & DESIGN · 2025 · IF 3.4

Epitaxial-Growth SnSe2/SnSe Lateral Heterojunction Boosts Piezocatalytic Degradation of Antibiotics

Yue Liu,Huan-Yan Xu,Bo Li

Piezoelectric materials provide new avenues for driving the catalytic degradation of organic pollutants by harvesting mechanical energy, but high carrier recombination is a major obstacle to improving piezoelectric catalytic efficiency. Heterojunction construction is one of the effective strategies used to inhibit carrier recombination. Especially, the lateral heterostructure can solve the problem of the decline in piezoelectric performance caused by vertical heterojunctions in two-dimensional materials. Here, a pioneering SnSe2/SnSe lateral heterojunction was fabricated by epitaxially growing SnSe2 along the edge of a SnSe nanosheet through a combination strategy of HNO3 exfoliation and calcination. Compared with SnSe, the SnSe2/SnSe heterojunction displayed much higher piezocatalytic activity for the degradation of various antibiotics in water. Based on the radical trapping experiments and electron paramagnetic resonance characterizations, superoxide radicals were identified as the dominant reactive oxygen species. The piezoelectric properties and electronic band structures of SnSe and SnSe2/SnSe were analyzed by piezoresponse force microscopy combined with density functional theory calculations. The enhancement mechanism of piezocatalytic performance of the SnSe2/SnSe heterojunction was elucidated, and a II-scheme charge transfer mechanism at the SnSe2/SnSe interface driven by a built-in electric field was put forward. This work will enrich the development of piezoelectric catalysis technology and provide new ideas for the design of heterostructured piezocatalysts.

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JOURNAL OF ELECTROANALYTICAL CHEMISTRY · 2025 · IF 4.1

Epitaxial growth of seed layers: Achieving highly (111)-oriented nanotwinned copper

Gangli Yang,Liu Chang,Hongjia Zhu,Jie Wang,Liyi Li

Electroplated copper with a (111)-oriented nanotwin structure (111-nt-Cu) exhibits high strength, low resistivity, and superior electromigration resistance. These properties render 111-nt-Cu appealing as a candidate for interconnect in three-dimensional integrated circuits (3D ICs). Conventional direct current (DC) electroplating of 111-nt-Cu inherently forms a polycrystalline transition layer (TL) between the seed layer and twin structure. The TL could compromise structural integrity and reliability. Mitigation of the TL formation during electroplating has been a critical challenge and rarely reported. Here, we demonstrate a strategy for TL-free 111-nt-Cu via epitaxial DC electrodeposition, enabled by the synergistic optimization of a tailored (111)-oriented seed layer and electroplating recipes. The epitaxial seed layer growth mechanism relies on minimal lattice mismatch between Ti(0002) and Cu(111). The 111-nt-Cu exhibits (111) preferred orientation along the vertical direction ( Z -axis) and (110), (112) preferred orientations along the horizontal direction. The Schmidt factor is significantly higher along the horizontal direction compared to the vertical direction, while the cross-sectional elastic modulus and hardness are lower than those of the surface normal. TL-free 111-nt-Cu holds promise for sub-micrometer Cu interconnect applications, addressing critical challenges in advanced 3D IC fabrication.

CAS / MDL: 9000-70-8
研究领域: 材料科学 · 电化学 · 半导体技术 · 纳米技术
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COMPOSITES PART B-ENGINEERING · 2022 · IF 11.322

Ternary assembled MOF-derived composite: Anisotropic epitaxial growth and microwave absorption

Fei Wu,Lingyun Wan,Qingyan Li,Qiuyu Zhang,Baoliang Zhang

In recent years, metal-organic framework (MOF)-derived absorbers have attracted much attention in the field of microwave absorption. It is interesting and difficult to construct multiple MOF-on-MOF heterostructures . Herein, we combine two unique anisotropic epitaxial growth strategies to build binary assemblies DUT-52@MIL-88B (DM) and DUT-52@MIL-88C (DMC), and then the ternary assembly DUT-52@MIL-88B@MIL-88C (DMM). The formation mechanisms of the assembled structure are clarified. Besides, they are converted into magnetic porous carbon-based absorbers (DM-700 and DMM-700) through a facile carbonization process . The microwave absorption mechanisms are elucidated. The results indicate that the exquisite multi-element composite structure endows the absorber with suitable impedance matching characteristics, complementary loss mechanisms and excellent electromagnetic loss capabilities. It is worth noting that DM-700 exhibits a remarkable minimum reflection loss (RL min ) of −67.5 dB under a matching thickness of 3.6 mm, corresponding to an effective absorption bandwidth (EAB, RL < −10 dB) of 2.0 GHz and the filler loading of 55%. The optimized absorber DMM-700 successfully achieves the optimization of the above-mentioned microwave absorbing properties. While maintaining the desirable RL min (−56.4 dB), the matching thickness is reduced (2.4 mm), and at the same time, EAB is doubled (4.0 GHz). This study might provide a new idea for the construction of sophisticated absorbers with multi-MOF-on-MOF structures.

研究领域: 材料科学 · 电磁学
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Physica Status Solidi-Rapid Research Letters · 2024 · IF 2.5

Epitaxial Growth of Cs3Cu2I5 Single-Crystal Arrays for UV-Responsive Neuromorphic Devices

Yang Yu,Zhonglong Zhang,Qiuchun Lu,Jiaqi Tang,Wenqiang Wu,Xun Han

Copper-based halides, a type of perovskite derivative, inherit their excellent optoelectronic properties and solution processability and also have the advantages of being nontoxic and stable. Despite the tremendous achievements of microfabrication in conventional halide perovskites, reports on copper-based halide array devices are rare due to their difficult high-quality crystallization. Here, by introducing single-crystal thin films grown by space confinement method as substrates, reliable photolithography based on their single crystals is successfully achieved and controllable homoepitaxial single-crystal arrays is demonstrated. By adjusting the substrate, angle, and growth time, the orientation, arrangement, and size of arrays could be controlled. Temperature and time are used to regulate the growth stage to obtain clean and appropriately sized arrays. ITO/Cs 3 Cu 2 I 5 /ITO neuromorphic device based on homoepitaxial arrays is developed. The variation of synaptic plasticity could be controlled by the number and frequency of light pulses. The device successfully simulated the process of “learning, forgetting, and relearning” in the human brain, demonstrating the potential of application in sensing-storage-computing-integrated devices.

研究领域: 材料科学 · 光电子学 · 神经形态计算
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Cell Reports Physical Science · 2024 · IF 7.9

MOF polycrystalline membrane on zinc metal anode through liquid-phase epitaxial growth

Haiyang Wu,Yang Li,Langyuan Wu,Zhiwei Li,Yimin Xing,Dewei Xiao,Zengjie Fan,Xiaogang Zhang

Zinc-ion batteries (ZIBs) have faced persistent challenges related to dendrite growth and the hydrogen evolution reaction (HER). Herein, a metal-organic framework (MOF) polycrystalline membrane is introduced into the realm of ZIB research, motivated by the remarkable separation capabilities exhibited by MOF membranes. A MOF polycrystalline membrane is constructed on the Zn anode through liquid-phase epitaxial growth at room temperature. Aberration-corrected scanning transmission electron microscopy (AC-STEM) analysis unequivocally verifies the ingress of Zn 2+ into the MOF cavities, subsequently leading to the reconstitution of the solvation sheath. Profiting from the close contact between the membrane and the Zn anode, the Zn 2+ are reduced to Zn 0 directly in the cavities of the MOF after entering. This behavior effectively regulates the deposition trajectory of Zn 2+ and eliminates the potential for secondary solvation. Leveraging the efficient separation and ion-confinement capabilities of the MOF, the Zn anode incorporating the metal-azolate framework-4 (MAF-4) membrane demonstrates notable inhibition of the HER and suppression of dendrite formation.

研究领域: 材料科学 · 电化学 · 纳米技术
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ACS Nano · 2024 · IF 15.8

Mineral-Mediated Epitaxial Growth of CoO Nanoparticles for Efficient Electrochemical H2O2 Activation

Guoqiang Zhao,Xiaoyu Tao,Tongsen Guo,Liangjie Fu,Huaming Yang

Solution-phase epitaxy is a versatile method to synthesize functional nanomaterials with customized properties, where supports play a central role as they not only serve as nucleation templates but also greatly affect the local electronic structures. However, developing functional supports remains a great challenge. Herein, inspired by the commonly observed epitaxy of minerals in the natural environment, we report using calcination-modified kaolinite as the support for the epitaxial growth of hexagonal CoO nanoparticles (h-CoO NPs), which enables over 40 times higher mass-specific activity toward H2O2 electrochemical activation than the counterpart without the support. High-resolution electron microscopy, magic-angle spinning nuclear magnetic resonance, and X-ray absorption fine structure results prove that the Al sites in kaolinite play a crucial role in the formation of h-CoO NPs. Moreover, the five-coordinate Al (AlV) sites produced by the dehydration of kaolinite are indispensable for forming the epitaxial interface. Theoretical calculations reveal that the local electron densities around AlV sites are lower than those of general six-coordinate Al sites, which render AlV sites with strong adsorption capability that facilitates the nucleation of h-CoO NPs. Also, the AlV sites induce the electron transfer from h-CoO to the kaolinite support that results in the upshift of the Co 3d band center and hence improve the H2O2 activation kinetics. Our results demonstrate the superiority of nanoclay as functional supports and could offer a more benign strategy to the solution-phase epitaxy production of functional nanomaterials for diverse applications.

研究领域: 材料科学 · 电化学 · 纳米技术
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