Science China-Materials
·
2025
·
IF 7.4
Guo Ruiang,Li Shuaiqi,Zhang Jiawei,Tian Yi,Dong Weiguo,He Duanwei
Diamond is known as the ultimate semiconductor owing to its excellent physical properties. However, the high difficulty of n-type doping and the poor electrical performance of n-type diamonds remain major challenges for the application of diamond semiconductor materials. In this paper, a high-pressure thermal diffusion method for the n-type doping of diamond, which utilizes high pressure to reduce the volume difference between phosphorus atoms and carbon atoms, is reported for the first time. This method can achieve efficient doping and ionization of phosphorus atoms at the lattice sites of diamond. The prepared phosphorus-doped diamond exhibited the lowest resistivity (2 Ω cm) and highest electron concentration (2.27 × 10 18 cm −3 ) observed in any known phosphorus-doped diamond single crystal at room temperature (300 K). The high-pressure thermal diffusion method provides an effective approach for diamond n-type doping, which may play an important role in the design and preparation of future diamond-based semiconductor devices.
研究领域:
材料科学
·
半导体物理
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2020
·Vol. 30
·期 12
·1909972
·
IF 16.836
Yu Han,Huan Zhao,Chenyang Duan,Shaomin Yang,Zhou Yang,Zhike Liu,Shengzhong (Frank) Liu
Cesium-based inorganic perovskites, such as CsPbI 2 Br, are promising candidates for photovoltaic applications owing to their exceptional optoelectronic properties and outstanding thermal stability. However, the power conversion efficiency of CsPbI 2 Br perovskite solar cells (PSCs) is still lower than those of hybrid PSCs and inorganic CsPbI 3 PSCs. In this work, passivation and n-type doping by adding CaCl 2 to CsPbI 2 Br is demonstrated. The crystallinity of the CsPbI 2 Br perovskite film is enhanced, and the trap density is suppressed after adding CaCl 2 . In addition, the Fermi level of the CsPbI 2 Br is changed by the added CaCl 2 to show heavy n-type doping. As a result, the optimized CsPbI 2 Br PSC shows a highest open circuit voltage of 1.32 V and a record efficiency of 16.79%. Meanwhile, high air stability is demonstrated for a CsPbI 2 Br PSC with 90% of the initial efficiency remaining after more than 1000 h aging in air.
研究领域:
材料科学
·
光伏技术
·
能源研究
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Boxiang Gao,Yan Yan,Shuai Zhang,Zenghui Wu,You Meng,Yuxuan Zhang,Weijun Wang,Yi Shen,Siliang Hu,Bowen Li,He Shao,Pengshan Xie,SenPo Yip,Johnny C. Ho
Van der Waals (vdWs) p–n junctions assembled from 2D materials offer enhanced flexibility for creating versatile electronic and optoelectronic devices, attracting significant interest. However, the lack of reliable methods to produce high-quality p-type 2D semiconductors, especially patterned p-type channels, remains a major challenge for progress in the field. Here, a precise substitutional doping strategy for 2D semiconductors is presented, enabling the production of millimeter-scale WS 2 single-crystal thin films with tailored p-type and n-type properties. This advancement supports the fabrication of high-performance WS 2 -based p-type and n-type field-effect transistor (FET) miniaturized arrays with near-ohmic contact. Building on this progress, a WS 2 van der Waals homojunction p-n array demonstrating distinct anti-ambipolar behavior and excellent rectification characteristics is developed. In self-powered photodetection mode, leveraging the strong coupling of the vdWs homojunction interface, the device achieves an exceptional photovoltaic effect with a high specific detectivity of 3.4 × 10 10 Jones and a fast response time of 400 µs. The development of WS 2 p-n homojunction arrays presents immense potential for advancing next-generation logic electronics and optoelectronic devices, opening new avenues for large-scale industrial applications.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2025
·Vol. 16
·期 1
·1-12
·
IF 15.7
Zheng Yizhen,Lin Xing,Li Jiongzhao,Chen Jianan,Wu Wenhao,Song Zixuan,Gao Yuan,Hu Zhuang,Wang Huifeng,Ye Zikang,Qin Haiyan,Peng Xiaogang
Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Yan Zhao,Luyi Yang,Yunxing Zuo,Zhibo Song,Fang Liu,Ke Li,Feng Pan
Employing conductive binders in silicon (Si) anode has been considered as a fundamental solution to the pulverization of Si particles. Therefore, it is still a great challenge to improve the charge transfer capability of the conductive binder. Herein, a copolymer (PFPQ-COONa) is synthesized, characterized, and electrochemically tested as conductive binder for Si anode. It is found that PFPQ-COONa exhibits not only excellent cycling stability, but also satisfactory rate performance with relatively high areal loading, which outperforms currently reported single-component conductive binders. The superior electrochemical performance can be attributed to the molecular-level contact between binder and Si particles and to the enhanced intrinsic conductivity of PFPQ-COONa at reductive potential. This method provides a fresh perspective to design and develop conductive binder for high-capacity battery anode.
研究领域:
材料科学
·
电化学
·
电池技术
✓ 已验证
DOI
PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2020
·
IF 10.652
Xianhua Mao,Ziyu Li,Yijia Liu,Xiuxiu Nie,Benzhang Li,Qinglin Jiang,Chunmei Gao,Yuan Gao,Lei Wang
Recently, single-walled carbon nanotubes (SWCNTs)-based thermoelectric (TE) materials have received much interest owing to their advantages, such as high electrical conductivity and flexibility, as well as their ability to be easily tuned to exhibit p-type or n-type characteristics by the addition of redox reagents. Compared with the numerous p-type composites, less n-type agents have been reported. Borane-nitrogen derivatives (BNs) have been widely used as reducing agents; however, little attention has been paid on their TE performance. As the reducing ability of BNs can be tuned by the basicity and steric hindrance of the nitrogen containing derivatives, herein, pyridineborane (PYB), morpholineborane (MPB) and N , N -diethylanilineborane (DEANB) were investigated as n-type dopants of SWCNTs by simply dispersing each of them with SWCNTs in various solvents. The results suggested the structures of the borane complexes and their reducing ability affect the TE properties greatly. Among them, SWCNT/PYB displayed the best performance at all the investigated temperatures, with power factors ranging from 193.6 μW m −1 K −2 to 223.8 μW m −1 K −2 , which are the highest PF values reported to date based on boron containing SWCNT composites. In addition, the TE devices containing five p-n junctions were also combined. SWCNT/PYB exhibited a higher open-circuit voltage (28.8 mV) and output power (1.15 μW) than SWCNT/NaBH 4 (23.7 mV, 0.79 μW) at the same conditions. Our results suggest that organic boron compounds can be developed as good agents for boosting the performance of n-type TE materials.
研究领域:
材料科学
·
物理化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Ya-Nan Zhang,Shuai Feng,Shi-Hua Zhao,Bo-Wen Gao,Cheng-Xiang Wang
Perovskite solar cells (PSCs) have emerged as a leading photovoltaic technology due to their high efficiency and low cost. Even though they have developed rapidly since their inception, with efficiencies of over 26%, inverted PSCs face challenges such as nonradiative recombination and ion migration. Surface treatment, especially the utilization of organic compounds, has improved efficiency and stability by optimizing the perovskite–charge transport layer interface. Herein, we report a facile and effective strategy by introducing 2,2′-bipyridyl to modify the surface of perovskite, achieving a power conversion efficiency of 24.43% with increasing open-circuit voltage and fill factor and good repeatability on multiple devices. We reveal that the 2,2′-bipyridyl molecule can chelate lead ions on the surface of perovskite, effectively suppressing nonradiative recombination. Furthermore, this modification can induce surficial n-doping to refine the energy level alignment, thereby minimizing charge transport losses. Additionally, the device maintained over 92% of the initial efficiency after 1000 h of operation at the maximum power point under continuous illumination. This surface chelation and defect passivation strategy employing 2,2′-bipyridyl offers a promising avenue for exploring the details of potential long-term degradation mechanisms and the development of commercially viable high-performance p-i-n PSCs.
研究领域:
材料科学
·
光伏技术
·
化学工程
✓ 已验证
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Pengna Wang,Ying Sun,Jie Li,Guanqun Zhu,Xueqin Zhang,Hong Yang,Baoping Lin
Novel monomer TPACz containing carbazole and triphenylamine active groups was synthesized. P(TPACz)/WO 3 coralloid porous electrochromic electrode material were prepared by electropolymerization . The P(TPACz)/WO 3 coralloid porous composite electrode material exhibited independent electrochromic properties in the positive potential range (0−1.7 V) (yellow at neutral state and blue at oxidation state) and negative potential range (−1.8−0 V) with the color of the film changing from yellow to dark blue. At the same time, the electrochemical properties of P(TPACz)/WO 3 composite material ware tested. It is noteworthy that the P(TPACz)/WO 3 coralloid porous electrochromic composite electrode materials exhibit both n-type and p-type doped electrochemical properties . Especially, P(TPACz)/WO 3 exhibit excellent capacitive properties in the n-doped state. According to its GCD curve of P(TPACz)/WO 3 nanocomposite electrode material, the area ratio capacitance is 1.94 mF cm −2 in the positive potential window of 0−0.8 V. And the area ratio capacitance is 33.3 mF cm −2 in the negative potential window of −1.8−0 V. Therefore, the design and effects of the nanocomposite material can broaden application range of electrochromic electrode materials and provide new strategies for energy saving material design.
研究领域:
材料科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2021
·Vol. 31
·期 30
·2102768
·
IF 18.808
Huan Wei,Ping-An Chen,Jing Guo,Yu Liu,Xincan Qiu,Huajie Chen,Zebing Zeng,Thuc-Quyen Nguyen,Yuanyuan Hu
Doping is a powerful technique for tuning the electrical properties of organic semiconductors (OSCs). Although numerous studies are performed on OSC doping, thus far only a few n-type dopants have been developed. Herein, two low-cost nucleophilic organic bases are reported, namely 1,5,7-Triazabicyclo [4.4.0] dec-5-ene (TBD) and 1,5-Diazabicyclo [4.3.0] non-5-ene (DBN) for n-doping of OSCs. The two dopants are found to significantly enhance the electrical conductivity of OSCs. In particular, compared to the classic n-dopant 4-(2,3-Dihydro-1,3-dimethyl-1 H -benzimidazol-2-yl)- N , N -dimethylbenzylamine ( N -DMBI), DBN results in significantly higher conductivity and also lower activation energy in N2200 films, indicating its high doping performance. The utilization of the n-dopants for improving device performance and controlling the device polarity of organic field-effect transistors are demonstrated. Furthermore, these dopants are employed for fabricating organic thermoelectric devices, and the power factor value of DBN-doped N2200 films is found to be about 1.6 times higher than that of N -DMBI-doped films. These results show the feasibility of using low-cost organic bases as efficient n-dopants and demonstrate their promising applications in organic electronics.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Advanced Materials Technologies
·
2020
·Vol. 5
·期 9
·2000288
·
IF 5.969
Ruisi Chen,Junhui Tang,Yajie Yan,Ziqi Liang
Carbon nanotubes (CNTs) have been demonstrated as promising candidates for thermoelectrics (TEs) owing to their excellent electrical and mechanical properties. Here a new dopant to obtain flexible n-type CNT-based TE films from solution is reported. By doping single-walled carbon nanotubes (SWCNTs) with tetrabutylammonium bromide (TBAB), p-type nanotubes can be successfully converted to n-type form, which is confirmed by both Raman and X-ray photoemission spectroscopy (XPS) spectra. Furthermore, the influences of doping concentration and dispersion medium on TE properties are investigated. The optimal n-type SWCNT films fabricated in N , N -dimethylformamide (DMF) solvent exhibit an impressive power factor of 339 µW m −1 K −2 and excellent air stability by less than 10% variation of Seebeck coefficient during 192 h at room temperature without encapsulation, both of which are among the hitherto highest reported. This work sheds light on the interaction between TBAB molecules and SWCNTs in different dispersion media and offers a guideline for efficient n-doping of SWCNT based TE materials.
研究领域:
材料科学
·
物理化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Rongfeng Tang,Xiaomin Wang,Chenhui Jiang,Shiang Li,Weifeng Liu,Huanxin Ju,Shangfeng Yang,Changfei Zhu,Tao Chen
Sb2S3 is a kind of new light-absorbing material possessing high stability in ambient environment, high absorption coefficient in the visible range, and abundant elemental storage. To improve the power conversion efficiency of Sb2S3-based solar cells, here we control the defect in Sb2S3 absorber films. It is found that the increase of sulfur vacancy is able to upgrade photovoltaic properties. With the increase in sulfur vacancy, the carrier concentrations are increased. This n-type doping gives rise to an upshift of the Fermi level of Sb2S3 so that the charge transport from Sb2S3 to the electron selection material becomes dynamically favorable. The introduction of ZnCl2 in film fabrication is also found to regulate the film growth for enhanced crystallinity. Finally, the photovoltaic parameters, short-circuit current density, open-circuit voltage, and the fill factor of the device based on the Sb2S3 film are all considerably enhanced, boosting the final power conversion efficiency from 5.15 to 6.35%. This efficiency is the highest value in planar heterojunction Sb2S3 solar cells and among the top values in all kinds of Sb2S3 solar cells. This research provides a fundamental understanding regarding the properties of Sb2S3 and a convenient approach for enhancing the performance of Sb2S3 solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry A
·
2018
·Vol. 6
·期 39
·19030-19037
·
IF 9.931
Xuejiang Cheng,Xin Wang,Guangming Chen
Obtaining n-type candidates with high performance is a great challenge for organic and organic/inorganic composite thermoelectric (TE) materials. Here, we report a convenient and highly tunable way to achieve flexible TE films by doping single-walled carbon nanotubes (SWCNT) with common alkylammonium cationic surfactants. Using a simple solution mixing procedure, pristine p-type SWCNT can be effectively changed to n-type form within a short period. The n-type doping mechanism has been investigated by Raman and XPS spectra. The effects of dopant content, dispersion medium as well as alkyl chain length and anion type of the alkylammonium cationic surfactants on the composite TE performance are systematically investigated. The TE performances of both the n-type TE materials and the corresponding device are among the highest so far. The highest power factor at room temperature reaches 185.7 ± 8.5 μW m−1 K−2. Furthermore, the TE device consisting of five couples of the pristine SWCNT (p-type) and the doped SWCNT (n-type) films generates a high open circuit voltage and a large output power of 37.4 mV and 6.7 μW, respectively, at a temperature gradient of 80 K. The present study opens a convenient and highly tunable avenue to exploit promising n-type TE composites by doping SWCNT with common alkylammonium cationic surfactants.
研究领域:
材料科学
·
热电材料
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）