ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Boxiang Gao,Yan Yan,Shuai Zhang,Zenghui Wu,You Meng,Yuxuan Zhang,Weijun Wang,Yi Shen,Siliang Hu,Bowen Li,He Shao,Pengshan Xie,SenPo Yip,Johnny C. Ho
Van der Waals (vdWs) p–n junctions assembled from 2D materials offer enhanced flexibility for creating versatile electronic and optoelectronic devices, attracting significant interest. However, the lack of reliable methods to produce high-quality p-type 2D semiconductors, especially patterned p-type channels, remains a major challenge for progress in the field. Here, a precise substitutional doping strategy for 2D semiconductors is presented, enabling the production of millimeter-scale WS 2 single-crystal thin films with tailored p-type and n-type properties. This advancement supports the fabrication of high-performance WS 2 -based p-type and n-type field-effect transistor (FET) miniaturized arrays with near-ohmic contact. Building on this progress, a WS 2 van der Waals homojunction p-n array demonstrating distinct anti-ambipolar behavior and excellent rectification characteristics is developed. In self-powered photodetection mode, leveraging the strong coupling of the vdWs homojunction interface, the device achieves an exceptional photovoltaic effect with a high specific detectivity of 3.4 × 10 10 Jones and a fast response time of 400 µs. The development of WS 2 p-n homojunction arrays presents immense potential for advancing next-generation logic electronics and optoelectronic devices, opening new avenues for large-scale industrial applications.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
产品关联
DOI
高影响因子
Energy Technology
·
2020
·Vol. 8
·期 5
·1901171
·
IF 3.404
Pengqiang Yuan,Jihuai Wu,Weihai Sun,Qianjin Zhu,Mingjing Zhang,Jinjun Zou,Xiaobing Wang,Xuping Liu,Yuqian Yang,Zhang Lan
The p-type dopant of spiro-OMeTAD has been identified as a rational strategy for the enhancement of the hole transport ability in perovskite solar cells (PSCs). Herein, to enhance the conductivity and hole-extraction ability of spiro-OMeTAD, a low-cost and facile method is developed by introducing iodine into the hole transport materials. Morphology observation, energy gap characterization, and photoelectrochemical measurements indicate that as a mild Lewis acid, oxidant, and p-type dopant, iodine moderately oxidizes spiro-OMeTAD, optimizes the energy match with perovskite, mitigates the trap state density, interface resistance, and carrier recombination, and improves the hole-extraction ability and carrier transport capacity. Consequently, a planar PSC based on the spiro-OMeTAD doped with 8 wt% iodine achieves a champion power conversion efficiency (PCE) of 19.69%. Conversely, the device with pristine spiro-OMeTAD gets an efficiency of 18.04%. This work indicates a potential application of iodine as a promising p-type dopant for spiro-OMeTAD in PSCs.
研究领域:
材料科学
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能源科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2021
·Vol. 56
·期 21
·12326-12335
·
IF 4.22
Qu Junfeng,Xu Shuhong,Liu Fan,Wang Zhuyuan,Shao Haibao,Cui Yiping,Wang Chunlei
Abstract Compared with widely studied lead halide perovskite, copper halide perovskite is toxic-free and combines better stability with comparable photoluminescence quantum yield. Cation doping has proven to be an effective way to manipulate optical and electronic properties of perovskite. Unlike lead halide perovskite able to act as the host of different kinds of dopant, copper halide perovskite acting as host material is still a great challenge. Herein, Mn was successfully doped into Cs \(_3\) Cu \(_2\) I \(_5\) under room temperature via solid-state reaction. In addition to original self-trapped emission of Cs \(_3\) Cu \(_2\) I \(_5\) at 445 nm, Mn dopant introduced characteristic emission at \(\sim \) 550 nm and realized dual color emission tuned by feeding ratio, extending chroma of Cs \(_3\) Cu \(_2\) I \(_5\) in blue region. Meanwhile, ultraviolet photo-electron spectra results confirmed that Mn \(^{2+}\) ion replacing Cu \(^+\) resulted in p-type doping in Cs \(_3\) Cu \(_2\) I \(_5\) . The as-prepared Mn:Cs \(_3\) Cu \(_2\) I \(_5\) microcrystals show excellent stability with almost unchanged PL intensity within 15 days. Graphical abstract
Synthesis of p-type Mn:Cs3Cu2I5 with dual-color emission through room-temperature grinding method.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
SOLAR ENERGY
·
2018
·
IF 4.374
Xichuan Yang,Weihan Wang,Yanyun Zhang,Licheng Sun
P-type doping is a rational strategy for the enhancement of hole transporting properties of the organic semiconductors as well as the device performance of organic photo-electric devices. We originally introduce a stable and solution processed p-type dopant based on N-oxoammonium salts termed 2,2,6,6-tetramethyl-1-oxopiperidinebromide salt (TEMPO-Br) for 2,2′,7,7′-tetrakis(N, N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene (Spiro-OMeTAD) based solid state dye sensitized solar cells (ssDSC). By introducing TEMPO-Br doped Spiro-OMeTAD and a commercialized D-π-A sensitizer into ssDSCs, a promising device performance of 6.83% is achieved under simulated AM 1.5G solar irradiation (100 mW cm −2 ), which is significantly better than the control devices (∼1.7 times). The doping effect of TEMPO-Br on the photophysical and electrochemical properties of Spiro-OMeTAD, solid state device performance, cationic dye regeneration kinetics and preliminary long-term stability have been systematically investigated. This work indicates a potential application of N-oxoammonium salts as chemical P-type dopants for triphenylamine based hole transporting materials in solid state photo-electric devices.
研究领域:
材料科学
·
光电化学
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Pengna Wang,Ying Sun,Jie Li,Guanqun Zhu,Xueqin Zhang,Hong Yang,Baoping Lin
Novel monomer TPACz containing carbazole and triphenylamine active groups was synthesized. P(TPACz)/WO 3 coralloid porous electrochromic electrode material were prepared by electropolymerization . The P(TPACz)/WO 3 coralloid porous composite electrode material exhibited independent electrochromic properties in the positive potential range (0−1.7 V) (yellow at neutral state and blue at oxidation state) and negative potential range (−1.8−0 V) with the color of the film changing from yellow to dark blue. At the same time, the electrochemical properties of P(TPACz)/WO 3 composite material ware tested. It is noteworthy that the P(TPACz)/WO 3 coralloid porous electrochromic composite electrode materials exhibit both n-type and p-type doped electrochemical properties . Especially, P(TPACz)/WO 3 exhibit excellent capacitive properties in the n-doped state. According to its GCD curve of P(TPACz)/WO 3 nanocomposite electrode material, the area ratio capacitance is 1.94 mF cm −2 in the positive potential window of 0−0.8 V. And the area ratio capacitance is 33.3 mF cm −2 in the negative potential window of −1.8−0 V. Therefore, the design and effects of the nanocomposite material can broaden application range of electrochromic electrode materials and provide new strategies for energy saving material design.
研究领域:
材料科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Lihui Liu,Ruimin Dong,Danqing Ye,Yao Lu,Pengfei Xia,Lingling Deng,Yu Duan,Kun Cao,Shufen Chen
Graphene is a promising flexible transparent electrode, and significant progress in graphene-based optoelectronic devices has been accomplished by reducing the sheet resistance and tuning the work function. Herein, phosphomolybdic acid (PMA) is proposed as a novel p-type chemical dopant for graphene, and the optical and electrical properties of graphene are investigated systematically. As a result, the monolayer graphene electrode with lower sheet resistance and work function are obtained while maintaining a high transmittance. The Raman spectrum proves the p-type doping effect of PMA on graphene, and the X-ray photoelectron spectroscopy results reveal the mechanism, which is that the electrons transfer from graphene to PMA through the Mo–O–C bond. Furthermore, using the PMA-doped graphene anode, organic and perovskite light-emitting diodes obtained the maximum efficiencies of 129.3 and 15.6 cd/A with an increase of 50.8 and 36.8% compared with the pristine counterparts, respectively. This work confirms that PMA is a potential p-type chemical dopant to achieve an ideal graphene electrode and demonstrates the feasibility of PMA-doped graphene in the practical application of next-generation displays and solid-state lighting.
研究领域:
材料科学
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电子工程
·
光学
✓ 已验证
DOI
高影响因子
Journal of Cleaner Production
·
2020
·
IF 7.246
Li Ping Liao,Yan Qing Yao,Gang Wang,Cun Yun Xu,De Bei Liu,Guang Dong Zhou,Yuan Xin Zhong,Qun Liang Song
Hot carriers in hybrid perovskite have been proven to have eminent properties with long carrier cooling time and long carrier migration distance. The invention of the internally photoemitted hot carrier (IPHC) solar cell recently makes it possible to utilize the hot electrons in CH 3 NH 3 PbI 3 perovskite and capture their excess energies under steady state illumination. How to further improve the efficiency of IPHC cells is challenging and crucial to demonstrate their effectiveness. In this work, sodium iodide (NaI) is added into the CH 3 NH 3 PbI 3 precursor solution for inducing a P-type doping and downshifting its Fermi level. The lowered energy barrier at the interface of Au/doped CH 3 NH 3 PbI 3 promotes the hot electron extraction, thereby enhancing the power conversion efficiency of IPHC devices. The FTO/TiO 2 /Au/Na + -doped MAPbI 3 construction with considerable photocurrent would be an alternative approach for light-to-electricity conversion.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子
RSC Advances
·
2015
·Vol. 5
·期 25
·19020-19026
·
IF 3.84
Feng-Xia Liang,Deng-Yue Zhang,Yi-feng Zou,Han Hu,Teng-Fei Zhang,Yu-Cheng Wu,Lin-Bao Luo
In this study, we present a simple oxide assisted p-type doping of Si nanostructures by evaporating a mixed powder composed of SiB6 and SiO. It was found that Si nanoribbons (Si NRs) which can be obtained at high SiB6 content, will give way to Si nanowires (Si NWs) when the content of SiB6 in the mixed powder was reduced. According to our transport measurement of field effect transistors (FETs) assembled on individual Si nanostructures, the as-prepared Si nanostructures with different boron doping levels all exhibit typical p-type conduction characteristics. Additionally, the electrical conductivity of the Si nanostructures can be tuned over 7 orders of magnitude from 8.98 × 102 S cm−1 for the highly doped sample to 3.36 × 10−5 S cm−1 for the lightly doped sample. We also assembled a nano-photodetector based on monolayer graphene and the as-prepared Si nanostructures, which exhibits ultra-sensitivity to 850 nm near infrared light (NIR) illumination with a nanosecond response speed (τrise/τfall: 181/233 ns). The generality of the above results suggest that the Si nanostructures are promising building blocks for future electronic and optoelectronic device applications.
研究领域:
材料科学
·
电子工程
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2022
·
IF 16.744
Shibo Wang,Fengxian Cao,Pengxu Chen,Ruowei He,Anling Tong,Zhang Lan,Peng Gao,Weihai Sun,Jihuai Wu
Combined with the superb moisture and thermal stability of two-dimensional (2D) perovskites and the excellent photoelectronic features of three-dimensional (3D) perovskites, building 3D/2D structure has been proved to be an auspicious way to improve both power conversion efficiency (PCE) and durability of perovskite solar cells (PSCs). In this work, cyclohexylammonium bromide (CMABr) as p-dopant is introduced into hole transport layer (HTL) to form 3D/2D heterostructure perovskite bilayer. It is confirmed that the formation of 2D perovskite interlayer comes from the reaction between the excess PbI 2 on the surface of 3D perovskite and CMABr on the bottom of HTL, which served as moisture barrier layer to enhance the device stability. The exotic CMA + and Br − ions could insert the ABX 3 perovskite lattice to compensate A-site cation and X-site vacancies, which reduced the undesirable non-radiative recombination centers. Owing to the p-type doping, the more uniform morphology, down-shifted energy levels and improved electrical properties were obtained. Consequently, the CMABr-doped PSCs based on triple-cation (Cs + , MA + and FA + ) perovskite and double-cation (MA + and FA + ) perovskite produce maximum PCEs of 21.78 % and 23.56 %, respectively, as well as remarkable long-term device stability. The results demonstrate a novel pathway to construct 3D/2D stacking structure for highly efficient PSCs with decent stability.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Zeyulin Zhang,Dinghe Liu,Yiru Yan,Liru Zeng,Hao Chen,Qingwen Song,Dazheng Chen,Chunxiang Zhu,Chunfu Zhang,Yuming Zhang,Yue Hao
Gallium oxide (Ga 2 O 3 ) film exhibiting the solar-blind absorption cutoff characteristic holds considerable potential for application in UV photodetectors . The material defects in the device will introduce the recombination region for the photodetector, especially at the interface of the Ga₂O₃ heterojunction . The photogenerated carriers , generated within the Ga 2 O 3 film, will inevitably be influenced by these high recombination centers during their transportation. Avoiding or minimizing this region can improve the performance of the photodetector. The p-n junction, with its depletion region , generates an electric field that drives the carriers away from the recombination region. However, due to the Ga 2 O 3 p-type doping difficulty, our work focuses on the growth of single-crystal NiO/β-Ga₂O₃ films by Mist-CVD and the fabrication of field-controlled photodetectors. The hole concentration in the NiO film is adjusted by doping with different concentrations of Li⁺. Compared with a photodetector without the NiO interlayer, the performance of the photodetector with the structure of NiO (1 % Li⁺-doped)/β-Ga₂O₃ exhibits a significant improvement, which achieved the maximum responsivity of 1002.5 A/W, and a high peak detectivity of 3.31 × 10 15 Jones.
研究领域:
半导体物理
·
光电材料
·
凝聚态物理
·
薄膜器件
·
紫外探测技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2025
·
IF 9.7
Bao-Hui Shao,Tong-Yu Li,Wen-Yi Sun,Ke Hu,Chun-Hao Chang,Xin-Yi Luo,Qing-Xin Meng,Wen-Hao Geng,Di Zhang,Hong-Zhang Geng
Recent industrial advancements have accelerated the development of thermoelectric devices for waste heat recovery and energy conversion. The fabrication of both n-type and p-type thermoelectric materials from the same substance has attracted broad research interest. In this study, p-type and n-type thermoelectric films were prepared using single-walled carbon nanotubes (SWCNTs) and Cu 2 O, with only minor differences in processing and composition. The two types of films exhibited distinct properties, which correlated with different crystal morphologies of Cu₂O: a rice-like microstructure in the p-type material and spherical microstructure in the n-type material. After p-type doping with Cu 2 O, the optimal Seebeck coefficient increased from 16 μV·K −1 to 41.2 μV·K −1 , while the electrical conductivity decreased from 67,891 S·m −1 to 2338.5 S·m −1 . The p-type SWCNT/Cu 2 O film achieved a maximum ZT value of 0.018, approximately 60 times higher than that of pure SWCNTs. For the n-type doped film, the Seebeck coefficient changed from 16 μV·K −1 to −17.6 μV·K −1 , and the electrical conductivity decreased to 27,828.5 S·m −1 , yielding a maximum ZT of 0.012—about 40 times higher than pure SWCNTs. A device consisting of six pairs of p-type and n-type films generated a voltage of up to 34.56 mV at a temperature difference of 100 K, demonstrating excellent thermoelectric performance. Both composite films also showed outstanding electrothermal properties: the p-type film reached 295 °C at 7 V with stable heating at 6 V, while the n-type film reached 335 °C at 6 V and exhibited good stability at 3.5 V. This work offers a simple and effective strategy for designing high-performance p-type and n-type thermoelectric materials from the same base system.
研究领域:
材料科学
·
凝聚态物理
·
纳米科技
·
能源材料
·
热电转换
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Yang-Wei Wang,Yu Wang,Hao Liang,Yi-Xin Zhang,Jing Feng,Zhen-Hua Ge
Bismuth telluride-based materials has been applied in thermoelectric cooling wildly, but the properties still can be further enhanced by doping, microstructure controlling and compositing strategies. Herein, we demonstrate an anomalous doping strategy in (Bi, Sb) 2 Te 3 (BST) materials, where the strong n type dopant of PbBr 2 acts as p-type dopant, introducing holes in BST materials. The anomalous doping is attributed to the dissolution of Pb and Br elements into the matrix in a non-stoichiometric ratio, with Pb predominantly occupying Sb vacancies and Br enriching the in-situ generated Sb 2 O 3 , resulting in the increased hole concentration and improved electrical conductivity. The maximum power factor (PF) ultimately increases to 3972 μW m −1 K −2 for the 0.3 mol% PbBr 2 doped BST sample. Moreover, the enhanced multi-scale wavelength phonon scattering centers cause the lattice thermal conductivity fall to 0.52 W m −1 K −1 . Finally, the peak ZT is effectively enhanced to 1.3 at 323 K, which is 22 % higher than that of pristine sample. Furthermore, a direct conversion efficiency of 4.6 % is achieved in a single 0.3 mol% PbBr 2 -doped BST leg at a temperature gradient of ΔT = 200 K. Thus, this study underscores the anomalous PbBr 2 doping in Bi 0.42 Sb 1.58 Te 3 , promoting the wider application of BST-based materials.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电转换
·
半导体掺杂
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）