Energies
·
2024
·Vol. 17
·期 2
·406
·
IF 3
Musa Abubakar Bilya,Aleksey Nabok,Yashodhan P. Purandare,Ashfaque E. Alam,I. M. Dharmadasa
In this study, a two-electrode electrodeposition technique was employed to grow thin films of antimony selenide (Sb2Se3) on glass/fluorine-doped tin oxide (FTO) substrates. The highest quality thin films were consistently obtained within the range of 1600 mV to 1950 mV. Subsequent electrodeposition experiments were conducted at discrete voltages to produce various layers of thin films. Photoelectrochemical cell (PEC) measurements were performed to characterize the semiconductor material layers, leading to the identification of both p-Type and n-Type conductivity types. Optical absorption spectroscopic analysis revealed energy bandgap values ranging from 1.10 eV to 1.90 eV for AD-deposited Sb2Se3samples and 1.08 eV to 1.68 eV for heat-treated Sb2Se3samples, confirming the semiconducting nature of the Sb2Se3material. Additionally, other characterization techniques, including X-ray diffraction analysis, reveal that the AD-deposited layers are almost amorphous, and heat treatment shows that the material is within the orthorhombic crystalline system. Heat-treated layers grown at ~1740 mV showed highly crystalline material with a bandgap nearing the bulk bandgap of Sb2Se3. Raman spectroscopy identified vibrational modes specific to the Sb2Se3phase, further confirming its crystallinity. To explore the thin-film morphology, Scanning Electron Microscopy (SEM) was employed, revealing uniformly deposited material composed of grains of varying sizes at different voltages. Energy Dispersive X-ray analysis (EDX) confirmed the presence of antimony and selenium in the material layers.
研究领域:
材料科学
·
半导体物理
·
太阳能电池
✓ 已验证
DOI
高影响因子
JOURNAL OF SOLID STATE CHEMISTRY
·
2017
·
IF 2.299
Misganaw Alemu Zeleke,Dong-Hau Kuo,Osman Ahmed Zelekew,Albert Daniel Saragih
Ge-substituted Cu 2 Sn(S,Se) 3 bulks with Cu 2 (Sn 1- x Ge x )(S,Se) 3 formula at x = 0, 0.25, 0.50, 0.75, and 1.0 were synthesized by reactive liquid phase sintering , where the heating process was held at 200 °C for 20 min before reaching the sintering temperature of 600 °C for 30 min. In the presence of volatile Sb 2 S 3 sintering aid , the effects on densification , grain boundary, crystalline size, and electrical properties of Ge-substitution were investigated. Cu 2 (Sn 1- x Ge x )(S,Se) 3 showed p-type behavior for all x values. It was found that the mobility was increased sharply and carrier concentration was decreased rapidly as the x -value was increased. The electrical conductivities were found to be 14.0, 22.7, 36.8, 126, and 153 S/cm at x = 0, 0.25, 0.50, 0.75, and 1.0, respectively. X-ray diffraction (XRD) peaks were shifted to the higher angle and band gaps increased upon successive increasing of the Ge/[Ge+Sn] fraction being 1.19, 1.21, 1.22, 1.24, and 1.26 eV at x = 0, 0.25, 0.50, 0.75, and 1.0, respectively. The studies of Ge-x-CTSSe bulks were based on Ge Sn defects and supported by the data of morphological, structural, electrical, and optical properties .
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2025
·
IF 7.9
Huiying Cheng,Jingchang Sun,Siwen Liu,Furong Cao,Liuting Shan,Zijiang Yang,Xiaofan Cui,Jiaxu Zhao,Zhen Qiao,Qiuju Feng
Low-grade heat (<100 °C) is abundant and ubiquitous in the environment, and the recovery of low-grade heat energy will be of great significance for the energy supply and the improvement of the environment. Low-cost and effective technologies for transforming low-grade heat into electricity are urgently needed. Thermocell (TEC) based on REDOX couples has become a promising technology for low-grade heat harvesting due to its advantages of low cost, scalability, and intrinsic high thermopower. To enhance its performance, different types of TECs need to incorporate various additives into the REDOX couples. However, there is currently no identical additive that effectively enhances the performance of both P-type and N-type TECs. In this paper, carboxylated chitosan is used as an identical additive, resulting in an increase in the Seebeck coefficient of P-type and N-type TECs by 115.33 % and 53.25 %, respectively. Furthermore, we introduce a novel sandwich-structured packing technique featuring a configuration of Metal/PET film/Carbon felt (MPC) for TEC. This approach effectively reduces both the cost and weight of the TEC, while the MPC structure further enhances their performance. The TEC can be scaled up to power electrical devices. Our achievement provides an effective strategy for harvesting low-grade heat energy.
研究领域:
能源材料
·
环境科学
✓ 已验证
产品关联
DOI
高影响因子
Frontiers in Materials
·
2019
·
IF 2.689
Xie Lijuan,Li Zhong,Sun Linchao,Dong Baoxia,Fatima Qawareer,Wang Zhe,Yao Zhengjun,Haidry Azhar Ali
Titanium dioxide is considered as one of the potential candidates for high-temperature gas sensing applications due to its excellent sensitivity and stability. However, its practical use as a gas sensor under elevated conditions is limited on account of its selectivity and insufficient understanding of response conversion from n- to p-type. To this context, the present work is intended to prepare and understand the p-type response of anatase TiO2 toward H2 gas (20–1,000 ppm) at elevated temperature (500°C). Sol-gel route is adopted to facilely synthesize powders containing pure and chromium (1–10 at.%) doped TiO2 nanoparticles, which are then brushed onto substrates with already patterned inter-digitated platinum electrodes. In this work, even, the undoped TiO2 samples showed p-type gas sensing response, which then decreased with Cr doping. However, in comparison to previously reported work, the sensing characteristics of all sensors is improved. For instance, 5 at.% Cr-TiO2 showed high response (147), fast response and recovery (142/123s) time, and good selectivity to hydrogen against monoxide and methane. Despite better response values, the TiO2 based samples show instability and drift in baseline resistance; such issues were not observed for Cr-doped TiO2 samples (≥3 at.%). The powders were further analyzed by XRD, SEM, TEM, and XPS to understand the basic characteristics, p-type response and stability. Further, a plausible sensing mechanism is discussed on basis of results obtained from aforementioned techniques.
研究领域:
材料科学
·
气体传感器技术
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Boxiang Gao,Yan Yan,Shuai Zhang,Zenghui Wu,You Meng,Yuxuan Zhang,Weijun Wang,Yi Shen,Siliang Hu,Bowen Li,He Shao,Pengshan Xie,SenPo Yip,Johnny C. Ho
Van der Waals (vdWs) p–n junctions assembled from 2D materials offer enhanced flexibility for creating versatile electronic and optoelectronic devices, attracting significant interest. However, the lack of reliable methods to produce high-quality p-type 2D semiconductors, especially patterned p-type channels, remains a major challenge for progress in the field. Here, a precise substitutional doping strategy for 2D semiconductors is presented, enabling the production of millimeter-scale WS 2 single-crystal thin films with tailored p-type and n-type properties. This advancement supports the fabrication of high-performance WS 2 -based p-type and n-type field-effect transistor (FET) miniaturized arrays with near-ohmic contact. Building on this progress, a WS 2 van der Waals homojunction p-n array demonstrating distinct anti-ambipolar behavior and excellent rectification characteristics is developed. In self-powered photodetection mode, leveraging the strong coupling of the vdWs homojunction interface, the device achieves an exceptional photovoltaic effect with a high specific detectivity of 3.4 × 10 10 Jones and a fast response time of 400 µs. The development of WS 2 p-n homojunction arrays presents immense potential for advancing next-generation logic electronics and optoelectronic devices, opening new avenues for large-scale industrial applications.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
产品关联
DOI
高影响因子
Frontiers in Chemistry
·
2020
·
IF 3.693
Li Yujiao,Li Chen,Yu Huanqin,Yuan Beilei,Xu Fan,Wei Haoming,Cao Bingqiang
To regulate the optical and electrical properties of the crystals and films of the intrinsic methylammonium lead iodide (CH3NH3PbI3), we dope them with sodium (Na) by selecting sodium iodide (NaI) as a dopant source. The highly conductive p-type sodium-doped CH3NH3PbI3 (MAPbI3: Na) perovskite single crystals and thin films are successfully grown using the inverse temperature crystallization (ITC) method and antisolvent spin-coating (ASC) method, respectively. With the increase of Na+ doping concentration, the grain size of the film increases, the surface becomes smoother, and the crystallinity improves. Hall effect results demonstrate that both the MAPbI3: Na thin films and single crystals change their quasi-insulating intrinsic conductivity to a highly conductive p-type conductivity. The room-temperature photoluminescence (PL) peaks of doped MAPbI3 films slightly blue shift, while the photocarriers' lifetime becomes longer. The optical fingerprints of the doped levels in MAPbI3: Na perovskites can be identified by temperature-dependent PL. Obvious fingerprints of Na-related acceptor (A0X) levels in the doped MAPbI3: Na were observed at 10 K. These results suggest that sodium doping is an effective way to grow highly conductive p-type MAPbI3 perovskites.
研究领域:
材料科学
·
物理化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Energy Technology
·
2020
·Vol. 8
·期 5
·1901171
·
IF 3.404
Pengqiang Yuan,Jihuai Wu,Weihai Sun,Qianjin Zhu,Mingjing Zhang,Jinjun Zou,Xiaobing Wang,Xuping Liu,Yuqian Yang,Zhang Lan
The p-type dopant of spiro-OMeTAD has been identified as a rational strategy for the enhancement of the hole transport ability in perovskite solar cells (PSCs). Herein, to enhance the conductivity and hole-extraction ability of spiro-OMeTAD, a low-cost and facile method is developed by introducing iodine into the hole transport materials. Morphology observation, energy gap characterization, and photoelectrochemical measurements indicate that as a mild Lewis acid, oxidant, and p-type dopant, iodine moderately oxidizes spiro-OMeTAD, optimizes the energy match with perovskite, mitigates the trap state density, interface resistance, and carrier recombination, and improves the hole-extraction ability and carrier transport capacity. Consequently, a planar PSC based on the spiro-OMeTAD doped with 8 wt% iodine achieves a champion power conversion efficiency (PCE) of 19.69%. Conversely, the device with pristine spiro-OMeTAD gets an efficiency of 18.04%. This work indicates a potential application of iodine as a promising p-type dopant for spiro-OMeTAD in PSCs.
研究领域:
材料科学
·
能源科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Jun Xu,Xiaoqian Qu,Wenjie Yang,Yingqi Luan,Xinsheng Ding,Yingshuai Wang,Lulu Guo,Ke Wu,Zhimin Yang
The development of acetone gas sensors with high sensitivity, low detection limits and scalability holds significant importance for industrial production safety and disease diagnosis. Herein, oxygen vacancies-enriched α-Fe 2 O 3 nanoparticles (M-Fe 2 O 3 NPs) were synthesized through a novel metal-organic gel template strategy. Gas sensing experiments revealed that the prepared M-Fe 2 O 3 sensor displayed unique p-type semiconductor behavior, distinct from the n-type commercial α-Fe 2 O 3 (C-Fe 2 O 3 ) sensor. Moreover, the sensor demonstrated excellent acetone sensing performance, including high response (2.6 @ 20 ppm), low detection limit (0.5 ppm), remarkable repeatability and selectivity, even under 80% relative humidity (RH), displaying impressive response and recovery properties. The enhanced p-type sensing properties of the M-Fe 2 O 3 sensor were attributed to oxygen vacancies facilitating inversion (hole) layer formation and accelerating chemical reactions on the sensing materials surface, as evidenced by gas sensing performance data and O 2 -TPD characterization. Finally, the feasibility of preliminary diabetes diagnosis was demonstrated by detecting acetone levels in human exhaled breath. This work not only presents a straightforward approach for designing oxygen vacancies-enriched metal oxides but also has potential applications in constructing high-performance acetone sensing systems for diabetes diagnosis.
研究领域:
材料科学
·
医学
·
传感器技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2021
·
IF 8.067
Zeming Gu,Qi Wang,Xiaoqin Sun,Lingwei Lu,Yuwei Zhang,Ran Wang,Shu Jin,Yinlin Shao,Jun Qian,Xiaoxiang Xu
P-type semiconductivity has been observed in solid solution series (SrTiO 3 ) 1- x (CaCr 0.5 Nb 0.5 O 3 ) x (0.0 ≤ x ≤ 0.15), which all adopt cubic symmetry and own intense absorption in the visible light region. These solid solutions are superior H 2 evolution photocatalysts under visible light illumination (λ ≥ 400 nm). An AQE as high as 1.02 % at 420 ± 20 nm has been achieved at optimal composition (SrTiO 3 ) 0.85 (CaCr 0.5 Nb 0.5 O 3 ) 0.15 which significantly surpasses the parent compounds. Stoichiometric H 2 /O 2 production under visible light illumination has been successfully realized using Z-scheme system containing (SrTiO 3 ) 0.85 (CaCr 0.5 Nb 0.5 O 3 ) 0.15 , WO 3 and I − /IO 3 − redox couple.
研究领域:
材料科学
·
能源化学
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Piaoyun Yang,Yijing Fan,Keyang Hu,Lei Jiang,Lun Tan,Zhao Wang,Ang Li,Shulin Yang,Yongming Hu,Haoshuang Gu
The research and development of low-power-consumption and room-temperature hydrogen sensors are of great significance for the safe application of hydrogen energy. Herein, orthorhombic Nb2O5–x nanobelts are prepared through a combined procedure of hydrothermal, ion exchange, and annealing treatment in Ar. The topological transformation process results in the formation of abundant surface defects including chemical defects such as Nb4+, oxygen vacancies, and disordered microregions, which lead to the abnormal p-type conducting and hydrogen sensing behavior. Moreover, the orthorhombic Nb2O5–x nanobelts exhibit fast and sensitive room-temperature hydrogen sensing performance, which shows greater advancement than the monoclinic, tetragonal, and hexagonal Nb2O5 one-dimensional (1D) nanostructures. The response time and lowest limit of detection of the as-fabricated room-temperature sensor decrease to 28 s and 3.5 ppm, respectively. The sensor also exhibits a highly selective hydrogen response against CO, CH4, ethanol, H2S, and NH3. The hydrogen response of the Nb2O5–x nanobelts can be attributed to the redox reaction between hydrogen and preadsorbed oxygens. The defective surface structure and the prolonged dimension of the nanobelts give rise to the highly reactive surface and the suppression of the negative nanojunction effect, which greatly improves the sensing performance. The orthorhombic lattice structure can also promote gas adsorption and diffusion behavior due to its specific catalytic and pathway effect. The results of this work can be helpful for the rational design and defect engineering of the Nb2O5-based 1D nanostructures for room-temperature hydrogen sensing applications.
研究领域:
材料科学
·
传感器技术
✓ 已验证
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Boyuan Di,Xinlu Li,Xiaokun Wen,Wenyu Lei,Xinyue Xu,Wenchao Kong,Haixin Chang,Jia Zhang,Wenfeng Zhang
High-performance p-type atomically thin transistors are fundamental components in CMOS-based digital logic circuits for beyond-silicon electronics. Compared with the recent breakthrough in high-quality semimetal contacts approaching the quantum limit on n-type atomically thin channel transistors, achieving high-performance p-type analogues with high-quality contacts remains challenging, which was mainly hindered by the lack of proper high-work-function metallic electrodes with Fermi level unpinning capacity. Herein, we demonstrate that semimetal TiS2 electrodes prepared with a damage-free transfer process can be a feasible option for p-type atomically thin MoTe2 transistors. Owing to its intrinsic large work function (∼5.3 eV) and high-quality contacts with negligible Schottky barrier at the TiS2/MoTe2 interface, the scaled p-type bilayer MoTe2 transistor with 500 nm channel length and the monolayer transistor with 800 nm channel length exhibit a high on-state current (Ion) of 100 μA/μm with the on/off ratio (Ion/off) over 106 and an Ion of 68 μA/μm with the Ion/off ratio over 107, respectively. Such a demonstration will enable monolithic atomically thin MoTe2-based beyond-silicon electronics via the common CMOS technology.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Mengxuan Yu,Runze Huang,Xingchen Zhang,Xudong Hu,Xi Ran,Hang Xia,Mohan Yuan,Jianbing Zhang,Liang Gao,Jiang Tang,Xinzheng Lan
HgTe colloidal quantum dots (CQDs) have gained significant interest due to their extremely wide spectral response and excellent solution processability, making them promising candidates for the next-generation infrared photodetectors. However, the limited availability of p -type HgTe CQDs poses a significant challenge to device construction. In this study, a room-temperature process is identified – one based on a cation exchange process – for the preparation of p -type Au-doped HgTe CQDs. The resultant Au-doped HgTe CQDs exhibit tunable p -type doping, enhanced defect passivation, and improved doping homogeneity than conventional Ag-doped HgTe CQDs. By using Au-doped HgTe CQDs as the hole transport layer, high-performance p -on- n photodiodes are demonstrated, where a record external quantum efficiency (EQE) of 58.8% at ≈1.6 µm and a specific detectivity above 10 12 Jones are successfully demonstrated. This work shows the promise of heterovalent doping in CQDs for advancing infrared optoelectronic devices and is poised to pave the way for further exploration of innovative doping strategies in nanomaterials.
研究领域:
材料科学
·
光电技术
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）