文献检索

查找使用阿拉丁产品的科研文献

检索与阿拉丁产品相关的同行评审论文、DOI、PubMed 编号、期刊、作者、CAS 号及研究领域。

科研影响力快照

与阿拉丁产品相关的已发表科研成果

在搜索之前,这些指标可帮助访客快速了解产品关联科研的规模与质量。

346,364+ SCI 论文 与阿拉丁产品引用相关
2,295,288.15 总影响因子 匹配文献记录中影响因子的总和
81.20 最高期刊影响因子 匹配期刊中的最高 IF
6.63 平均期刊影响因子 匹配文献的平均 IF

参考指标 指标基于阿拉丁文献引用数据库及期刊影响因子记录。文献关联仅供科研参考,请以原始文献为准。

热门产品

视图 列表 网格

显示第1至12个,产品总数62个

设置提升方向
responsivity
IEEE ELECTRON DEVICE LETTERS · 2023 ·Vol. 44 ·期 7 ·1152-1155 · IF 4.9

Vertical SnS2/Cr–SnS2 n–n Homostructure for High-Responsivity and Fast-Response 405 nm Near-Ultraviolet Detectors

Weishuai Duan,Zhe Liu,Xinfa Zhu,Biao He,Chao Fan,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li

Near-ultraviolet (NUV) detectors based on two-dimensional (2D) materials have garnered considerable attention owing to their atomic-scale thickness, varied bandgap, and strong interaction with incident light. In this work, homostructures composed of tin disulfide/chromium–doped tin disulfide (SnS 2 /Cr–SnS 2 ) were proposed for 405 nm near-ultraviolet detectors. Afterward, superlative detectors were fabricated through the employment of micro-mechanical exfoliation and polydimethylsiloxane-assisted dry-transfer methods, anchored by the SnS 2 Cr–SnS 2 homostructures. The detectors demonstrated exceptional detection performance for 405 nm NUV radiation with a significant responsivity of $2.04\times 10^{{3}}\,\,\text {A}\cdot \text {W}^{-{1}}$ and a short response time of 8 ms, exceeding that of detectors based on most 2D materials and even commercial light detectors (Thorlabs FD11A–Si). The work presents an effective homostructure for high-performance SnS 2 -based detectors, thereby opening an opportunity for the utilization of SnS 2 in NUV detectors.

研究领域: 材料科学 · 光电子学
✓ 已验证 DOI 高影响因子
查看原文 查看 PubMed
Surfaces and Interfaces · 2025 · IF 6.3

High-performance, reliable and self-powered solar-blind photodetectors based on GQDs/α-Ga2O3 heterojunctions

Chunlin Wen,Zhenhua Tang,Tingsu Liu,Fan Qiu,Yan-Ping Jiang,Xin-Gui Tang,Yi-Chun Zhou,Xiangjun Xing,Ju Gao

Recently, Ga 2 O 3 -based devices with a wide bandgap have gained great attention in power semiconductor devices. However, Ga 2 O 3 -based devices with the substable crystalline phase and high performances need be further developed and discussed. In this work, the α-Ga 2 O 3 thin films and GQDs/α-Ga 2 O 3 heterojunctions were prepared by magnetron sputtering on the transparent FTO substrates with a buffer TiO 2 layer. And, the good self-powered deep-ultraviolet photodetection performance and mechanisms were discussed in the GQDs/α-Ga 2 O 3 /α-TiO 2 /FTO devices: its responsivity to 254 nm UV light can reach 1.72 mA/W at a bias voltage of 0 V, a normalized detection rate of 1.7 × 10 10 Jones and the light-to-dark current ratio (PDCR) of ∼1 were achieved due to the change of heterojunction energy band type from II to I. Moreover, the good self-powered deep UV photodetection for GQDs/α-Ga 2 O 3 /α-TiO 2 /FTO devices were demonstrated: a PDCR of 1.1 × 10 3 , a self-powered responsivity (R) improved by a factor of 5 to 8.7 mA/W, the rise time (τ r )/fall time (τ f ) of 86/39 ms, and a normalized detectivity (D*) with an improved magnitude of 1.3 to 2.3 × 10 11 Jones were achieved by constructing GQDs/α-Ga 2 O 3 heterojunctions on the outer surface of α-Ga 2 O 3 thin film. These results can provide a reference for the future development of Ga 2 O 3 thin film devices.

CAS / MDL: 7440-44-0
研究领域: 材料科学 · 光电子学
✓ 已验证 产品关联 DOI 高影响因子
查看原文 查看 PubMed
ACS Applied Materials & Interfaces · 2022 · IF 10.383

Polymeric Nanoreactors with Chemically Tunable Redox Responsivity

Lidong Gong,Changrong Wang,Pengcheng Xu,Jingjing Gong,Chuanda Zhu,Shiming Di,Yanglonghao Li,Yongxu Mu,Hongbin Han,Qiang Zhang,Zhiqiang Lin

Bioresponsive nanomaterials are increasingly important in a variety of applications such as disease imaging, drug delivery, and tissue engineering. However, it remains a big challenge to manipulate response efficacy of such materials for performance optimization in a highly complex milieu in vivo. Here, we developed chemically adjustable nanoreactors (CANs) with the structure of polymeric cores and albumin shells to achieve tunable redox responsivity. In vitro characterization demonstrates stable, spherical nanoparticles of the CANs with a particle size of about 50 nm. The fluorescence activation ratios of the CANs are determined by various albumin modification densities on the shell. Meanwhile, the response sensitivity of the CANs to GSH levels (0.6–4 mM) can be tuned by acid–base properties of polymeric blocks in the core. This unique tunable redox responsivity enables the CANs suitable for probe optimization in cancer imaging both in vivo and at histological levels. Overall, this study offers a new design strategy for manipulation on performance of core/shell nanoreactors or bioresponsive nanomaterials.

研究领域: 生物材料学 · 医学工程 · 分子影像学
✓ 已验证 产品关联 DOI PubMed 高影响因子
查看原文 查看 PubMed
Journal of Physical Chemistry C · 2019 · IF 4.309

Enhanced Broadband Responsivity of Ni-Doped Sb2Se3 Nanorod Photodetector

Wen Wu,Ying Li,Limin Liang,Qiuyan Hao,Jun Zhang,Hui Liu,Caichi Liu

Antimony selenide (Sb2Se3) semiconductor with a narrow band gap is regarded as an ideal candidate for the next-generation broadband photodetectors. However, the photodetectors based on the binary Sb2Se3 semiconductor suffer from low responsivity (Rλ) and external quantum efficiency due to the intrinsic low electrical conductivity. To address the issue, we introduce a low-valence Ni cation (Ni2+) into the binary Sb2Se3 ((Sb1–xNix)2Se3) nanorods synthesized by a facile hot-injection process. With increasing Ni-doping concentration, the (Sb1–xNix)2Se3 nanorods exhibit a significant increase of electrical conductivity from 4.983 × 10–5 to 4.011 × 10–4 Ω–1 m–1. The photodetector based on (Sb0.995Ni0.005)2Se3 nanorod film exhibits an excellent responsivity of 18.9 mA/W under white light illumination of 45 mW/cm2 at an applied bias voltage of 3 V, which is an approximately 19-fold higher than that of the pristine Sb2Se3 nanorod photodetector. Moreover, the density functional theory calculation has demonstrated that the Ni2+ doped into Sb2Se3 will preferentially occupy the Sb site and introduce a shallow energy level of acceptor, resulting in the enhancement of electrical conductivity, which is consistent with the experimental result. Therefore, the work proves the substitution of Sb site with a low-valence metal cation into Sb2Se3 is an effective strategy to improve the performance of the Sb2Se3-based photodetector.

研究领域: 材料科学 · 光电子学 · 半导体物理 · 纳米技术
✓ 已验证 DOI 高影响因子
查看原文 查看 PubMed
ADVANCED MATERIALS · 2020 ·Vol. 32 ·期 23 ·2001082 · IF 27.398

Graphdiyne-Based Flexible Photodetectors with High Responsivity and Detectivity

Ye Zhang,Pu Huang,Jia Guo,Rongchao Shi,Weichun Huang,Zhe Shi,Leiming Wu,Feng Zhang,Lingfeng Gao,Chao Li,Xiuwen Zhang,Jialiang Xu,Han Zhang

Graphdiyne (GDY), a newly emerging 2D carbon allotrope, has been widely explored in various fields owing to its outstanding electronic properties such as the intrinsic bandgap and high carrier mobility. Herein, GDY-based photoelectrochemical-type photodetection is realized by spin-coating ultrathin GDY nanosheets onto flexible poly(ethylene terephthalate) (PET) substrates. The GDY-based photodetectors (PDs) demonstrate excellent photo-responsive behaviors with high photocurrent ( P ph , 5.98 µA cm - 2 ), photoresponsivity ( R ph , 1086.96 µA W - 1 ), detectivity (7.31 × 10 10 Jones), and excellent long-term stability (more than 1 month). More importantly, the PDs maintain an excellent P ph after 1000 cycles of bending (4.45 µA cm - 2 ) and twisting (3.85 µA cm - 2 ), thanks to the great flexibility of the GDY structure that is compatible with the flexible PET substrate. Density functional theory (DFT) calculations are adopted to explore the electronic characteristics of GDY, which provides evidence for the performance enhancement of GDY in alkaline electrolyte. In this way, the GDY-based flexible PDs can enrich the fundamental study of GDY and pave the way for the exploration of GDY heterojunction-based photodetection.

CAS / MDL: 64-17-5 68-12-2 67-64-1
研究领域: 材料科学 · 电子工程 · 理论计算
✓ 已验证 产品关联 DOI PubMed 高影响因子
查看原文 查看 PubMed
RSC Advances · 2018 ·Vol. 8 ·期 68 ·39203-39207 · IF 2.936

Facile synthesis of AgBiS2 nanocrystals for high responsivity infrared detectors

Chun Hin Mak,Jiasheng Qian,Lukas Rogée,Wai Kin Lai,Shu Ping Lau

AgBiS2 nanocrystals are emerging optoelectronic materials due to their solution-processability, earth abundance and non-toxic properties. We report a facile method to prepare AgBiS2 nanocrystals in ambient conditions. The nanocrystals are of high crystallinity and without byproducts, which make them suitable for solution processable optoelectronic devices. They were incorporated into graphene transistors for their near infrared detection application. Photodetectors with a high photo-responsivity of 105 A W−1 for 895 nm wavelength at a low operation voltage of 0.1 V were demonstrated.

✓ 已验证 DOI 高影响因子
查看原文 查看 PubMed
Advanced Optical Materials · 2025 ·Vol. 13 ·期 29 ·e00804 · IF 7.2

Inkjet-Printed PbS QD-Graphene Infrared Photodetector with Enhanced Responsivity

Yixin Jiang,Tieying Ma,Xiaowei Gu,Tian Jia,Yuanze Hong,Yilong Huang,Xuechao Yu

Infrared photodetectors are crucial for detection, identification, and analysis, making them of paramount importance in both military and civilian applications. Graphene-based photodetectors integrated with colloidal quantum dots (CQDs) show great promise in the infrared spectrum, however, challenges remain in optimizing their performance and scalability. In this work, we present an innovative approach for fabricating high-performance infrared photodetector arrays by inkjet printing of colloidal lead sulfide (PbS) QDs onto graphene-based field-effect transistors (FETs) arrays. The incorporation of inorganic ligands Na 3 AsS 4 significantly enhances the photodetector's responsivity up to 1276 A W −1 , which is nine times the responsivity of traditional ligand-functionalized devices. Additionally, the response time of the inorganic ligand device is 19 ms, two orders of magnitude faster than that of the EDT-functionalized device, due to the short-chain inorganic ligands significantly enhancing the charge transfer efficiency of the device. Furthermore, the inkjet printing technology is employed to enable precise deposition, thereby promoting the scalable fabrication of compact and high-resolution photodetector arrays. These findings highlight the potential of inkjet-printed QD–graphene photodetector arrays in infrared imaging and sensing applications, paving the way for large-scale fabrication of high-performance optoelectronic devices.

CAS / MDL: 1313-84-4 1303-33-9
研究领域: 光电子学 · 纳米技术 · 红外成像 · 量子点器件 · 石墨烯电子学
✓ 已验证 产品关联 DOI 高影响因子
查看原文 查看 PubMed
CHEMISTRY OF MATERIALS · 2020 · IF 9.567

Self-Induced Strain in 2D Chalcogenide Nanocrystals with Enhanced Photoelectrochemical Responsivity

Xuelian Yu,Yuxuan Wu,Jiayi Cui,Yue Ran,Wei Lin,Li-Min Liu,Jinhua Ye,Yihe Zhang,Andreu Cabot

Strain engineering has become an emerging strategy to tailor the performance of nanocatalysts. However, current strained catalysts overwhelmingly rely on stresses originated at catalyst–support interfaces. Self-standing strained nanostructures are extremely challenging to produce, and thus their impact on catalytic and photocatalytic activities remains largely unknown. Herein, we propose a ligand-based colloidal strategy for the one-step growth of bended metal chalcogenide nanoplates with a built-up strain. This strategy is based on the seeded growth of strained nanostructures from sacrificial seeds which provide a proper lattice mismatch. We demonstrate this strategy for the synthesis of strained orthorhombic SnSe and SnS nanoplates from rock salt SnS seeds. We probe not only the presence of atomic distortions in the periodic lattice but also its coupling with the generation of a large density of selenium vacancies. Geometrical phase analysis evidences the formation of a strain field in self-bended SnSe nanoplates, with a maximum tensile strain up to 12%. Theoretical and experimental results further reveal that the strain-related selenium vacancies strongly affect the electronic structure of SnSe and facilitate the mobility of photogenerated charge carriers, which result in a significantly improved photoelectrochemical activity. The strategy presented here opens a new avenue for precisely tuning semiconductor functionalities via strain engineering.

研究领域: 材料科学 · 化学工程 · 纳米技术
✓ 已验证 DOI 高影响因子
查看原文 查看 PubMed
TALANTA · 2017 · IF 4.162

Vanadium-doped tin oxide porous nanofibers: Enhanced responsivity for hydrogen detection

Xiuru Xu,Min Yin,Na Li,Wei Wang,Bolun Sun,Ming Liu,Dongwei Zhang,Zhenyu Li,Ce Wang

Vanadium (V)-doped tin oxide (SnO 2 ) one-dimensional porous nanofibers (PNFs) were fabricated for the hydrogen detection application. V-doping changes the distances of different facets of the SnO 2 crystal in different roles, and therefore deform or distort the SnO 2 structure. The modulation effects of V 4+ and V 5+ on hydrogen detecting performance were discussed. With a suitable amount of V-doping, the porous SnO 2 nanofibers exhibits ~66% increase of response sensitivity, 33% faster in response (2   s) and 50% faster in recovery time (1   s), comparing with undoped SnO 2 nanofibers.

研究领域: 材料科学 · 化学
✓ 已验证 DOI PubMed 高影响因子
查看原文 查看 PubMed
CRYSTAL GROWTH & DESIGN · 2026 · IF 3.6

Highly Responsivity of UV Photodetector Based on ZnO/PEDOT:PSS/CsCu2I3 Heterojunction

Yanyan Peng,Haoran Tu,Hepeng Zhao,Mingyang Li,Man Zhao

Perovskite materials have been widely developed for use in photodetectors due to their unique advantages, but most perovskites contain environmentally harmful lead. Herein, spin-coating is employed to fabricate nontoxic Cu-based perovskite films. By constructing a CsCu2I3 and ZnO heterojunction and incorporating a PEDOT:PSS hole transport layer, the ZnO/PEDOT:PSS/CsCu2I3 UV photodetector demonstrates a significantly enhanced spectral range and improved optoelectronic performance compared to a CsCu2I3 photodetector. Specifically, the photocurrent of ZnO/PEDOT:PSS/CsCu2I3 is enhanced by 3 orders of magnitude, reaching 1.43 × 10–4 A, and the responsivity is improved 57-fold to 0.67 A/W. This achievement provides an effective route for fabricating highly responsive Cu-based perovskite photodetectors.

✓ 已验证 DOI 高影响因子
查看原文 查看 PubMed
OPTICS COMMUNICATIONS · 2017 · IF 1.588

Investigating the photocurrent generation and optoelectronic responsivity of WS2-TiO2 heterostructure

Xiaohui Ren,Hui Qiao,Zongyu Huang,Pinghua Tang,Shuhua Liu,Siwei Luo,Hao Yao,Xiang Qi,Jianxin Zhong

Hybridization of WS 2 and TiO 2 by a facile hydrothermal method was realized to construct WS 2 - TiO 2 heterostructure photodetector which exhibits preferable photoresponse activity in association with structural robustness. The relationship between photocurrent density and applied bias potential has also been uncovered. Photoresponse measurements demonstrate the photocurrent density of WS 2 - TiO 2 hybrid nanosheets (HNs) has been greatly improved when compared to that of as-prepared TiO 2 , while the steady current density can achieve 130 nA ∕ cm 2 when applied potential is 1.0 V. Besides that, the stability test exhibits no detectable distinction after processing 15 cycles. The improved photoresponse activities can be attributed into the positive synergetic effect between the WS 2 and TiO 2 . We hope the present work can provide fundamental implementations about WS 2 - TiO 2 heterostructure photodetector, meanwhile, offering it potential availabilities for constructing high-performance photodetectors.

研究领域: 材料科学 · 光电化学
✓ 已验证 产品关联 DOI 高影响因子
查看原文 查看 PubMed
Advanced Optical Materials · 2024 ·Vol. 12 ·期 22 ·2400664 · IF 8

2D Growth of BiSCl as Anisotropic Photodetector with Ultrahigh Responsivity and Detectivity

Ziheng Lin,Xuanhao Yuan,Ruize Wang,Yan Li,Lei Shi,Weili Cui,Lishan Liang,Zihao Huang,Fei Tian,Yong Sun,Chengxin Wang

BiSCl, which shares the anisotropic chain-like lattice configuration with the Bi V X VI Y VII (XS, Se; YCl, Br, I) family displays high photoelectric conversion efficiency in the UV–vis wavelength region. The current difficulty in 2D growth restricts the investigation of device performance and further integration. Herein, an epitaxial growth strategy for 2D BiSCl is proposed based on the principle of sharing a chloridion layer at the BiSCl/BiOCl interface. The interfacial atomic arrangement is carefully revealed using atomic resolved AC-TEM(Spherical Aberration High Transmission Electron Microscope) and demonstrated by calculations based on density functional theory. Benefiting from its compatibility with PS-assisted large-scale transfer technology, the photoelectric performance is evaluated by constructing a standard symmetrical photoconductor and Graphene-BiSCl Schottky junction device. High responsivity (1.71 × 10 4 A W −1 ) and detectivity (5.9 × 10 16. Jones) are achieved at 405 nm, and robustness is shown in a broadband spectrum, which manifested prominent anisotropic photoelectric behavior and great potential in weak-light detection. These results elucidate the photoelectric applications of BiSCl semiconductors and the structural design of the Bi V X VI Y VII family.

研究领域: 材料科学 · 纳米技术 · 光电子学 · 半导体物理 · 薄膜生长
✓ 已验证 DOI 高影响因子
查看原文 查看 PubMed
已复制

文献关联基于可获得的产品、CAS、DOI 及引用记录。收录不代表作者或出版方对阿拉丁产品的背书,请以原始文献为准。