计算溶液所需的质量、体积或浓度。
为什么选择此级别
，适用于对基线干扰要求严格的色谱和分析工作流程。
储存与运输
室温。 。请查阅批次 COA 获取详细规格。
质量文档
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文献证明
在色谱分析、有机合成和交叉偶联反应领域已被 0 篇同行评审文献引用。
概述
Description
ALUMINUM ETCHANT - TYPE DStandard aluminum etchant for use on gallium arsenide, arsenide and gallium phosphide devices and for aluminum metallizations on nichrome resistorsAluminum etchants are stable, non-toxic preparations used to etch aluminum metallizations on silicon devices and in integrated circuit applications. Aluminum contacts are defined, and interconnections are formed. These Aluminum Etchants, formulated with unique properties, easily overcome many of the difficulties experienced in aluminum etch processes.The aluminum metallization and etching process using photo-lithographic techniques is basic to semiconductor and microelectronic technology. Aluminum etchants are highly compatible with commercial photoresists and permit delineation into high resolution patterns. Metal line width of 1 mil and separations less than 5 microns are feasible. High resolution is practical with these aluminum etchants because lifting of photoresist patterns does not occur and undercutting is minimized. Furthermore, the etchants do not attack silicon, silicon dioxide, silicon nitride or nichrome resistor films.Two aluminum etchants are offered for use in microelectronics. Type A is recommended for use on silicon devices. Type D is recommended for use on gallium arsenide and gallium phosphide devices to avoid attack of the etchant on the intermetallic compound. It is also recommended for etching aluminum metallizations on nichrome thin film resistors.Aluminum metallizations up to 25,000 Å are vacuum deposited on the silicon slice, coated with a photoresist, and UV exposed using an appropriate photographic mask. The resist is developed to protect the aluminum where interconnections are desired. Then the unprotected areas of the aluminum are removed by etching with the aluminum etchant, followed by a water rinse.Etching time is dependent upon the etchant temperature and the aluminum film thickness. When etching thick aluminum films, a higher etch rate is required; thus a higher etchant temperature should be used. Likewise, for thinner aluminum films, slower etch rates are desired and a lower etchant temperature should be chosen.At a specific etchant temperature, the etching time is given by the following formula:Etching time (second) + Film Thickness (Å)/ Etch Rate (Å/sec)where Etch Rate at 25°C 30 Å/sec; at 40°C 80 Å/sec.
Description
ALUMINUM ETCHANT - TYPE DStandard aluminum etchant for use on gallium arsenide, arsenide and gallium phosphide devices and for aluminum metallizations on nichrome resistorsAluminum etchants are stable, non-toxic preparations used to etch aluminum metallizations on silicon devices and in integrated circuit applications. Aluminum contacts are defined, and interconnections are formed. These Aluminum Etchants, formulated with unique properties, easily overcome many of the difficulties experienced in aluminum etch processes.The aluminum metallization and etching process using photo-lithographic techniques is basic to semiconductor and microelectronic technology. Aluminum etchants are highly compatible with commercial photoresists and permit delineation into high resolution patterns. Metal line width of 1 mil and separations less than 5 microns are feasible. High resolution is practical with these aluminum etchants because lifting of photoresist patterns does not occur and undercutting is minimized. Furthermore, the etchants do not attack silicon, silicon dioxide, silicon nitride or nichrome resistor films.Two aluminum etchants are offered for use in microelectronics. Type A is recommended for use on silicon devices. Type D is recommended for use on gallium arsenide and gallium phosphide devices to avoid attack of the etchant on the intermetallic compound. It is also recommended for etching aluminum metallizations on nichrome thin film resistors.Aluminum metallizations up to 25,000 Å are vacuum deposited on the silicon slice, coated with a photoresist, and UV exposed using an appropriate photographic mask. The resist is developed to protect the aluminum where interconnections are desired. Then the unprotected areas of the aluminum are removed by etching with the aluminum etchant, followed by a water rinse.Etching time is dependent upon the etchant temperature and the aluminum film thickness. When etching thick aluminum films, a higher etch rate is required; thus a higher etchant temperature should be used. Likewise, for thinner aluminum films, slower etch rates are desired and a lower etchant temperature should be chosen.At a specific etchant temperature, the etching time is given by the following formula:Etching time (second) + Film Thickness (Å)/ Etch Rate (Å/sec)where Etch Rate at 25°C 30 Å/sec; at 40°C 80 Å/sec.
规格
英文别名
Aluminum etching solution for use on gallium arsenide and gallium phosphide devices
英文名称
Aluminum Etchant Type D
储存条件
室温
名称和识别符
分子类型
小分子
技术文档
高级数据
安全和危险性（GHS）
信号词
危险
危险声明
H226: 易燃液体和蒸气
H290: 可能腐蚀金属
H302: 吞食有害
H314: 造成严重的皮肤灼伤和眼睛损伤
H317: 可能引起皮肤过敏反应
预防措施声明
P210: 远离热源，热表面，火花，明火和其他点火源。 - 禁止抽烟。
P233: 保持容器密闭。
P280: 戴防护手套/穿防护服/戴防护眼罩/戴防护面具。
P301+P312: 如误吞咽：如感觉不适，呼叫急救中心/医生。
P303+P361+P353: 如皮肤（或头发）沾染：立即脱掉所有沾染的衣服。用水清洗皮肤/淋浴。
P305+P351+P338: 如进入眼睛：用水小心冲洗几分钟。如戴隐形眼镜并可方便地取出，取出隐形眼镜。继续冲洗。
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溶液计算器
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