计算溶液所需的质量、体积或浓度。
概述
Description
Atomic number of base material: 40 ZirconiumAdvanced precursor for atomic layer deposition of ZrO2thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2and ZrO2films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.Precursors Packaged for Depositions Systems
Description
Atomic number of base material: 40 ZirconiumAdvanced precursor for atomic layer deposition of ZrO2thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2and ZrO2films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.Precursors Packaged for Depositions Systems
规格
英文别名
ZrD-CO₄, ZRCMMM
规格或纯度
包装用于沉积系统
英文名称
Bis(methyl-η⁵−cyclopentadienyl)methoxymethylzirconium
储存条件
室温
名称和识别符
分子类型
小分子
高级数据
化学和物理性质
密度
1.27g/mL±0.01g/mL at 25°C (lit.)
安全和危险性（GHS）
信号词
警告
危险声明
H302: 吞食有害
H315: 引起皮肤刺激
H319: 引起严重眼睛刺激
预防措施声明
P305+P351+P338: 如进入眼睛：用水小心冲洗几分钟。如戴隐形眼镜并可方便地取出，取出隐形眼镜。继续冲洗。
质检证书(CoA,COO,BSE/TSE 和分析图谱)
C of A & Other Certificates(BSE/TSE, COO):
输入批号以搜索分析图谱:
技术文档和文章
溶液计算器
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危险品化学品经营许可证（带存储）