计算溶液所需的质量、体积或浓度。
为什么选择此级别
，适用于对基线干扰要求严格的色谱和分析工作流程。
储存与运输
室温。常规运输 。请查阅批次 COA 获取详细规格。
质量文档
SDS、COA、产品数据表及规格说明书均可下载。可通过批号查询获取批次 COA。
文献证明
在色谱分析、有机合成和交叉偶联反应领域已被 0 篇同行评审文献引用。
概述
Description
Improved HF Buffer System with stabilized HF activity - selective solvent for SiO2used in semiconductor technology of planar passivated devices - transistors, integrated circuits, diodes, rectifiers, SCR, MOS, FETAdvantages:Ready-to-use - EconomicalHF activity buffer stabilizedExcellent process reproducibilityDoes not undercut masked oxideWill not stain diffused silicon surfacesAvoids contamination on silicon surfacesPhotoresist coating unaffectedBuffer HF improved is an idealized buffer preparation characterized by a high buffer index and an optimized, uniform oxide-etch rate. The composition of buffer HF improved is precisely controlled by HF activity measurements and electrometric pH. The mass balance corresponds essentially to (HF) + (F) + 2(HF2) for a two-ligand mononuclear complex and the charge balance is (H+) - (F) + (HF2-). The HF activity is maintained constant through the specific equilibrium constant which regulates the equilibrium reaction between fluoride, bifluoride, and HF buffer components. A second equilibrium constant participates in the regulation of the hydronium in concentration of pH.Buffer HF improved is produced and analyzed to be essentially free of impurities. Nitrate ions, a common impurity causing stains on diffused silicon surfaces, are specifically removed. Heavy metal impurities, which can lead to degradation of device characteristics, are rigidly controlled under manufacturing process specifications.Use of Buffer HF improved:Buffer HF improved dissolves silica films (both thermally grown and silane SiO2) produced on the surfaces of silicon and exposed by photolithography. It also is capable of dissolving doped silica films such as phosphosilica and borosilica glasses as formed in semiconductor processing.The overall chemical reaction is: 4HF + SiO2SiF4+ 2H2OFor trouble-free operation Buffer HF improved is recommended in the new technologies for manufacture of semiconductor planar and mesa devices. It is compatible with both negative and positive photoresists. Excellent results with good reproducibility are simple to achieve without undercutting marked oxides, surface staining or device degradation by metallic impurities.
Preparation instructions
Instructions:Most practical oxide passivation layers range from 2000 Å to 5000 Å in thickness, and good results are obtained by exposure in Buffer HF improved for 2 to 5 minutes at room temperature. Exposure time may be decreased or increased if necessary. Buffer HF improved should be rinsed off with deionized water. The high buffer index of Buffer HF improved permits repeated use of the buffer at fixed exposure time. For faster etch rate (approx. 2X) use Buffer HF improved at 35 °C.
规格
英文别名
BHF
规格或纯度
表面活性剂
英文名称
Buffer HF improved
储存条件
室温
运输条件
常规运输
名称和识别符
分子类型
小分子
技术文档
高级数据
安全和危险性（GHS）
信号词
危险
危险声明
H314: 造成严重的皮肤灼伤和眼睛损伤
H300+H310+H330: 吞咽，皮肤接触或吸入会致命。
预防措施声明
P280: 戴防护手套/穿防护服/戴防护眼罩/戴防护面具。
P303+P361+P353: 如皮肤（或头发）沾染：立即脱掉所有沾染的衣服。用水清洗皮肤/淋浴。
P301+P310+P330: 如果吞咽：漱口。立即致电中毒中心/医生。
质检证书（CoA,COO,BSE/TSE 和分析图谱)
C of A & Other Certificates(BSE/TSE, COO):
输入批号以搜索分析图谱:
溶液计算器
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危险品化学品经营许可证（带存储）