Colossal permittivity, low dielectric loss, and good thermal stability achieved in Ta-doped BaTiO3 by B-site defect engineering

High-performance colossal permittivity ( ε′  > 10 4 ) plays an indispensable role in the development of electronic field. In this work, ultra-high dielectric permittivity ( ε′  > 237, 294 @1 kHz) and low dielectric loss (0.012 @1 kHz) were simultaneously achieved in Ta-doped BaTi 0.995 Ta 0.005 O 3 ceramics. Importantly, the dielectric permittivity changes less than 15% between − 55 and 200 °C, and the dielectric loss is less than 0.04. The excellent giant dielectric performance is related to the defect dipoles of electronic pins associated with electrons/oxygen vacancies/Ti 3+ , which are generated by B-site donor. And the thermal-activated short-range hopping of electrons is conformed to be the origin of low dielectric losses and excellent thermal stability. This work provides a strategy for achieving ultra-high dielectric permittivity, low dielectric loss, and excellent temperature stability of Ta-doped BaTiO 3 simultaneously through B-site defect engineering.