Fabrication of MoS2 with Dual Defects of O-Doping and S-Vacancies for High-Efficiency Hydrogen Production

Developing excellent electrocatalysts is a significant step in accelerating the widespread implementation of the electrochemical hydrogen evolution reaction (HER). MoS 2 is one of the promising alternatives to platinum-based catalysts, while its HER activity is far from Pt due to the lack of active sites. It is urgent to develop a novel strategy to activate the basal planes of MoS 2 for enhancing the HER activity. Herein, a facile hydrothermal method with a low-temperature H 2 O 2 etching method is developed to fabricate MoS 2 with O-doped and S-vacancy dual defects. The dual defects MoS 2 nanosheet demonstrates remarkable hydrogen evolution reaction (HER) activity, achieving 10 mA cm −2 with a small overpotential of around 143 mV in 0.5 M H 2 SO 4 . Graphical Abstract Construct dual-defect MoS2 via a facile hydrothermal method and mild H2O2 etching process.