摘要
Inorganic cesium lead triiodide perovskite has shown great potential in photovoltaic applications. Currently, the preparation of high-quality β- or γ-phase CsPbI 3 films largely relies on the DMAPbI 3 (dimethylammonium [DMA]) or “HPbI 3 ”-assisted crystallization method, which unfortunately causes DMAPbI 3 residue and deteriorates photovoltaic performance and stability. Herein, a universal hydrogen-bonding-facilitated DMA extraction method is developed to fabricate high-quality γ-CsPbI 3 films. Theoretical and experimental evidence manifests that the hydrogen bonds formed between polyacrylic acid (PAA) and DMAPbI 3 decrease the DMA escape energy barrier, and this not only brings ahead the decomposition process of DMAPbI 3 but also accelerates the crystallization kinetics of CsPbI 3 , resulting in pinhole-free CsPbI 3 films without any trace of DMAPbI 3 residue and an extended fabrication humidity (up to 80% relative humidity [RH]) and temperature window. Thanks to the environmentally benign crystallization, the CsPbI 3 solar cells with dopant-free poly(3-hexylthiophene) (P3HT) yield a high efficiency of 20.25% and superior moisture and operational stability.
危险品化学品经营许可证(带存储)