Multifunctional tantalum disilicide ceramics sintered at high temperature and high pressure

Silicide ceramics are attracted significant attention due to their exceptional physical properties. However, their inherent brittleness at room temperature limits their practical applications. Here, we aim to improve the mechanical properties of tantalum disilicide (TaSi 2 ) ceramics by modifying the preparation methods and sintering conditions. We fabricate the dense TaSi 2 ceramics using high-pressure and high-temperature (HPHT) sintering technology at 5.5 GPa and 800–1300°C. We characterize the microstructures, mechanical, and electronic properties of bulk TaSi 2 ceramics at HPHT conditions. Our results indicate an enhancement in the fracture toughness of 11.97 MPa m 1/2 for TaSi 2 ceramics. More importantly, the electrical conductivity (47.13 × 10 5 S/m) of TaSi 2 ceramic is increased and verified by theoretical calculations. These findings provide crucial insights for future applications of TaSi 2 and offer valuable avenues for the design and synthesis of advanced ceramic materials.