Temperature Dependence of Structure, Dielectric and Energy Storage Properties in Bi3.15Nd0.85Ti3O12 Thin Films

In this work, 80-nm Bi3.15Nd0.85Ti3O12 thin films with different annealing temperature have been successfully fabricated on p-type silicon substrates by sol-gel method. The effect of annealing temperature on the microstructure, dielectric properties, and energy-storage performances of the thin films were investigated in detail. The prepared films at 750 °C had a layered perovskite structure with an excellent crystalline morphology, featuring a high dielectric constant of 43.8 and a low dielectric loss < 2% at 1 kHz, which lead the significantly improvement of breakdown strength to increase the energy storage properties. The maximum recoverable energy density of 4.3 J/cm3 with an efficiency of 70.7% under the electric field of 1.90 MV/cm has been obtained for the Bi3.15Nd0.85Ti3O12 film capacitors at 750 °C. These properties indicate that Bi3.15Nd0.85Ti3O12 system is a promising environmentally friendly lead-free ferroelectric.