Pt-loaded Bi2WO6 microdiscs for highly sensitive and selective triethylamine monitoring

Pt-loaded curling-like Bi 2 WO 6 (BWO) microdiscs were fabricated via a simple one-step hydrothermal and impregnation route. Various characterization methods, such as XRD, EDS and TEM, were conducted to prove the successful Pt loading. Electron migration from the semiconductor BWO to the precious metal Pt was revealed by the blue shift of the Bi 4f and W 4f XPS peaks with the increase of the Pt loading amount and the ∼10-fold baseline resistance elevation of the BWO-based sensor by the Pt loading, proving the formation of Schottky junction. Among the pristine BWO and Pt-loaded BWO with different Pt loading amounts, 1 wt % Pt-loaded BWO exhibits the highest gas response of 209 in sensing 500 ppm triethylamine at 300 °C, a minimal selectivity coefficient of 130.6 against some typical interfering gases at the same concentration and a low detection threshold of 1 ppm. Additionally, the sensitization mechanism is discussed as the synergistic effect of noble metal catalytic effect and metal-semiconductor junctions.