摘要
Ag sintering technology for die-attach application in power semiconductors has garnered significant attention in recent years due to its excellent high-temperature service reliability. In this study, a highly reliable bonding joint was achieved using a specific Ag paste, resulting in shear strength of 37.63 MPa after pressureless bonding at 250°C for 10 min. However, a significant reduction in bonding strength was observed when using another set of Ag paste with better sintering performance. To investigate this anomalous phenomenon, we have performed a series of characterizations and proposed a corresponding bonding formation mechanism. The conclusions and inferences drawn from this study offer valuable theoretical support for the further application of Ag sintering, thereby promoting the advancement of this technology. Graphical Abstract
危险品化学品经营许可证(带存储)