Organic-2D composite material-based RRAM with high reliability for mimicking synaptic behavior

The field of artificial intelligence and neural computing has been rapidly expanding due to the implementation of resistive random-access memory (RRAM) based artificial synaptic. However, the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately. To overcome such limitation, organic-2D composites with high mechanical properties are proposed as the active layer of RRAM. Moreover, we enhance the reliability of the device by ZrO 2 insertion layer, resulting in stable synaptic performance. The Ag/PVA:h-BN/ZrO 2 /ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5 × 10 2 , a ∼2 400 cycles endurance and a long retention time (>6 × 10 3 s), which are essential for the development of high-performance RRAMs. We also study the possible synaptic mechanism and dynamic plasticity of the memory device, observing the transition from short-term potentiation (STP) to long-term potentiation (LTP) under the effect of continuous voltage pulses. Moreover, the device exhibits both long-term depression (LTD) and paired-pulse facilitation (PPF) properties, which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses, representing promising avenues for the development of advanced neuromorphic computing systems.